Abstract:The recent development of the 5th-generation (5G) communication sytems has set increasingly strict requirements on the spectral purity of millimeter-wave (mm-wave) local oscillators (LO). Low phase noise is crucial to enable advanced modulation formats for high communication data-rates. Much effort has been made to improve the phase noise performance of the mm-wave LOs. A lower frequency voltage-controlled oscillator (VCO) together with a frequency multiplier can lower the phase noise [1]; however, the high-order harmonic components in VCOs are usually very weak, which requires additional power-consuming mm-wave amplification stages to satisfy the LO swing requirement. For single mm-wave fundamental VCOs, the minimal achievable phase noise is bounded by the smallest realizable inductor that displays a high Q factor. To avoid the “small inductor” problem, N oscillators with relatively large inductors can be coupled together to improve the phase noise by 10log 10 (N) [2-5]. Authors in [2] presented a quad-core bipolar VCO working around 15GHz as shown in Fig. 20.3.1 (Left), where four one-turn inductors are star-connected with the active cores placed in the middle. Resistors (Rc) are added to avoid undesired multi-tone concurrent oscillations. However, the four one-turn inductors still suffer from the Q-factor drop when the inductance decreases, thus limiting the highest achievable oscillation frequency. Besides, VDD at the inductor central taps and VSS at the tail current source are far from each other, making the V DD -V SS current return path long. This path has to be carefully modeled in simulations, especially in the mm-wave frequency range, where the return path inductance is comparable to the tank inductance. Instead of the star-connected topology, authors in [3] presented a circular-connected quad-core VCO working close to 30GHz, where the inductors are arranged in a circular topology as shown in Fig. 20.3.1 (Middle). The destructive coupling between the inner edges inside a small inductor is eliminated. Therefore, the minimal realizable inductance is further reduced while keeping a high Q factor. The central taps are connected by narrow metal traces to avoid latching and mode ambiguity. The VCO adopts a CMOS configuration, which limits the highest operating frequency. It would be difficult for this topology to be adopted in NMOS-only VCOs because the central taps have to be resistively isolated to suppress unwanted modes; therefore, they cannot be connected to the AC-ground power supply simultaneously as required by the NMOS-only configuration. Due to the lack of harmonic impedance control in the circular inductors, extra tail filtering transformers are added to improve the phase noise.

A FoM of −191 Db, 4.4-Ghz LC-VCO Integrating an 8-Shaped Inductor with an Orthogonal-Coupled Tail-Filtering Inductor

A 4.4-Ghz 193.2-Db FoM 8-Shaped-inductor Based LC-VCO Using Orthogonal-Coupled Triple-Coil Transformer

A Compact Square-Geometry Quad-Core 19 GHz Class-F VCO with Parallel Inductor-sharing Technique achieving -137.2 dBc/Hz Phase Noise at 10MHz Offset

An Improved Low Phase Noise LC-VCO with Wide Frequency Tuning Range Used in CPPLL

A Low Phase Noise VCO with Placement Reordered Cores and High-Q Bond Wire Array Inductors

A 12.5-to-15.4ghz, -118.9Dbc/hz PN at 1mhz Offset, and 191.0dbc/hz FoM VCO with Common-Mode Resonance Expansion and Simultaneous Differential 2Nd-Harmonic Output Using a Single Three-Coil Transformer in 65nm CMOS.

19.5 A 13.7-to-41.5GHz 214.1dBc/Hz FoM<inf>T</inf> Quad-Core Quad-Mode VCO Using an Oscillation-Mode-Splitting Technique

A Compact and Low Phase Noise Square-Geometry Quad-Core Class-F VCO Using Parallel Inductor-Sharing Technique

4.8 GHz CMOS fully integrated LC balanced oscillator with symmetrical noise filter technique and large tuning range

A 4.8GHz CMOS fully-integrated LC balanced oscillator with symmetry noise filtering technique

20.3 A 60GHz 186.5dBc/Hz FoM Quad-Core Fundamental VCO Using Circular Triple-Coupled Transformer with No Mode Ambiguity in 65nm CMOS

A 2.7-Mw 1.36–1.86-Ghz LC-VCO with a FOM of 202 Dbc/hz Enabled by a 26%-Size-reduced Nano-Particle-Magnetic-Enhanced Inductor

A 28-GHz–195-dB FoMA 3.72-GHz/V Class-B/C Nested-gm VCO With Coupled Tail Filtering in a 65-nm CMOS

A Class-C Eight-Phase Voltage-Controlled Oscillator With 184.2 dBc/Hz FoM and Loop-Based Superharmonic Coupling in 65nm CMOS

A 12.3–18.5-Ghz Single-Core Oscillator Using a Dual-Mode Variable Inductor with a Tunable Self-Resonant Frequency Technique

A 25MHz–6.44GHz LC-VCO using a 5-port inductor for multi-band frequency generation

A 194.9dbc/hz FoM and 6.8-to-11.6ghz Quad-Core Dual-Mode Class-F VCO Featuring Wideband Flicker Noise Suppression

A 4.2-5 GHz, Low Phase Noise LC-VCO with Constant Bandwidth and Small Tuning Gain

A 3 GHz Low Power LC VCO with Voltage Boosted Circuit from 0.5 V Supply

An 8.2-to-21.5 GHz Dual-Core Quad-Mode Orthogonal-Coupled VCO with Concurrently Dual-Output Using Parallel 8-Shaped Resonator

A 0.065 mm 2 Inductive Coupling Based Dual Core mm-Wave VCO With 183 dBc/Hz FoMT