Abstract:The rapid development of the next-generation high-speed wireless communication system has set increasingly stringent requirements on the spectral purity of local RF oscillators. Low phase noise is crucial to support advanced modulation scheme enabling high data-rates wireless link [1]. A viable popular approach is to coupled N identical oscillators together to improve the phase noise by 10log <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</inf> N at the cost of N times higher power [2]–[6]. Nevertheless, the coupling network needs to be designed carefully to avoid undesired multi-tone concurrent oscillations. Besides, area occupation is another issue of multi-core VCOs. The star-geometry as shown in Fig. 1. (bottom left), which is simple N times duplication of single core, occupies N times larger area so comes with an area penalty [3]–[5]. To solve this problem, circular geometry is proposed where the passives are merged into a single passive structure and the minimal realizable inductance is reduced while keeping a high Q factor [6]–[7]. In order to further reduce the silicon area, a square-geometry quad-core oscillator with inductor sharing technique is proposed in this paper and it exhibits a compact area of 0.09 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is the smallest quad-core VCO operating at a similar oscillation frequency. The unwanted mode is suppressed by the metal trace that connects the drain node of adjacent cores. Thanks to the proposed square-geometry and inductor sharing technique, the proposed quad-core class-F VCO can further reduce the area occupation. The proposed VCO is fabricated in 65nm CMOS technology. The measured phase noise is -137.2 dB/Hz at 10 MHz offset frequency from a carrier of 19 GHz, which translates to the FoM of 186.1 dBc/Hz.

A Low Phase Noise VCO with Placement Reordered Cores and High-Q Bond Wire Array Inductors

A Compact Square-Geometry Quad-Core 19 GHz Class-F VCO with Parallel Inductor-sharing Technique achieving -137.2 dBc/Hz Phase Noise at 10MHz Offset

An Ultra-Low-Voltage High-Performance VCO in 0.13 μm CMOS

A 4.4-Ghz 193.2-Db FoM 8-Shaped-inductor Based LC-VCO Using Orthogonal-Coupled Triple-Coil Transformer

A Low Phase Noise 11.8-15.3 GHz CMOS LC-VCO with High-Q Inductor

A Low Phase Noise Low Power Wide Tuning-Range VCO Using Transistor-Based Active Inductor

A Low-Phase-Noise Quad-Core Millimeter-Wave Fundamental VCO Using Circular Triple-Coupled Transformer in 65-Nm CMOS

A Low Phase-Noise LC Voltage Controlled Oscillator in CMOS Technology

A Low Phase Noise Wideband VCO with 8-Shaped Inductor

A Two-Story Quad-Core Dual-Mode VCO in 65-Nm CMOS

A Low Phase Noise and Wide Tuning Range Millimeter-Wave VCO Using Switchable Coupled VCO-Cores

Low-Phase-Noise Wideband Vco with Optimised Sub-Nh Inductor

A 12.3–18.5-Ghz Single-Core Oscillator Using a Dual-Mode Variable Inductor with a Tunable Self-Resonant Frequency Technique

A Low-Phase-Noise Harmonic-Shaping Oscillator in 40-Nm CMOS Technology

A Compact and Low Phase Noise Square-Geometry Quad-Core Class-F VCO Using Parallel Inductor-Sharing Technique

An Enhanced Class-F Dual-Core VCO With Common-Mode-Noise Self-Cancellation and Isolation Technique

A 3.65-4.10 GHz Class-C VCO with 189.1 Dbc/hz FoM Based on Low Electromagnetic Coupling

Design and implementation of LC voltage controlled oscillator with low phase noise

2.49–4.91 GHz Wideband VCO with Optimised 8‐shaped Inductor

A 6-9.3GHz Low Phase Noise Quad-Core LC VCO in 65nm CMOS

An Ultralow Phase Noise Eight-Core Fundamental 62-to-67-ghz VCO in 65-Nm CMOS