Abstract:The major challenge in preparing high-performance Cu2ZnSn(S,Se)4 solar cells is the large open circuit voltage deficit (VOC-def). A new strategy utilizing the synergistic substitution of Ag and In dual cations has been proposed to simultaneously address the problems of undesirable interface band alignment and high-density detrimental bulk defects, obtaining decreased carrier recombination rate and increased minority carrier lifetime. The shorter In-S/Se bonds move the CBM higher by generating stronger repulsive force than the Sn-S/Se bonds, thus adjusting the interface band alignment. Ag substitution can effectively suppress Cu─Zn disorder, while Ag, In dual substitution can further passivate Sn-related defects and solve the issue of low carrier concentration in Ag single-substituted samples. Besides, the superior carrier property of In-Se materials significantly enhanced the device carrier lifetime and minority carrier diffusion length. The state-of-the-art air-solution-processed CZTSSe device without any addition treatment with 14.33% efficiency and 580 mV VOC is obtained, possessing the lowest VOC-def value currently available in the CZTSSe field (VOC/VOC SQ = 64.7%). This work emphasizes the synergistic modulation of band alignment, defect level, grain growth, and carrier transportation by dual cation substitution, which paves a convenient and effective way to realize high-performance solar cells and photovoltaic devices.

Positive Role of Inhibiting CZTSSe Decomposition on Intrinsic Defects and Interface Recombination of 12.03% Efficient Kesterite Solar Cells

Defect Control for 12.5% Efficiency Cu2 ZnSnSe4 Kesterite Thin-Film Solar Cells by Engineering of Local Chemical Environment

Defect Control for 12.5% Efficiency Cu2ZnSnSe4 Kesterite Thin-Film Solar Cells by Engineering of Local Chemical Environment

Realization of 11.5% Efficiency Cu2ZnSn(S,Se)4 Thin‐Film Solar Cells by Manipulating the Phase Structure of Precursor Films

Suppressing Surface and Bulk Effect Enables High Efficiency Solution-Processed Kesterite Solar Cells

Heterojunction Reconstruction Via in Doping Towards High-Efficiency CZTSSe Solar Cells

Toward High Efficient Cu2 ZnSn(Sx ,Se1- x )4 Solar Cells: Break the Limitations of VOC and FF

Realization of 11.5% Efficiency Cu 2 ZnSn(S,Se) 4 Thin‐Film Solar Cells by Manipulating the Phase Structure of Precursor Films

Suppressing Element Inhomogeneity Enables 14.9% Efficiency CZTSSe Solar Cells

Toward High Efficient Cu2ZnSn(Sx,Se1−x)4 Solar Cells: Break the Limitations of VOC and FF

Energy Band Alignment and Defect Synergistic Regulation Enable Air-Solution-Processed Kesterite Solar Cells with the Lowest VOC Deficit.

Multinary alloying for facilitated cation exchange and suppressed defect formation in kesterite solar cells with above 14% certified efficiency

Suppressing Deep-Level Trap Toward over 13% Efficient Solution-Processed Kesterite Solar Cell

Interfaces of High-Efficiency Kesterite Cu 2 ZnSnS(e) 4 Thin Film Solar Cells

Synergistic Crystallization Modulation and Defects Passivation in Kesterite via Anion-Coordinate Precursor Engineering for Efficient Solar Cells

Defect-level Trap Optimization in Cu2ZnSn(S,Se)4 Photovoltaic Materials Via Sb3+-doping for over 13% Efficiency Solar Cells

Achieving 11.23 % Efficiency in CZTSSe Solar Cells Via Defect Control and Interface Contact Optimization

High Efficiency Cu 2 ZnSn(S,Se) 4 Solar Cells with Shallow Li Zn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

Interface Recombination of Cu 2 ZnSnS 4 Solar Cells Leveraged by High Carrier Density and Interface Defects

Defects in Kesterite Materials towards High-efficiency Solar Cells: Origin, Impact, Characterization, and Engineering

Interface Recombination of Cu2ZnSnS4 Solar Cells Leveraged by High Carrier Density and Interface Defects