Boosting the Performance of CsPbBr3-based Perovskite Light-Emitting Diodes Via Constructing Nanocomposite Emissive Layers

Guangrong Jin,Dengliang Zhang,Peiyuan Pang,Ziqing Ye,Tanghao Liu,Guichuang Xing,Jiangshan Chen,Dongge Ma

DOI: https://doi.org/10.1039/d0tc05227b

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:The construction of quasi-2D CsPbBr3/Cs4PbBr6 nanocomposites enables significantly enhanced performance of CsPbBr3-based PeLEDs.

What problem does this paper attempt to address?

Green Light-Emitting Diodes Based on Hybrid Perovskite Films with Mixed Cesium and Methylammonium Cations

Junjie Si,Yang Liu,Nana Wang,Meng Xu,Jing Li,Haiping He,Jianpu Wang,Yizheng Jin

DOI: https://doi.org/10.1007/s12274-017-1432-7

IF: 9.9

2017-01-01

Nano Research

Abstract:We report the formation of high-quality Cs0.4MA0.6PbBr3 thin films with nearly full surface coverage and good emission properties upon the introduction of Cs+ into perovskite crystals. The Cs0.4MA0.6PbBr3 thin films were applied as emissive layers in light-emitting diodes. A maximum external quantum efficiency of ~2.0% was achieved for these green-emitting devices.
Ions-induced Assembly of Perovskite Nanocomposites for Highly Efficient Light-Emitting Diodes with EQE Exceeding 30

Zhaohui Xing,Guangrong Jin,Qing Du,Peiyuan Pang,Tanghao Liu,Yang Shen,Dengliang Zhang,Bufan Yu,Yue Liang,Dezhi Yang,Jianxin Tang,Lei Wang,Guichuang Xing,Jiangshan Chen,Dongge Ma

DOI: https://doi.org/10.1002/adma.202406706

2024-09-23

Abstract:Metal halide perovskites, a cost-effective class of semiconductos, hold great promise for display technologies that demand high-efficiency, color-pure light-emitting diodes (LEDs). Early research on three-dimensional (3D) perovskites showed low radiative efficiencies due to modest exciton binding energies. To inprove luminescence, reducing dimensionality or grain size has been a common approach. However, dividing the perovskite lattice into smaller units may hinder carrier transport, compromising electrical performance. Moreover, the increased surface area introduce additional surface trap states, leading to greater non-radiative recombination. Here, an ions-induced growth method is employed to assembe lattice-anchored perovskite nanocomposites for efficient LEDs with high color purity. This approach enables the nanocomposite thin films, composed of 3D CsPbBr3 and its variant of zero-dimensional (0D) Cs4PbBr6, to feature significant low trap-assisted nonradiative recombination, enhanced light out-coupling with a corrugated surface, and well-balanced charge carrier transport. Based on the resultant 3D/0D perovskite nanocomposites, the perovskite LEDs (PeLEDs) achieving an remarkable external quantum efficiency of 31.0% at the emission peak of 521 nm with a narrow full width at half-maximum of only 18 nm. This sets a new benchmark for color purity in high performance PeLED research, highlighting the significant advantage of this approach.
Efficient Radiative Enhancement in Perovskite Light‐Emitting Devices Through Involving a Novel Sandwich Localized Surface Plasmon Structure

He Shao,Xiufeng Wu,Donglei Zhou,Wenda Chen,Lifang Li,Wen Xu,Lin Xu,Biao Dong,Xue Bai,Hongwei Song

