Abstract:Silicon Carbide (SiC) MOSFETs have gained significant attention in power electronics for their superior characteristics. Despite advances in 1.2kV SiC MOSFET generations, a comprehensive comparative analysis of different device types remains limited. This study examines the short-circuit (SC) behavior of 1.2kV SiC MOSFETs across multiple vendors and generations, including planar and trench structures. Key metrics such as Short Circuit Withstand Time (SCWT), SC energy, SC peak power, SC energy density, and SC current density were evaluated at DC bus voltages of 400V, 600V, and 800V. Our findings reveal that third-generation (3G) devices exhibit inferior SC performance due to smaller die areas that impede heat dissipation, with 800V survival times as low as 2.25 μs for GeneSiC-3G. In contrast, trench-based designs showed improved resilience. Infineon-1G, with an active area 44.3% smaller than Littelfuse-1G and 45% smaller than CREE-2G, achieved comparable SCWT (4.5 μs vs. 4.5 μs for Littelfuse and 4 μs for CREE-2G) while demonstrating superior thermal management, with a SC energy density of 0.096 J/mm² and current density of 41.74 A/mm² at 800V. Similarly, another trench device, Rohm-3G, outperformed planar 3G devices, with a SCWT of 3.5 μs and peak power of 110 kW at 800V. Post-SC failure mechanisms were systematically analyzed using optical microscopy, Lock-In Thermal Emission Microscopy (LITEM), and Focused Ion Beam (FIB), revealing gate leakage paths and damage in the active regions and two-finger area. These findings offer significant insights into the trade-offs between on-state performance and SC robustness, providing manufacturers and designers with crucial guidance for developing optimized SiC MOSFET designs for high-power applications.

Power Cycling Capability Comparison Of Si And Sic Mosfets Under Different Conduction Modes

Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Comparative Study on Reliability and Application Features of SiC MOSFET

Degradation Assessment of 1.2-Kv SiC MOSFETs and Comparative Study with 1.2-Kv Si IGBTs under Power Cycling

Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

Competitive Failures Decoupling and Mechanisms Analysis of SiC MOSFET Module Under Power Cycling Stress

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Comparisons of SiC and Si devices for PMSM drives

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison between Planar-Gate and Trench-Gate Structures

Failure Mechanism Analysis of 1.2 kV SiC MOSFETs Under Low-Temperature Storage, Power Cycling, and Short-Circuit Interactions

Comparative Evaluation of the Short Circuit Capability of SiC Planar and Trench Power MOSFET

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

Comparison and Analysis of Short Circuit Performance of 1200V SiC MOSFETs

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Behavioral Comparison Of Si And Sic Power Mosfets For High-Frequency Applications

Comparison of 1700-V SiC-MOSFET and Si-IGBT Modules Under Identical Test Setup Conditions

Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications

Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT

Methodology for Enhanced Short-Circuit Capability of SiC MOSFETs