Current transport mechanisms of metal/TiO2/ β -Ga2O3 diodes

Nolan S. Hendricks,Ahmad E. Islam,Elizabeth A. Sowers,Jeremiah Williams,Daniel M. Dryden,Kyle J. Liddy,Weisong Wang,James S. Speck,Andrew J. Green

DOI: https://doi.org/10.1063/5.0188432

IF: 2.877

2024-03-04

Journal of Applied Physics

Abstract:β-Ga2O3 is of great interest for power electronic devices with efficiency beyond current generation Si, 4H-SiC, and GaN devices due to its large breakdown electric field of ∼8 MV/cm. However, taking advantage of this large field strength in power diodes requires device engineering to reduce leakage current that arises at high electric fields. In this work, we elucidate the current transport mechanisms of metal/TiO2/β-Ga2O3 diodes, showing that thermionic emission is an excellent descriptor of current in forward and reverse bias. It is shown that tunneling current is greatly suppressed, and consequently, that the diodes with the TiO2 interlayer can block orders of magnitude more current than Schottky barrier diodes with the same barrier heights. Finally, a 1200 V diode structure is designed based on the derived transport models, and calculated on- and off-state current characteristics closely align with those of state-of-the-art 4H-SiC commercial devices, indicating that this diode structure is ready to enable the realization of β-Ga2O3 power diodes.

physics, applied

What problem does this paper attempt to address?

The problem this paper attempts to address is: how to reduce leakage current under high electric fields by optimizing the design of metal/TiO2/β-Ga2O3 diodes, thereby enhancing their potential application as efficient power electronic devices.

Specifically, the paper focuses on the following aspects:

1. **Leakage Current Issue under High Electric Fields**:
- β-Ga2O3 is considered an ideal material for next-generation high-voltage power electronic devices due to its high breakdown field (approximately 8 MV/cm). However, traditional Schottky barrier diodes (SBDs) exhibit severe leakage current issues under high electric fields, which limits their performance.
- The paper explores how introducing a thin TiO2 layer can effectively reduce this leakage current, allowing β-Ga2O3 diodes to maintain good performance under high electric fields.

2. **Study of Current Transport Mechanisms**:
- The paper conducts a detailed study of the current transport mechanisms in metal/TiO2/β-Ga2O3 diodes under forward and reverse bias. The study shows that thermionic emission is the primary mechanism describing current transport in these diodes.
- Through temperature-dependent current density-voltage (J-V-T) characteristic analysis, the paper further validates this conclusion and explores the impact of tunneling current under different conditions.

3. **Design of High-Performance 1200V Diodes**:
- Based on the above research results, the paper designs a 1200V β-Ga2O3 MDS diode structure. By optimizing the thickness and barrier height of the TiO2 layer, this design achieves on-state and off-state characteristics comparable to the current state-of-the-art 4H-SiC commercial diodes.
- This design demonstrates the potential of the MDS structure in achieving efficient power rectifiers, particularly in significantly reducing leakage current without increasing the barrier height or adopting complex RESURF structures.

In summary, this paper aims to address the leakage current issue under high electric fields by deeply studying and optimizing the design of metal/TiO2/β-Ga2O3 diodes, thereby promoting the application of β-Ga2O3 in efficient power electronic devices.