Abstract:In preparing Cu2ZnSnSe4 (CZTSe) thin films, selenization at high Se pressure is likely to form a thick molybdenum diselenide (MoSe2) layer. An excessively thick MoSe2 layer degrades the performance of CZTSe solar cells. Annealing under low Se pressure has been suggested to prevent the formation of such a thick MoSe2 layer. However, the potential loss of Sn metal from CZTSe thin films at low Se pressure or high temperature raises the additional difficulty of controlling the compositions and phases of the films. Carefully controlling these selenization parameters to yield high-quality CZTSe thin films is important. This study investigates the loss of Sn and the formation of molybdenum diselenide in CZTSe thin films at low Se pressure. Three-step selenization at low Se pressure is performed on an electrodeposited Cu/Sn/Zn precursor to prepare high-quality CZTSe thin films. In the first step, rapid thermal annealing with a substrate temperature of 500°C and a low Se vapor pressure of 4.6Pa was performed to reduce the loss of Sn and the thickness of the MoSe2 layer, and thus to obtain a Cu-poor and Zn-rich film. In the second step, a high annealing temperature of 570°C and an inert gas at high pressure was used to improve elemental diffusion and increase the uniformity of the elemental distribution. In the third step, thermal annealing with a substrate temperature of 500°C and a low Se vapor pressure of 4.6Pa was performed to reduce the loss of Sn and the thickness of the MoSe2 layer, and to eliminate the impurity phase of SnSe (which was formed in the second step of annealing) on the surface of the CZTS films. The loss of Sn and the formation of molybdenum diselenide in the CZTSe thin films are negligible when this three-step selenization at low Se pressure is used. When the selenization parameters are properly controlled, CZTSe solar cells with an efficiency of as high as 8.2% can be obtained.

Over 10% Efficient Pure CZTSe Solar Cell Fabricated by Electrodeposition with Ge Doping

Kesterite Cu2znsn(S,Se)(4) Solar Cells with Beyond 8% Efficiency by A Sol Gel and Selenization Process

Above 10% efficient electrodeposited Cu2ZnSn(S,Se)4 solar cell achieved by modifying precursor

Over 10% Efficiency Pure Sulfide Kesterite Solar Cells on Transparent Electrode with Cd-Ag Co-Alloying

Achieving 11.95% Efficient Cu2ZnSnSe4 Solar Cells Fabricated by Sputtering a Cu-Zn-Sn-Se Quaternary Compound Target with a Selenization Process

10% Efficiency Cu2ZnSn(S,Se)4 Thin Film Solar Cells Fabricated by Magnetron Sputtering with Enlarged Depletion Region Width

Investigation on the Structure and Morphology of CZTSe Solar Cells by Adjusting Cu–Ge Buffer Layers

Co-electrodeposited Cu2ZnSnS4 thin-film solar cells with over 7% efficiency fabricated via fine-tuning of the Zn content in absorber layers

A CZTSe Solar Cell with 8.2% Power Conversion Efficiency Fabricated Using Electrodeposited Cu/Sn/Zn Precursor and a Three-Step Selenization Process at Low Se Pressure

N‐Type Surface Design for p‐Type CZTSSe Thin Film to Attain High Efficiency

Cadmium‐Free Kesterite Thin‐Film Solar Cells with High Efficiency Approaching 12%

An Efficient Cr-doping Strategy to Optimize the Solution-Processed Cu2ZnSn(S,Se)4 Solar Cells for Better Optoelectronic Performance

Regulating SnZn Defects and Optimizing Bandgap in the Cu2ZnSn(S,Se)4 Absorption Layer by Ge Gradient Doping for Efficient Kesterite Solar Cells

Fabrication of Cu2ZnSnS4solar Cells with 5.1% Efficiency Via Thermal Decomposition and Reaction Using a Non-Toxic Sol–gel Route

CZTSSe solar cell with an efficiency of 10.19% based on absorbers with homogeneous composition and structure using a novel two-step annealing process

8.36% Efficient CZTS Solar Cells on Transparent Electrode Via Solution Processing

Tailoring the Defects and Carrier Density for Beyond 10% Efficient CZTSe Thin Film Solar Cells

Positive Role of Inhibiting CZTSSe Decomposition on Intrinsic Defects and Interface Recombination of 12.03% Efficient Kesterite Solar Cells

Preparation and Characterization of Ag2ZnSn(S,Se)4 and Its Application in Improvement of Power Conversion Efficiency of Cu2ZnSn(S,Se)4-based Solar Cells

All-Layer Sputtering-Free Cu2Zn1-xCdxSnS4 Solar Cell with Efficiency Exceeding 7.5%

Surprising Efficiency Enhancement of Cu2ZnSn(S,Se)4 Solar Cells with Abnormal Zn/Sn Ratios