Abstract:The recent development of the 5th-generation (5G) communication sytems has set increasingly strict requirements on the spectral purity of millimeter-wave (mm-wave) local oscillators (LO). Low phase noise is crucial to enable advanced modulation formats for high communication data-rates. Much effort has been made to improve the phase noise performance of the mm-wave LOs. A lower frequency voltage-controlled oscillator (VCO) together with a frequency multiplier can lower the phase noise [1]; however, the high-order harmonic components in VCOs are usually very weak, which requires additional power-consuming mm-wave amplification stages to satisfy the LO swing requirement. For single mm-wave fundamental VCOs, the minimal achievable phase noise is bounded by the smallest realizable inductor that displays a high Q factor. To avoid the “small inductor” problem, N oscillators with relatively large inductors can be coupled together to improve the phase noise by $10\\log _{10}(\\mathrm{N})[2 -5]$. Authors in [2] presented a quad-core bipolar VCO working around 15GHz as shown in Fig. 20.3.1 (Left), where four one-turn inductors are star-connected with the active cores placed in the middle. Resistors (Rc) are added to avoid undesired multi-tone concurrent oscillations. However, the four one-turn inductors still suffer from the Q-factor drop when the inductance decreases, thus limiting the highest achievable oscillation frequency. Besides, $\\mathrm{V}_{DD}$ at the inductor central taps and $\\mathrm{V}_{SS}$ at the tail current source are far from each other, making the $\\mathrm{V}_{DD}- \\mathrm{V}_{SS}$ current return path long. This path has to be carefully modeled in simulations, especially in the mm-wave frequency range, where the return path inductance is comparable to the tank inductance. Instead of the star-connected topology, authors in [3] presented a circular-connected quad-core VCO working close to 30GHz, where the inductors are arranged in a circular topology as shown in Fig. 20.3.1 (Middle). The destructive coupling between the inner edges inside a small inductor is eliminated. Therefore, the minimal realizable inductance is further reduced while keeping a high Q factor. The central taps are connected by narrow metal traces to avoid latching and mode ambiguity. The VCO adopts a CMOS configuration, which limits the highest operating frequency. It would be difficult for this topology to be adopted in NMOS-only VCOs because the central taps have to be resistively isolated to suppress unwanted modes; therefore, they cannot be connected to the AC-ground power supply simultaneously as required by the NMOS-only configuration. Due to the lack of harmonic impedance control in the circular inductors, extra tail filtering transformers are added to improve the phase noise.

A 28-GHz–195-dB FoMA 3.72-GHz/V Class-B/C Nested-gm VCO With Coupled Tail Filtering in a 65-nm CMOS

A 3.7-Mw $K$ -Band Dual-Feedbacks VCO Employing a Self-Inversed Transformer with 190-Dbc/hz FOM

A 60GHz voltage-controlled oscillator with a 3.6GHz tuning range in 180nm CMOS technology

A 4.4-Ghz 193.2-Db FoM 8-Shaped-inductor Based LC-VCO Using Orthogonal-Coupled Triple-Coil Transformer

A Ku-Band 20.4% Tuning Range VCO with a Tunable Harmonic-Resonant Transformer in 55 Nm CMOS

A Compact Square-Geometry Quad-Core 19 GHz Class-F VCO with Parallel Inductor-sharing Technique achieving -137.2 dBc/Hz Phase Noise at 10MHz Offset

A 0.065 mm 2 Inductive Coupling Based Dual Core mm-Wave VCO With 183 dBc/Hz FoMT

A 12.5-to-15.4ghz, -118.9Dbc/hz PN at 1mhz Offset, and 191.0dbc/hz FoM VCO with Common-Mode Resonance Expansion and Simultaneous Differential 2Nd-Harmonic Output Using a Single Three-Coil Transformer in 65nm CMOS.

An Ultra-Low-Power 65 nm Single-Tank 24.5-to-29.1 GHz Gm-Enhanced CMOS LC VCO Achieving 195.2 dBc/Hz FoM at 1 MHz

A 3.65-4.10 GHz Class-C VCO with 189.1 Dbc/hz FoM Based on Low Electromagnetic Coupling

An 8-12Ghz Class-F3 VCO with Multi-LC Tank in 28nm CMOS.

19.5 A 13.7-to-41.5GHz 214.1dBc/Hz FoM<inf>T</inf> Quad-Core Quad-Mode VCO Using an Oscillation-Mode-Splitting Technique

20.3 A 60GHz 186.5dBc/Hz FoM Quad-Core Fundamental VCO Using Circular Triple-Coupled Transformer with No Mode Ambiguity in 65nm CMOS

A 3 GHz Low Power LC VCO with Voltage Boosted Circuit from 0.5 V Supply

A 31–46 GHz Dual-Core Class-C VCO Using Switchable Transformers in 28-Nm CMOS

A 60GHz 186.5dBc/Hz FoM Quad-Core Fundamental VCO Using Circular Triple-Coupled Transformer with No Mode Ambiguity in 65nm CMOS

An Enhanced Class-F Dual-Core VCO With Common-Mode-Noise Self-Cancellation and Isolation Technique

A FoM of −191 Db, 4.4-Ghz LC-VCO Integrating an 8-Shaped Inductor with an Orthogonal-Coupled Tail-Filtering Inductor

A Class-C Eight-Phase Voltage-Controlled Oscillator With 184.2 dBc/Hz FoM and Loop-Based Superharmonic Coupling in 65nm CMOS

A 194.9dbc/hz FoM and 6.8-to-11.6ghz Quad-Core Dual-Mode Class-F VCO Featuring Wideband Flicker Noise Suppression

A 28-nm Dual-Mode Explicit Class-F23 VCO With Low-Loss CM Return Path Achieving 70–400-kHz 1/f3 PN Corner Over 4.9–7.3-GHz TR