Abstract:Actomic layer deposition processed SnOx is introduced as electron transport layer in Sb2Se3 thin‐film solar cells. An additional post‐annealing can remarkably enhance the photovoltaic performance, thanks to the optimized carrier dynamics under simultaneously improving the properties of SnOx, Sb2Se3/SnOx heterojunction and Sb2Se3 absorber layer. A stimulating efficiency of 7.39% represents the record value for Cd‐free substrate structured Sb2Se3 solar cells. Antimony selenide (Sb2Se3) is a highly promising photovoltaic material thanks to its outstanding optoelectronic properties, as well as its cost‐effective and eco‐friendly merits. However, toxic CdS is widely used as an electron transport layer (ETL) in efficient Sb2Se3 solar cells, which largely limit their development toward market commercialization. Herein, an effective green Cd‐free ETL of SnOx is introduced and deposited by atomic layer deposition method. Additionally, an important post‐annealing treatment is designed to further optimize the functional layers and the heterojunction interface properties. Such engineering strategy can optimize SnOx ETL with higher nano‐crystallinity, higher carrier density, and less defect groups, modify Sb2Se3/SnOx heterojunction with better interface performance and much desirable "spike‐like" band alignment, and also improve the Sb2Se3 light absorber layer quality with passivated bulk defects and prolonged carrier lifetime, and therefore to enhance carrier separation and transport while suppressing non‐radiative recombination. Finally, the as‐fabricated Cd‐free Mo/Sb2Se3/SnOx/ITO/Ag thin‐film solar cell exhibits a stimulating efficiency of 7.39%, contributing a record value for Cd‐free substrate structured Sb2Se3 solar cells reported to date. This work provides a viable strategy for developing and broadening practical applications of environmental‐friendly Sb2Se3 photovoltaic devices.

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Quasiepitaxy Strategy for Efficient Full‐Inorganic Sb2S3 Solar Cells

Hydrazine Hydrate‐Induced Surface Modification of CdS Electron Transport Layer Enables 10.30%‐efficient Sb2(S,Se)3 Planar Solar Cells

Quasiepitaxy Strategy for Efficient Full‐Inorganic Sb <sub>2</sub> S <sub>3</sub> Solar Cells

Improved Open‐Circuit Voltage of Sb2Se3 Thin‐Film Solar Cells Via Interfacial Sulfur Diffusion‐Induced Gradient Bandgap Engineering

Oxygen‐Assisted Tailoring of Evaporated PbS Hole Transport Layer for Highly Efficient Antimony Sulfide Solar Cells

Space-Charging Interfacial Layer by Illumination for Efficient Sb2S3 Bulk-Heterojunction Solar Cells with High Open-Circuit Voltage

Comparative Study of TiO2 and CdS As the Electron Transport Layer for Sb2S3 Solar Cells

Improved Open‐Circuit Voltage of Sb 2 Se 3 Thin‐Film Solar Cells Via Interfacial Sulfur Diffusion‐Induced Gradient Bandgap Engineering

Sputtered and Selenized Sb2Se3 Thin-Film Solar Cells with Open-Circuit Voltage Exceeding 500 Mv

Negative-pressure Sulfurization of Antimony Sulfide Thin Films for Generating a Record Open-Circuit Voltage of 805 Mv in Solar Cell Applications

Synergistic effect through the introduction of inorganic zinc halide in the interface of TiO2 and Sb2S3 for high-performance Sb2S3 planar thin film solar cell.

Electron Transport Layer Engineering Induced Carrier Dynamics Optimization for Efficient Cd‐Free Sb2Se3 Thin‐Film Solar Cells

Electron Transport Layer Engineering Induced Carrier Dynamics Optimization for Efficient Cd-Free Sb2 Se3 Thin-Film Solar Cells.

Heterojunction Interface Engineering Enabling High Transmittance and Record Efficiency in Sb2s3 Semitransparent Solar Cell

Synergistic Effect Through The Introduction Of Inorganic Zinc Halides At The Interface Of Tio2 And Sb2s3 For High-Performance Sb2s3 Planar Thin-Film Solar Cells

Reactive DC Sputtered TiO2 Electron Transport Layers for Cadmium‐Free Sb2Se3 Solar Cells

Remarkable Cd-free Sb<sub>2</sub>Se<sub>3</sub> solar cell yield achieved by interface band-alignment and growth orientation screening

Molecular Beam Epitaxy Deposition of In Situ O‐Doped CdS Films for Highly Efficient Sb2(S,Se)3 Solar Cells

Heterojunction Interface Engineering of C60 Electron Transport Layer Insertion Enables Efficient Cd-Free Sb2se3 Solar Cells

Negative-pressure sulfurization of antimony sulfide thin films for generating record open-circuit voltage of 805 mV in solar cell applications