Abstract:Pb(Zr0.4Ti0.6)O-3 thin films with a thickness of 500 nm were spin coated on (110) preferred Pt bottom electrodes using a sol-gel method, in which the (110) preferred Pt bottom electrode was developed by using a (100)-oriented conductive oxide electrode LaNiO3 film as an adhesion layer on a SiO2/Si substrate. X-ray diffraction analysis and field emission scanning electron microscopy show that the as-grown Pb(Zr0.4Ti0.6)O-3 films are highly (110)-oriented with a columnar structure. It indicates that the (110) preferred Pt bottom electrode is effective for growing highly (110)-oriented Pb(Zr0.4Ti0.6)O-3 films. The as-grown Pb(Zr0.4Ti0.6)O-3 films show excellent dielectric and ferroelectric properties with dielectric constant epsilon(T)(33)/epsilon(0)=1620, loss tangent tan delta=2.1%, spontaneous polarization 2P(s)=158 mu C/cm(2), and remnant polarization 2P(r)=92 mu C/cm(2). Excellent pyroelectric properties are also detected in the (110)-oriented films. At room temperature, the pyroelectric coefficient and the figure of merit for detectivity can reach up to 7.8x10(-4) C m(-2) K-1 and 1.79x10(-5) Pa-0.5, respectively. (c) 2007 American Institute of Physics.

Growth of Highly Oriented of Pb(Zrx, Ti1−x)O3 Film on Porous Silicon

Enhanced Ferroelectric Properties of Highly (100) Oriented Pb(Zr0.52ti0.48)O-3 Thick Films Prepared by Chemical Solution Deposition

Preparation of (001)-oriented PZT thick films on silicon wafer by pulsed laser deposition

Ferroelectric And Pyroelectric Properties Of Highly (110)-Oriented Pb(Zr0.40ti0.60)O-3 Thin Films Grown On Pt/Lanio3/Sio2/Si Substrates

Structure and Dielectric Properties of Highly (100)-Oriented PST Thin Films Deposited on MgO Substrates

Growth of Highly C-Axis-oriented Pb(Zr0.53Ti0.47) O3 Thin Films on LaNiO3 Electrodes by Pulsed Laser Ablation

Crystal Orientation Dependence on Electrical Properties of Pb(Zr,Ti)O3 Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition

Preparation of Pb(Zr0.52Ti484848)O3 Thin Films on Silicon-on-insulator Substrates by Excimer Laser Deposition Combined with Rapid Thermal Annealing

Preparation of Pb(Zr<sub>0.52</sub>Ti484848)O<sub>3</sub> thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

Synthesis of Highly Oriented Lead Zirconate–Lead Titanate Film Using Metallo‐organics

Pulsed Excimer Laser Deposition and Rapid Thermal Annealing of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films on Si-on-Insulator

Preferred orientation controlling of PZT (52–48) thin films prepared by sol–gel process

Phase compositions and ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin films with different highly orientations prepared by a sol–gel route

Characterization of Pb(Zr,Ti)O-3 Thin-Films on Soi Prepared by Excimer-Laser Deposition

Ferroelectric Characteristics Of Oriented Pb(Zr1-Xtix)O-3 Films

Preparation of Pb(Zr0.52Ti0.48)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

Dielectric Properties of Oriented PbZrO3 Thin Films Grown by Sol-Gel Process

High throughput physical vapor deposition growth of Pb(ZrxTi1-x)O3 perovskite thin films growth on silicon substrates.

Oriented Growth In Pzt Thin Films

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Growth of orientation-controlled Pb(Mg,Nb)O 3 -PbTiO 3 thin films on Si(100) by using oriented MgO films as buffers