DOI: https://doi.org/10.1002/smtd.202200163

IF: 12.4

2022-01-01

Small Methods

Abstract:In recent years, CsPbX3 (X = Cl, Br, I) perovskite quantum dots (QDs) have been considered as the most promising materials for light-emitting diodes (LEDs). However, the advances of CsPbX3 quantum dot-based light emitting diodes (QLEDs) still lagged behind inorganic III-V LEDs and other organic LEDs. Herein, a strategy to improve the performances of perovskite QLEDs is reported by utilizing the localized surface plasmon resonance (LSPR) effects of Au nanospheres (NSs). It is accomplished by introducing a Au NS layer into the electron transport layer of Ca2+-CsPbBr3 QLEDs, where the diameter and spacing of Au NSs and the interaction distance between the Ca2+-CsPbBr3 QD and Au NS layers are modulated, according to the theoretical simulation of Finite-difference time-domain. As a result, the photoluminescence quantum yield of Ca2+-CsPbBr3 QD layer is improved from 31.5% to 73.3%. Finally, the luminance of Ca2+-CsPbBr3 QLEDs is improved from 16824 to 63931 cd m(-2) and external quantum efficiency (EQE) is improved from 4.2% to 10.5%. The radiative transition rate can be remarkably modulated from 0.7 x 10(7) to 6.6 x 10(7) s(-1). The enhancement in luminance and EQE are the best values in the LSPR modified perovskite QLEDs and the strategy offered in this work fits with other LEDs and optoelectrical devices.
Enhanced performance of perovskite light-emitting-diodes based on ionic liquid modified CsPbBr3 nanocrystals

Yanqiao Xu,Ting Chen,Zhixiang Xie,Weihui Jiang,Lianjun Wang,Wan Jiang,Xiaojun Zhang

DOI: https://doi.org/10.1016/j.optmat.2020.110620

IF: 3.754

2021-01-01

Optical Materials

Abstract:Perovskite nanocrystals (NCs) are promising materials for light-emitting diodes (LEDs) owing to their unique optoelectrical properties. However, the organic long-chain ligands act as insulating layers on NC surface, causing the low carrier transport capability and poor performance of LEDs. Herein, a novel strategy was proposed to facilitate the carrier transport for enhancing the performance of perovskite light emitting diodes (PeLEDs). Ionic liquid (IL) 1-ethyl-3-methylimidazolium bromide [Emim]Br was introduced into the synthesis process of CsPbBr3 NCs, which could improve the emission intensity of NCs significantly. Furthermore, [Emim]Br also possessed the characteristic that facilitated the transportation of carriers, resulting in the enhancement of external quantum efficiency (EQE) of PeLEDs from 0.38% to 1.03%. These results demonstrate that the novel strategy opens up new avenue for boosting the PeLED performance, which will promote the commercial applications in future high-definition displays.

materials science, multidisciplinary,optics
Enhanced Performance of Inverted CsPbBr3 Nanocrystal LEDs Via Zn (II) Doping

Xiaowen Zhou,Yu Zhao,Wenzhe Huang,Yuanyuan Wu,Zhongen Wu,Gufeng He

DOI: https://doi.org/10.1016/j.orgel.2021.106253

IF: 3.868

2021-01-01

Organic Electronics

Abstract:Perovskite lighting-emitting diodes (PeLEDs) with inverted structure have been considered as promising display technology due to their suitable driving schemes with n-type thin-film transistors. However, the defects and imbalanced charge carriers in the CsPbBr3 nanocrystal (NC) PeLED are key hurdles, limiting the performance. Herein, we have successfully doped Zn2+ ions into CsPbBr3 NCs by ligand-assisted reprecipitation method, exhibiting an 85% enhancement of the photoluminescence quantum yield (PLQY). In addition, the optimized energy level alignment via Zn doping facilitates the carrier balance in the devices, improving the efficiencies. The obtained CsPbBr3:Zn-based PeLED reaches a high luminance of 3124 cd/m(2) and a maximum external quantum efficiency (EQE) of 0.85%, which are superior to those of CsPbBr3-based PeLED (luminance = 564 cd/m(2), EQE = 0.09%). The results demonstrate that Zn doping significantly enhances the performance of PeLED, which increases the potential of these inverted PeLEDs connected with n-type TFTs towards practical applications.
Efficient CsPbBr 3 Perovskite Light-Emitting Diodes via Novel Multi-Step Ligand Exchange Strategy Based on Zwitterionic Molecules

Zhiwei Zeng,Yuhan Meng,Zunxian Yang,Yuliang Ye,Qiuxiang Lin,Zongyi Meng,Hongyi Hong,Songwei Ye,Zhiming Cheng,Qianting Lan,Jiaxiang Wang,Ye Chen,Hui Zhang,Yuting Bai,Xudong Jiang,Benfang Liu,Jiajie Hong,Tailiang Guo,Fushan Li,Yongyi Chen,Zhenzhen Weng

