Synergistic Effect through the Introduction of Inorganic Zinc Halides at the Interface of TiO 2 and Sb 2 S 3 for High-Performance Sb 2 S 3 Planar Thin-Film Solar Cells

Jian Han,Xingyu Pu,Hui Zhou,Qi Cao,Shuangjie Wang,Ziwei He,Bingyu Gao,Tongtong Li,Junsong Zhao,Xuanhua Li

DOI: https://doi.org/10.1021/acsami.0c11550

2020-08-03

Abstract:The competition between charge recombination and extraction principally affects the fill factor (FF) and power conversion efficiency (PCE) of planar thin-film solar cells. In Sb₂S₃ thin-film solar cells, the electrocharge recombination and extraction n transport layer (ETL) plays a significant role in electron extraction and determination of Sb₂S₃ film absorber quality. Herein, a TiO₂ ETL is strategically modified using an inorganic salt zinc halide (i.e., ZnCl₂, ZnBr₂, ZnI₂), which simultaneously improves the electronic properties of TiO₂ and promotes the growth of Sb₂S₃ films with larger grain size and higher crystallinity. The experimental results and theoretical calculations further reveal that the zinc halide can interact with TiO₂ and simultaneously bond strongly with the upper Sb₂S₃ film, which creates a unique pathway for electron transfer, passivates the trap states, and alleviates the recombination losses effectively. As a result, an average PCE of 6.87 ± 0.11% and the highest PCE of 7.08% have been attained with an improved FF from 51.22 to 61.61% after ZnCl₂ introduction. Additionally, introduction of ZnCl₂ helps the unencapsulated devices to maintain 93% of their original performance after 2400 h of storage in a nitrogen-filled glovebox. This work develops an effective route for the optimization of ETLs and defect healing using simple and low-cost inorganic salts.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c11550?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c11550</a>.Device structure, modification process, and the morphology of the ETLs; XPS and UPS characterizations; dark <i>J–V</i> measurement of electron-only devices; side and top views of the most stable structures of zinc halide–TiO₂; side and top views of isosurfaces for charge density differences; schematic diagram of ZnCl₂ function between the TiO₂ and Sb₂S₃; SEM-EDS mapping images of the ZnCl₂–TiO₂ film; conductivity measurements of different TiO₂; SEM morphologies and XRD patterns of Sb₂S₃ films deposited on different substrates; EBSD map of the ZnCl₂–TiO₂-based Sb₂S₃ film; contact angles of Sb₂S₃ precursor solution on different TiO₂; side and top views of the most stable structures of zinc halide–Sb₂S₃; photovoltaic characteristics of the Sb₂S₃ devices; electronic characteristics of the Sb₂S₃ devices; <i>V</i>_OC dependence on light intensity; schematic band alignment between Sb₂S₃ and different ETLs; 1/<i>C</i>² versus <i>V</i> curves; Nyquist plots of Sb₂S₃ devices; TPV decay characteristics; the stabilities of Sb₂S₃ devices stored in a nitrogen-filled glovebox at room temperature in the dark without any encapsulation (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c11550/suppl_file/am0c11550_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology