Abstract:The recent development of the 5th-generation (5G) communication sytems has set increasingly strict requirements on the spectral purity of millimeter-wave (mm-wave) local oscillators (LO). Low phase noise is crucial to enable advanced modulation formats for high communication data-rates. Much effort has been made to improve the phase noise performance of the mm-wave LOs. A lower frequency voltage-controlled oscillator (VCO) together with a frequency multiplier can lower the phase noise [1]; however, the high-order harmonic components in VCOs are usually very weak, which requires additional power-consuming mm-wave amplification stages to satisfy the LO swing requirement. For single mm-wave fundamental VCOs, the minimal achievable phase noise is bounded by the smallest realizable inductor that displays a high Q factor. To avoid the “small inductor” problem, N oscillators with relatively large inductors can be coupled together to improve the phase noise by $10\\log _{10}(\\mathrm{N})[2 -5]$. Authors in [2] presented a quad-core bipolar VCO working around 15GHz as shown in Fig. 20.3.1 (Left), where four one-turn inductors are star-connected with the active cores placed in the middle. Resistors (Rc) are added to avoid undesired multi-tone concurrent oscillations. However, the four one-turn inductors still suffer from the Q-factor drop when the inductance decreases, thus limiting the highest achievable oscillation frequency. Besides, $\\mathrm{V}_{DD}$ at the inductor central taps and $\\mathrm{V}_{SS}$ at the tail current source are far from each other, making the $\\mathrm{V}_{DD}- \\mathrm{V}_{SS}$ current return path long. This path has to be carefully modeled in simulations, especially in the mm-wave frequency range, where the return path inductance is comparable to the tank inductance. Instead of the star-connected topology, authors in [3] presented a circular-connected quad-core VCO working close to 30GHz, where the inductors are arranged in a circular topology as shown in Fig. 20.3.1 (Middle). The destructive coupling between the inner edges inside a small inductor is eliminated. Therefore, the minimal realizable inductance is further reduced while keeping a high Q factor. The central taps are connected by narrow metal traces to avoid latching and mode ambiguity. The VCO adopts a CMOS configuration, which limits the highest operating frequency. It would be difficult for this topology to be adopted in NMOS-only VCOs because the central taps have to be resistively isolated to suppress unwanted modes; therefore, they cannot be connected to the AC-ground power supply simultaneously as required by the NMOS-only configuration. Due to the lack of harmonic impedance control in the circular inductors, extra tail filtering transformers are added to improve the phase noise.

A 12.5-to-15.4ghz, -118.9Dbc/hz PN at 1mhz Offset, and 191.0dbc/hz FoM VCO with Common-Mode Resonance Expansion and Simultaneous Differential 2Nd-Harmonic Output Using a Single Three-Coil Transformer in 65nm CMOS.

A Ku-Band 20.4% Tuning Range VCO with a Tunable Harmonic-Resonant Transformer in 55 Nm CMOS

A Low-Phase-Noise VCO with Common-Mode Resonance Expansion and Intrinsic Differential 2Nd-Harmonic Output Based on a Single Three-Coil Transformer

Design of a Low-Phase-Noise 70-/105-GHz Dual-Band VCO With Common Mode Resonance Expansion

A 4.4-Ghz 193.2-Db FoM 8-Shaped-inductor Based LC-VCO Using Orthogonal-Coupled Triple-Coil Transformer

A 12.9-to-24 GHz Dual-Mode Multi-Coil VCO Achieving 199.2 Dbc/hz Peak FoMT in 65-Nm CMOS

A 2.9-to-7.2 GHz Dual-Core Quad-Mode VCO Achieving 206.5dbc/hz FoMT in 55nm CMOS

An X-Band CMOS VCO Using Ultra-Wideband Dual Common-Mode Resonance Technique

A 226 GHz Coupled Harmonic VCO with 9.34% Tuning Range Utilizing Three-Coil Transformer with Switched Inductor in 65nm CMOS

A 60GHz 186.5dBc/Hz FoM Quad-Core Fundamental VCO Using Circular Triple-Coupled Transformer with No Mode Ambiguity in 65nm CMOS

19.5 A 13.7-to-41.5GHz 214.1dBc/Hz FoM<inf>T</inf> Quad-Core Quad-Mode VCO Using an Oscillation-Mode-Splitting Technique

20.3 A 60GHz 186.5dBc/Hz FoM Quad-Core Fundamental VCO Using Circular Triple-Coupled Transformer with No Mode Ambiguity in 65nm CMOS

An Enhanced Class-F Dual-Core VCO With Common-Mode-Noise Self-Cancellation and Isolation Technique

A 22.5-37.8GHz Dual-Mode Class-F VCO with an Implicit Multiplier in 65-nm CMOS

A 3.16-7 Ghz Transformer-Based Dual-Band Cmos Vco

A 9.9-11.8 GHz CMOS Dual-Core Class-F23 VCO Achieving 190.4 Dbc/hz FoM with Inter-Core-Shaping

A 194.9dbc/hz FoM and 6.8-to-11.6ghz Quad-Core Dual-Mode Class-F VCO Featuring Wideband Flicker Noise Suppression

A Low-Phase-Noise Quad-Core Millimeter-Wave Fundamental VCO Using Circular Triple-Coupled Transformer in 65-Nm CMOS

A 4.5-to-13.5-ghz Single-Transformer Quad-Mode VCO with 202.5-Dbc/hz FoM $_{\Mathrm{t}}$

A 3.09-to-4.04GHz Distributed-Boosting and Harmonic-Impedance-Expanding Multi-Core Oscillator with-138.9dBc/Hz at 1MHz Offset and 195.1dBc/Hz FoM

A Transformer-Based Series-Resonance CMOS VCO