DOI: https://doi.org/10.1021/acsami.3c17324

IF: 9.5

2024-02-18

ACS Applied Materials & Interfaces

Abstract:Perovskite nanocrystals have absorbed increasing interest, especially in the field of optoelectronics, owing to their unique characteristics, including their tunable luminescence range, robust solution processability, facile synthesis, and so on. However, in practice, due to the inherent instability of the traditional long-chain insulating ligands surrounding perovskite quantum dots (PeQDs), the performance of the as-fabricated QLED is relatively disappointing. Herein, the zwitterion...

materials science, multidisciplinary,nanoscience & nanotechnology
High-performance and Stable CsPbBr3 Light-Emitting Diodes Based on Polymer Additive Treatment.

Wanqing Cai,Ziming Chen,Dongcheng Chen,Shijian Su,Qinghua Xu,Hin-Lap Yip,Yong Cao

DOI: https://doi.org/10.1039/c9ra05270d

IF: 4.036

2019-01-01

RSC Advances

Abstract:The 2-methyl-2-oxazoline additive induced the formation of high-quality CsPbBr3 nanocrystals and a stable PeLED with a half-lifetime of 2.4 hours at high initial luminance of 1000 cd m−2 was demonstrated, representing one of the most stable PeLEDs.
Morphology and Luminescence Regulation for CsPbBr3 Perovskite Light-Emitting Diodes by Controlling Growth of Low-Dimensional Phases.

Zhiqiang Bao,Xiaoyang Guo,Kai Sun,Jianfeng Ou,Ying Lv,Deyue Zou,Yantao Li,Li Song,Xingyuan Liu

DOI: https://doi.org/10.1021/acsami.2c17370

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:At present, the high defect density and strong nonradiative recombination rate of all-inorganic cesium lead bromide (CsPbBr3) perovskite light-emitting diodes (PeLEDs) seriously inhibit the improvement of their quantum efficiency. In this paper, the addition of a short-chain additive, diethylammonium bromide (DEABr), aims to control the generation of a quasi-2D large n-phase to optimize the surface morphology and construct two-dimensional/three-dimensional (2D/3D) heterojunction perovskite structures to enhance the EL efficiency of PeLEDs. Through Kelvin probe force microscopy (KPFM) characterization, we confirmed that the 2D phase grains with a low potential are locally formed on the surface of the perovskite film under the action of DEABr. The existence of the 2D phase effectively improved the surface morphology and suppressed surface defects. In addition, the in situ constructed 2D/3D heterojunction perovskite structure further increases the exciton radiative recombination rate and significantly improves the electroluminescent performance. By optimizing its doping concentration, the optimal all-inorganic PeLED displays a current efficiency (CE) of 30.3 cd A-1, an external quantum efficiency (EQE) of 9.6%, and a maximum brightness of 32,500 cd m-2. According to our results, the formation of 2D structures on the surface of the CsPbBr3 film can improve surface morphology issues and optoelectronic properties of the film.
Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr 3 Quantum Dot-Based Inverted Light-Emitting Diodes.

Alagesan Subramanian,Zhenghui Pan,Zhenbo Zhang,Imtiaz Ahmad,Jing Chen,Meinan Liu,Shuang Cheng,Yijun Xu,Jun Wu,Wei Lei,Qasim Khan,Yuegang Zhang

DOI: https://doi.org/10.1021/acsami.8b01684

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:All-inorganic perovskite light emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve a high performance of the device. Basically, device design, control of energy level alignment and reducing energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr3-based PeLED with an inverted architecture using lithium doped TiO2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to a superior device performance. The device exhibits a current efficiency of 3 cd A-1, a luminance efficiency 2210 cd m-2 and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest value among reported CsPbBr3-based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium doped-TiO2 compare to undoped TiO2-based device.
CsPbBr3 Nanocrystal Light-Emitting Diodes with Efficiency Up to 13.4% Achieved by Careful Surface Engineering and Device Engineering

