Enhanced Performance of Inverted CsPbBr3 Nanocrystal LEDs Via Zn (II) Doping

Xiaowen Zhou,Yu Zhao,Wenzhe Huang,Yuanyuan Wu,Zhongen Wu,Gufeng He
DOI: https://doi.org/10.1016/j.orgel.2021.106253
IF: 3.868
2021-01-01
Organic Electronics
Abstract:Perovskite lighting-emitting diodes (PeLEDs) with inverted structure have been considered as promising display technology due to their suitable driving schemes with n-type thin-film transistors. However, the defects and imbalanced charge carriers in the CsPbBr3 nanocrystal (NC) PeLED are key hurdles, limiting the performance. Herein, we have successfully doped Zn2+ ions into CsPbBr3 NCs by ligand-assisted reprecipitation method, exhibiting an 85% enhancement of the photoluminescence quantum yield (PLQY). In addition, the optimized energy level alignment via Zn doping facilitates the carrier balance in the devices, improving the efficiencies. The obtained CsPbBr3:Zn-based PeLED reaches a high luminance of 3124 cd/m(2) and a maximum external quantum efficiency (EQE) of 0.85%, which are superior to those of CsPbBr3-based PeLED (luminance = 564 cd/m(2), EQE = 0.09%). The results demonstrate that Zn doping significantly enhances the performance of PeLED, which increases the potential of these inverted PeLEDs connected with n-type TFTs towards practical applications.
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