Abstract:The rapid development of the next-generation high-speed wireless communication system has set increasingly stringent requirements on the spectral purity of local RF oscillators. Low phase noise is crucial to support advanced modulation scheme enabling high data-rates wireless link [1]. A viable popular approach is to coupled N identical oscillators together to improve the phase noise by 10log <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</inf> N at the cost of N times higher power [2]–[6]. Nevertheless, the coupling network needs to be designed carefully to avoid undesired multi-tone concurrent oscillations. Besides, area occupation is another issue of multi-core VCOs. The star-geometry as shown in Fig. 1. (bottom left), which is simple N times duplication of single core, occupies N times larger area so comes with an area penalty [3]–[5]. To solve this problem, circular geometry is proposed where the passives are merged into a single passive structure and the minimal realizable inductance is reduced while keeping a high Q factor [6]–[7]. In order to further reduce the silicon area, a square-geometry quad-core oscillator with inductor sharing technique is proposed in this paper and it exhibits a compact area of 0.09 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is the smallest quad-core VCO operating at a similar oscillation frequency. The unwanted mode is suppressed by the metal trace that connects the drain node of adjacent cores. Thanks to the proposed square-geometry and inductor sharing technique, the proposed quad-core class-F VCO can further reduce the area occupation. The proposed VCO is fabricated in 65nm CMOS technology. The measured phase noise is -137.2 dB/Hz at 10 MHz offset frequency from a carrier of 19 GHz, which translates to the FoM of 186.1 dBc/Hz.

An 8.2 GHz triple coupling low-phase-noise class-F QVCO in 65nm CMOS.

A Superharmonic Injection based G-band Quadrature VCO in CMOS

A 60GHz voltage-controlled oscillator with a 3.6GHz tuning range in 180nm CMOS technology

A Compact Square-Geometry Quad-Core 19 GHz Class-F VCO with Parallel Inductor-sharing Technique achieving -137.2 dBc/Hz Phase Noise at 10MHz Offset

A Low Phase Noise VCO with Placement Reordered Cores and High-Q Bond Wire Array Inductors

A 1.8-V 6/9-GHz switchable dual-band quadrature LC VCO in SiGe BiCMOS technology

An Optimally Coupled Low Phase Noise Wideband Quadrature Voltage-Controlled Oscillator

A 4.4-Ghz 193.2-Db FoM 8-Shaped-inductor Based LC-VCO Using Orthogonal-Coupled Triple-Coil Transformer

A low-voltage low-phase-noise bottom-series LC QVCO using capacitor tapping technique

An Ultra-Low-Voltage High-Performance VCO in 0.13 μm CMOS

A 5.6 Similar To 8.2ghz Qvco With A New Dcca Circuit

A 5.6∼8.2ghz QVCO with a New DCCA Circuit

A Quadrature VCO with Phase Noise Optimization for Wide Tuning Triple Band Frequency Generation

A Class-C Eight-Phase Voltage-Controlled Oscillator With 184.2 dBc/Hz FoM and Loop-Based Superharmonic Coupling in 65nm CMOS

A Low-Phase-Noise Lc Qvco With Bottom-Series Coupling And Capacitor Tapping

An 8-12Ghz Class-F3 VCO with Multi-LC Tank in 28nm CMOS.

A Low-Phase-Noise Quad-Core Millimeter-Wave Fundamental VCO Using Circular Triple-Coupled Transformer in 65-Nm CMOS

Low phase noise injection-locked doubler-based quadrature CMOS VCO

Analysis and design of a new low‐phase noise and Gm‐enhanced class‐C quadrature VCO

A Low Phase Noise 8.8 GHz VCO Based on ISF Manipulation and Dual-Tank Technique

Some design aspects on 5GHz CMOS quadrature VCO with fully integrated LC-tank