Weilin Zheng,Qun Wan,Mingming Liu,Qinggang Zhang,Congyang Zhang,Ruixin Yan,Xiuping Feng,Long Kong,Liang Li

DOI: https://doi.org/10.1021/acs.jpcc.0c11085

2021-01-01

Abstract:Perovskite nanocrystals (NCs) have gained great interest for next-generation light-emitting diodes (LEDs) prized for their spectrally tunable, narrow luminescence and their defect-tolerant electronic structure. Here, we provide a careful surface engineering to balance the passivation and charge injection by controlling the ligand density of didodecyl dimethyl ammonium bromide on NCs, which not only offers an improved photoluminescence quantum yield of >70% for NCs but also guarantees the effective charge injection and transportation of CsPbBr3 NC films for fabricating LEDs. Additionally, the optimization of the hole transport layer was implemented to offer more balanced charge transportation, which further improved the performance of CsPbBr3 NC-based LEDs with a peak external quantum efficiency of 13.4%.
Enhanced Exciton‐to‐Mn2+ Energy Transfer in 3D/0D Cesium–Lead–Chloride Composite Perovskites

Chu‐Yao Zhong,Ladi Li,Qing Chen,Kai‐Zhe Jiang,Fa‐tang Li,Zhao‐Qing Liu,Yibo Chen

DOI: https://doi.org/10.1002/adom.202202321

IF: 9

2022-12-11

Advanced Optical Materials

Abstract:Mn2+‐doped 3D/0D Cs–Pb–Cl composite perovskites, in which the growth of 3D CsPbCl3 nanocrystals (NCs) is optimized by co‐generation of 0D Cs4PbCl6 NCs, exhibit a single emission band of Mn2+ with 1.4 and 3 times enhanced energy transfer and photoluminescence quantum efficiency compared to the single‐phase CsPbCl3:Mn2+ NCs. Doping cesium lead halide perovskite nanocrystals (NCs) with Mn2+ brings attractive long‐wavelength emission and flexible color tunability. However, due to multiple competing factors, the exciton‐to‐Mn2+ energy transfer efficiency is low. In this work, a simple structure‐optimization strategy is applied to enhance the exciton‐to‐Mn2+ energy transfer by synthesizing Mn2+ activated 3D/0D Cs–Pb–Cl perovskite composition composed of 3D CsPbCl3 and 0D Cs4PbCl6 NCs. The results reveal that the energy transfer efficiency and the photoluminescence quantum efficiency of the Cs–Pb–Cl composite are 65.3% and 77.3%, respectively, which are 1.4 and 3 times the corresponding values of the single‐phase CsPbCl3:Mn2+ NCs. Based on the detailed experimental and calculation results, the performance enhancement is demonstrated to stem from the optimized growth process of 3D CsPbCl3 NCs when co‐generating with 0D Cs4PbCl6 NCs. The strong lattice rigidity of the optimized CsPbCl3 NCs suppresses the nonradiative combination rate of the excitons, thus alleviating the main competing factor of the energy transfer process and improving the energy transfer efficiency. Fabrication of a white light‐emitting diode prototype further illustrates the application potential of the orange‐emitting Cs–Pb–Cl composite NCs for general lighting.

materials science, multidisciplinary,optics
CsPbBr3 Nanocrystal Light-Emitting Diodes with Efficiency up to 13.4% Achieved by Careful Surface Engineering and Device Engineering

Weilin Zheng,Qun Wan,Mingming Liu,Qinggang Zhang,Congyang Zhang,Ruixin Yan,Xiuping Feng,Long Kong,Liang Li

DOI: https://doi.org/10.1021/acs.jpcc.0c11085

2021-01-01

The Journal of Physical Chemistry C

Abstract:Perovskite nanocrystals (NCs) have gained great interest for next-generation light-emitting diodes (LEDs) prized for their spectrally tunable, narrow luminescence and their defect-tolerant electronic structure. Here, we provide a careful surface engineering to balance the passivation and charge injection by controlling the ligand density of didodecyl dimethyl ammonium bromide on NCs, which not only offers an improved photoluminescence quantum yield of >70% for NCs but also guarantees the effective charge injection and transportation of CsPbBr3 NC films for fabricating LEDs. Additionally, the optimization of the hole transport layer was implemented to offer more balanced charge transportation, which further improved the performance of CsPbBr3 NC-based LEDs with a peak external quantum efficiency of 13.4%.
Efficient And High-Luminance Perovskite Light-Emitting Diodes Based On Cspbbr3 Nanocrystals Synthesized From A Dual-Purpose Organic Lead Source

Haifeng Zhao,Zhangjun Hu,Linfeng Wei,Peng Zeng,Chaoyang Kuang,Xiaochun Liu,Sai Bai,Feng Gao,Mingzhen Liu

DOI: https://doi.org/10.1002/smll.202003939

IF: 13.3

2020-01-01

Small

Abstract:Rational engineering of the surface properties of perovskite nanocrystals (PeNCs) is critical to obtain light emitters with simultaneous high photoluminescence efficiency and excellent charge transport properties for light-emitting diodes (LEDs). However, the commonly used lead halide sources make it hard to rationally optimize the surface compositions of the PeNCs. In addition, previously developed ligand engineering strategies for conventional inorganic nanocrystals easily deteriorate surface properties of the PeNCs, bringing additional difficulties in optimizing their optoelectronic properties. In this work, a novel strategy of employing a dual-purpose organic lead source for the synthesis of highly luminescent PeNCs with enhanced charge transport property is developed. Lead naphthenate (Pb(NA)(2)), of which the metal ions work as lead sources while the naphthenate can function as the surface ligands afterward, is explored and the obtained products under different synthesis conditions are comprehensively investigated. Monodispersed cesium lead bromide (CsPbBr3) with controllable size and excellent optical properties, showing superior photoluminescence quantum yields up to 80%, is obtained. Based on the simultaneously enhanced electrical properties of the Pb(NA)(2)-derived PeNCs, the resultant LEDs demonstrate a high peak external quantum efficiency of 8.44% and a superior maximum luminance of 31 759 cd cm(-2).
Interfacial Regulation toward Efficient CsPbBr3 Quantum Dot-Based Inverted Perovskite Light-Emitting Diodes

Piaoyang Shen,Xuanyu Zhang,Ruifa Wu,Ting Zhang,Lei Qian,Wei Xu,Kai Kang,Dewei Zhao,Chaoyu Xiang

DOI: https://doi.org/10.1021/acsami.3c18816

2024-03-06

Abstract:Inverted perovskite light-emitting diodes (PeLEDs) based on quantum dots (QDs) are some of the most promising candidates for next-generation lighting and display applications. Due to the strong fluorescence quenching caused by zinc oxide, high performance in such inverted devices remains challenging. Here, we report an efficient inverted green CsPbBr3 QDs LED using an emitting buffer layer. Ultrathin CsPbBr3 QD emitters act as the buffer layer to reduce the interface luminescence quenching reaction at the ZnO/upper emitting layer interface, increasing the probability of exciton recombination within the emissive layer and regulating the charge transport, leading to effective carrier recombination. The resulting device exhibits an external quantum efficiency of 13.1%, enhanced by about 4.7 times compared with that without a buffer layer device. This work provides a path to fabricating high-performance inverted PeLEDs.
Improving the Performance and Stability of Perovskite Light-Emitting Diodes by a Polymeric Nanothick Interlayer-Assisted Grain Control Process

Loganathan Veeramuthu,Fang-Cheng Liang,Zhi-Xuan Zhang,Chia-Jung Cho,Ender Ercan,Chu-Chen Chueh,Wen-Chang Chen,Redouane Borsali,Chi-Ching Kuo

