The Dependence of Interfacial Properties on the Layer Number in 1T′/2h-Mos2 Van Der Waals Heterostructures

Xiaoxing Chen,Zixiang Liu,Aijian Huang,Zhiguo Wang
DOI: https://doi.org/10.1016/j.physleta.2020.126747
IF: 2.707
2020-01-01
Physics Letters A
Abstract:Metallic 1T'-MoS2 monolayers are predicted to be efficient hole injection contacts for nanoelectronic devices composed of 2H-MoS2 monolayers. The layer number can affect the physical properties of two-dimensional materials. In this paper, the dependence of the interfacial properties of 1T'/2H-MoS2 van der Waals (vdW) heterojunctions on the layer number was studied using density functional theory. The calculation results show that 1T'-MoS2 forms p-type contacts with 2H-MoS2, and the p-type Schottky barrier height (SBH) is between -75 and 30 meV and depends on the number of 1T'-/2H-MoS2 layers. Thus, the efficiency of 1T'-MoS2 as a hole injection contact for 2H-MoS2 can be tuned by the layer number. This work provides a method for tuning the contact-resistance in nanodevices composed of 2H-MoS2. (C) 2020 Elsevier B.V. All rights reserved.
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