Abstract:Heterogeneous integration of β-Ga2O3 on highly thermal conductive SiC substrate by the ion-cutting technique is an effective solution to break the heat-dissipation bottleneck of β-Ga2O3 power electronics. In order to acquire high-quality β-Ga2O3 materials on SiC substrates, it is essential to understand the influence of the ion-cutting process on the current transport in β-Ga2O3 devices and to further optimize the electrical characteristics of the exfoliated β-Ga2O3 materials. In this work, the high quality of β-Ga2O3/SiC structure was constructed by the ion-cutting process, in which an amorphous layer of only 1.2 nm was formed between β-Ga2O3 and SiC. The current transport characteristics of Au/Pt/Ni/β-Ga2O3 Schottky barrier diodes (SBDs) on SiC were systematically investigated. β-Ga2O3 SBDs with a high rectification ratio of 108 were realized on a heterogeneous β-Ga2O3 on-SiC (GaOSiC) substrate. The net carrier concentration of the β-Ga2O3 thin film for GaOSiC substrate was down to about 8% leading to a significantly higher resistivity, compared to the β-Ga2O3 donor wafer, which is attributed to the increase in acceptor-type implantation defects during the ion-cutting process. Furthermore, temperature-dependent current–voltage characteristics suggested that the reverse leakage current was limited by the thermionic emission at a low electric field, while at a high electric field, it was dominated by the Poole–Frenkel emission from E3 deep donors caused by the implantation-induced GaO antisite defects. These results would advance the development of β-Ga2O3 power devices on high thermal conductivity substrate fabricated by ion-cutting technique.

Forward Current Conduction Mechanism of Mechanically Exfoliated Β-Ga2o3/gan Pn Heterojunction Diode

A Novel PN junction between Mechanically Exfoliated \b{eta}-Ga2O3 and p-GaN

Demonstration of N-Ga2o3/p-gan Diodes by Wet-Etching Lift-Off and Transfer-Print Technique

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Forward leakage currents in GaN p-i-n diodes

-Ga2o3 Hetero-Junction Barrier Schottky Diode with Reverse Leakage Current Modulation and BV2/Ron,sp Value of 0.93 GW/cm2

Β-Ga2o3 Vertical Heterojunction Barrier Schottky Diodes Terminated with P-Nio Field Limiting Rings

Over 1.8 GW/cm(2) beveled-mesa NiO/beta-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability

Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3

Current transport mechanisms of metal/TiO2/ β -Ga2O3 diodes

Traps Inhomogeneity Induced Conversion of Shockley–Read–Hall Recombination in NiO/β-Ga2O3 P+–n Heterojunction Diodes

Current transport mechanism of lateral Schottky barrier diodes on β -Ga2O3/SiC structure with atomic level interface

Wafer-Bonded P-N Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN

Transport mechanism investigation of β-Ga 2 O 3 based fin-shape heterojunction PN diodes

3.3 kV-class NiO/ β -Ga2O3 heterojunction diode and its off-state leakage mechanism

2Kv Low Leakage Vertical NiO/β-Ga2O3 Hetero-Junction Diode and Its Thermal/Electrical Stability

Microstructure Evolution and Electrical Behaviors for High-Performance Cu2O/Zr-Doped β-Ga2O3 Heterojunction Diodes

Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting

Carrier transport in LPCVD grown Ge-doped β -Ga2O3/4H-SiC isotype heterojunction

Trap-mediated Bipolar Charge Transport in NiO/Ga2O3 P+-N Heterojunction Power Diodes