DOI: https://doi.org/10.1021/acsomega.0c00758

IF: 4.1

2020-04-09

ACS Omega

Abstract:CsPbBr3 is a promising light-emitting material due to its wet solution processability, high photoluminescence quantum yield (PLQY), narrow color spectrum, and cost-effectiveness. Despite such advantages, the morphological defects, unsatisfactory carrier injection, and stability issues retard its widespread applications in light-emitting devices (LEDs). In this work, we demonstrated a facile and cost-effective method to improve the morphology, efficiency, and stability of the CsPbBr3 emissive layer using a dual polymeric encapsulation governed by an interface-assisted grain control process (IAGCP). An eco-friendly low-cost hydrophilic polymer poly(vinylpyrrolidone) (PVP) was blended into the CsPbBr3 precursor solution, which endows the prepared film with a better surface coverage with a smoothened surface. Furthermore, it is revealed that inserting a thin PVP nanothick interlayer at the poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS)/emissive layer interface further promotes the film quality and the performance of the derived LED. It is mainly attributed to three major consequences: (i) reduced grain size of the emissive layer, which facilitates charge recombination, (ii) reduced current leakage due to the enhanced electron-blocking effect, and (iii) improved color purity and air stability owing to better defect passivation. As a result, the optimized composite emissive film can retain the luminescence properties even on exposure to ambient conditions for 80 days and ∼62% of its initial PL intensity can be preserved after 30 days of storage without any encapsulation.

chemistry, multidisciplinary
Compound doping enables efficient CsPbBr3 nanocrystal light emitting diodes

Fan Xu,Xiaoyu Yang,Qixuan Zhong,Lei Zhao,Yongqiang Ji

DOI: https://doi.org/10.1016/j.mtcomm.2023.107537

IF: 3.8

2023-12-01

Materials Today Communications

Abstract:All-inorganic cesium-based perovskite nanocrystals (PeNCs) attract much attentions in displays due to their facile synthesis protocol and superior luminous performance, while material instability hinders their practical applications. Herein, by inducing a multi-functional dopant, i.e., SrBr2, into the perovskite precursor solution, the as-formed SrBr2-doped CsPbBr3 NCs possess purer phases, suppressed defects and hydrophobic surfaces, which leads to a high photoluminescence quantum yield of ∼90 %, as well as much improved moisture stability. Benefiting from dopant passivation and improved luminescence properties, the doped CsPbBr3 light emitting diodes show five times and two times of current efficiency and external quantum efficiency improvements, respectively, in comparison to their undoped counterparts.

materials science, multidisciplinary
Synergistic Effect of Zn2+ Cation Doping and Te2− Anion Passivation on CsPbBrxI3‐x Nanocrystals for Efficient Perovskite Light‐Emitting Diodes

Rongwen Wang,Xi Wang,Jinming Ma,Xiangfu Liu,Chengxu Lu,Jibin Zhang,Guoli Tu

DOI: https://doi.org/10.1002/adom.202400883

IF: 9

2024-06-27

Advanced Optical Materials

Abstract:Mixed halide CsPbBrxI3‐x NCs are modified by a synergistic strategy of Zn2+ ion doping and Te2− ion passivation. The Zn2+/Te2− co‐modified CsPbBrxI3‐x NCs exhibit excellent stability against light radiation, high temperatures, and humidity. The pure‐red PeLEDs based on these NCs exhibit exceptional spectral stability with a peak external quantum efficiency of 16%. The challenges of instability and surface defects in CsPbBrxI3‐x nanocrystals (NCs) pose significant limitations on their potential application in high‐performance pure‐red perovskite light‐emitting diodes (PeLEDs). Herein, a synergistic strategy of divalent cation (Zn2+) doping and anion (Te2−) passivation is proposed to solve these issues. Density functional theory analysis reveals that the synergistic effect can not only reduce the formation energy of CsPbBrxI3‐x NCs but also increase theiodide vacancy defect formation energy of CsPbBrxI3‐x NCs. Consequently, the optimized Zn2+/Te2− co‐modified CsPbBrxI3‐x NCs exhibit significantly enhanced stability with a near‐unity photoluminescence efficiency. Pure‐red PeLEDs based on these CsPbBrxI3‐x NCs possess outstanding spectral stability with a maximum external quantum efficiency and luminance of 16.1% and 1397.2 cd m−2, respectively. This synergistic strategy provides a new approach for enhancing the performance of mixed halide perovskite NCs and the corresponding optoelectronic devices.

materials science, multidisciplinary,optics
CsPbBr3/Porous‐SiO2 Composite Film for Efficient Perovskite Light‐Emitting Diodes

