Abstract:Flexible field emission (FE) arrays have a wide range of applications in next generation low-cost, lightweight and wearable electronics, roll-up displays, and large-area circuits on curved objects, yet the growth of tapered, high-quality single-crystalline nanostructure-based emitters on flexible substrates with superior FE properties remains challenging and related work is limited. On the other hand, our recent studies have shown that silicon carbide (SiC) 1D nanostructures could meet nearly any stringent requirement for an ideal FE emitter. In this contribution, we report the growth of quasi-aligned, single-crystalline n-type doped (N-doped) 3C-SiC nanoneedles (3C-SiCNNs) on highly flexible carbon fabric via the catalyst assisted pyrolysis of polysilazane. The as-synthesized SiCNNs possess a tapered structure with tiny clear tips with sizes of several to tens of nanometers. The fabricated 3C-SiCNNs have extremely low emission turn-on fields (E-on) in the range of 0.5-1.6 V mu m(-1) with an average of 1.1 V mu m(-1), which is comparable to the lowest value ever reported for 1D nanostructure emitters that, however, are grown on rigid substrates. Specifically, our SiCNN arrays on carbon fabric are mechanically and electrically robust, and can withstand mechanical bending up to 500 times and still retain excellent FE performance with E-on of similar to 1.1 V mu m(-1). The field-enhancement factor has been calculated to be 6.5 x 10(3). The superior FE properties can be attributed to the significant enhancements of the tapered unique morphology and N-doping of the SiCNNs. Calculations based on local density functional theory suggest that nitrogen dopants in the 3C-SiC nanostructure could favor a more localized impurity state near the conduction band edge, which improves the electron field emission. We strongly believe that the present work will provide a new insight into the fabrication of flexible field emission arrays with ultralow turn-on fields enhanced by both shape and doping.

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Fabrication of Carbon Nanotube Lateral Field Emitters

Carbon Nanotubes As Field Emission Sources

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

Fabrication of cone-shaped CNF/SiC-coated Si-nanocone composite structures and their excellent field emission performance

Si Nanowire With Integrated Space-Charge- Limited Conducted Schottky Junction for Enhancing Field Electron Emission and Its Gated Devices

Enhanced Field Emission of Au Nanoparticle-Decorated SiC Nanowires

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Fabrication of Vertically Aligned Si Nanowires and Their Application in A Gated Field Emission Device

Hybrid Field Emitters: Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons (adv. Electron. Mater. 8/2019)

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Enhanced Field Emission from Large-Area Arrays of W18o49 Pencil-Like Nanostructure