Bong Woo Kim,Heejin Noh,Kyung Ho Kim,Hyeonji Lim,Taekyung Yu,Sang Hyuk Im

DOI: https://doi.org/10.1002/admi.202400116

IF: 5.4

2024-04-20

Advanced Materials Interfaces

Abstract:This study focuses on enhancing the performance of inorganic perovskite light‐emitting diodes by incorporating porous silica (p‐SiO2) to fabricate perovskite‐composite films for electroluminescence (EL) devices. The p‐SiO2 particles hinder the crystal growth of perovskite, resulting in smaller CsPbBr3 crystals. Surprisingly, the CsPbBr3/p‐SiO2 film exhibits good water‐resistant properties. The CsPbBr3/p‐SiO2 EL device shows outstanding luminescence efficiency, surpassing control samples by twofold. This study aims to enhance the performance of inorganic perovskite light‐emitting diodes (PeLEDs) by incorporating porous silica (p‐SiO2) to fabricate perovskite‐composite films for electroluminescence (EL) devices. This is because, in addition to the inorganic perovskite material, composites with inherently stable materials are needed for perovskite to ensure additional external stability. The introduced p‐SiO2 particles impede the crystal growth of perovskite during the anti‐solvent assisted crystallization process, resulting in the formation of smaller CsPbBr3 crystals in the CsPbBr3/p‐SiO2 composite film. Accordingly, compared to previous CsPbBr3 films, this composite film exhibits two folds with higher photoluminescence quantum yield (PLQY) due to improved crystalline formation. Surprisingly, the CsPbBr3/p‐SiO2 composite film additionally has good water‐resistant properties because the residual cetyltrimethylammonium bromide (CTAB) molecules are extracted from the p‐SiO2 particles and are oriented at the top surface of the CsPbBr3/p‐SiO2 composite film. The EL device fabricated with this composite film exhibits outstanding luminescence efficiency, with a current efficiency (CE) of 70.06 cd A−1 and an external quantum efficiency (EQE) of 16.97%, surpassing control samples by two folds of magnitude. Furthermore, the operational stability improves approximately sevenfold compared to the control, presenting a promising strategy for advancing the field of inorganic perovskite ELs.

materials science, multidisciplinary,chemistry
High-Performance All-Inorganic Architecture Perovskite Light-Emitting Diodes Based on Tens-of-Nanometers-Sized CsPbBr 3 Emitters in a Carrier-Confined Heterostructure

Xinquan Gong,Xiaoming Hao,Junjie Si,Yunzhou Deng,Kai An,Qianqing Hu,Qiuting Cai,Yun Gao,You Ke,Nana Wang,Zhuopeng Du,Muzhi Cai,Zhizhen Ye,Xingliang Dai,Zugang Liu

DOI: https://doi.org/10.1021/acsnano.3c09004

IF: 17.1

2024-03-14

ACS Nano

Abstract:Developing green perovskite light-emitting diodes (PeLEDs) with a high external quantum efficiency (EQE) and low efficiency roll-off at high brightness remains a critical challenge. Nanostructured emitter-based devices have shown high efficiency but restricted ascending luminance at high current densities, while devices based on large-sized crystals exhibit low efficiency roll-off but face great challenges to high efficiency. Herein, we develop an all-inorganic device architecture combined with...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
High-Performance All-Inorganic Architecture Perovskite Light-Emitting Diodes Based on Tens-of-Nanometers-Sized CsPbBr3 Emitters in a Carrier-Confined Heterostructure

Xinquan Gong,Xiaoming Hao,Junjie Si,Yunzhou Deng,Kai An,Qianqing Hu,Qiuting Cai,Yun Gao,You Ke,Nana Wang,Zhuopeng Du,Muzhi Cai,Zhizhen Ye,Xingliang Dai,Zugang Liu

DOI: https://doi.org/10.1021/acsnano.3c09004

IF: 17.1

2024-01-01

ACS Nano

Abstract:Developing green perovskite light-emitting diodes (PeLEDs) with a high external quantum efficiency (EQE) and low efficiency roll-off at high brightness remains a critical challenge. Nanostructured emitter-based devices have shown high efficiency but restricted ascending luminance at high current densities, while devices based on large-sized crystals exhibit low efficiency roll-off but face great challenges to high efficiency. Herein, we develop an all-inorganic device architecture combined with utilizing tens-of-nanometers-sized CsPbBr3 (TNS-CsPbBr3) emitters in a carrier-confined heterostructure to realize green PeLEDs that exhibit high EQEs and low efficiency roll-off. A typical type-I heterojunction containing TNS-CsPbBr3 crystals and wide-bandgap Cs4PbBr6 within a grain is formed by carefully controlling the precursor ratio. These heterostructured TNS-CsPbBr3 emitters simultaneously enhance carrier confinement and retain low Auger recombination under a large injected carrier density. Benefiting from a simple device architecture consisting of an emissive layer and an oxide electron-transporting layer, the PeLEDs exhibit a sub-bandgap turn-on voltage of 2.0 V and steeply rising luminance. In consequence, we achieved green PeLEDs demonstrating a peak EQE of 17.0% at the brightness of 36,000 cd m-2, and the EQE remained at 15.7% and 12.6% at the brightness of 100,000 and 200,000 cd m-2, respectively. In addition, our results underscore the role of interface degradation during device operation as a factor in device failure.

Boosting the Performance of CsPbBr3-based Perovskite Light-Emitting Diodes Via Constructing Nanocomposite Emissive Layers

Green Light-Emitting Diodes Based on Hybrid Perovskite Films with Mixed Cesium and Methylammonium Cations

Ions-induced Assembly of Perovskite Nanocomposites for Highly Efficient Light-Emitting Diodes with EQE Exceeding 30

Efficient Radiative Enhancement in Perovskite Light‐Emitting Devices Through Involving a Novel Sandwich Localized Surface Plasmon Structure

Enhanced performance of perovskite light-emitting-diodes based on ionic liquid modified CsPbBr3 nanocrystals

Enhanced Performance of Inverted CsPbBr3 Nanocrystal LEDs Via Zn (II) Doping

Efficient CsPbBr 3 Perovskite Light-Emitting Diodes via Novel Multi-Step Ligand Exchange Strategy Based on Zwitterionic Molecules

High-performance and Stable CsPbBr3 Light-Emitting Diodes Based on Polymer Additive Treatment.

Morphology and Luminescence Regulation for CsPbBr3 Perovskite Light-Emitting Diodes by Controlling Growth of Low-Dimensional Phases.

Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr 3 Quantum Dot-Based Inverted Light-Emitting Diodes.

CsPbBr3 Nanocrystal Light-Emitting Diodes with Efficiency Up to 13.4% Achieved by Careful Surface Engineering and Device Engineering

Enhanced Exciton‐to‐Mn2+ Energy Transfer in 3D/0D Cesium–Lead–Chloride Composite Perovskites

CsPbBr<sub>3</sub> Nanocrystal Light-Emitting Diodes with Efficiency up to 13.4% Achieved by Careful Surface Engineering and Device Engineering

Efficient And High-Luminance Perovskite Light-Emitting Diodes Based On Cspbbr3 Nanocrystals Synthesized From A Dual-Purpose Organic Lead Source

Interfacial Regulation toward Efficient CsPbBr3 Quantum Dot-Based Inverted Perovskite Light-Emitting Diodes

Improving the Performance and Stability of Perovskite Light-Emitting Diodes by a Polymeric Nanothick Interlayer-Assisted Grain Control Process

Compound doping enables efficient CsPbBr3 nanocrystal light emitting diodes

Synergistic Effect of Zn2+ Cation Doping and Te2− Anion Passivation on CsPbBrxI3‐x Nanocrystals for Efficient Perovskite Light‐Emitting Diodes

CsPbBr3/Porous‐SiO2 Composite Film for Efficient Perovskite Light‐Emitting Diodes

High-Performance All-Inorganic Architecture Perovskite Light-Emitting Diodes Based on Tens-of-Nanometers-Sized CsPbBr 3 Emitters in a Carrier-Confined Heterostructure

High-Performance All-Inorganic Architecture Perovskite Light-Emitting Diodes Based on Tens-of-Nanometers-Sized CsPbBr3 Emitters in a Carrier-Confined Heterostructure