Abstract:In the present work, phase transition mechanisms from semiconducting 2H phase to metallic IT phase in MoS2 nanosheets were studied using density functional theory (DFT) method. Various 2H -> IT phase transition mechanisms that consist of nucleation and propagation steps, which were simulated by collective rotational and rotational/translational movements, single atom translational movement, and the gliding movement of one row for sulfur (5) atoms, on both the basal plane and Mo- and S-edges with different S coverages were investigated. On the perfect basal plane, the IT phase nucleation is unlikely due to the extremely high barrier of 2.25 eV/atom, whereas the presence of defective S vacancies on the basal plane dramatically facilitate the IT phase nucleation and propagation around the defective sites by the collective rotational movement of three S atoms. On the 2H phase basal plane with two S vacancies, the kinetic barriers for the T phase nucleation are as low as of 0.66-0.77 eV/atom. Like the promoting effect of S vacancies on the phase transition over the basal plane, DFT results suggest that the S coverage on the Mo- and S-edges will affect the 1T phase nucleation and propagation. The 1T phase nucleation starting with the translational movement of single S atom on the bare Mo-edge and the gliding movement of an entire row of S atoms on the S-edge with 50% S coverage are kinetically favorable. While the 1T phase formation at the Mo-edge with 50% S coverage and the S-edge with 100% S coverage are unlikely. The present work not only confirms the important role of S vacancies/coverages in the 2H-1T phase transition but also provides new insight into how and where the 2H-1T phase transition occurs at the atomic level, which also sheds light on the general phase transition mechanism for two-dimensional transition metal dichalcogenide materials.

2H → 1T′ phase transformation in Janus monolayer MoSSe and MoSTe: an efficient hole injection contact for 2H-MoS2

Controlled 2H/1T phase transition in MoS<sub>2</sub> monolayers by a strong interface with M<sub>2</sub>C MXenes: a computational study

Charge Doping Induced Reversible Multistep Structural Phase Transitions and Electromechanical Actuation in Two-Dimensional 1T'-Mos2.

Reversible H-T′ Phase Transition in Monolayer Molybdenum Disulfide Via Electron Beam Assisted Solid State Lithiation/delithiation

Local Engineering of Topological Phase in Monolayer MoS 2

Semiconductor-semimetal Transition of MoTe2 Monolayer Modulated by Charge-Injection and Strain Engineering

2H/1T Phase Transition of Multilayer MoS2 by Electrochemical Incorporation of S Vacancies

Metastable Phase Control of Two-Dimensional Transition Metal Dichalcogenides on Metal Substrates

Local engineering of topological phase in monolayer MoS2

Phase-selective Synthesis of 1T′ MoS2 Monolayers and Hetero-Phase Bilayers

First Principles Studies on the Electronic and Contact Properties of Single Layer 2H-Mos2/1t-mx2 Heterojunctions

High Phase Purity of Large-Sized 1T'-Mos2 Monolayers with 2D Superconductivity.

Phase‐Controlled Growth of 1T′‐MoS2 Nanoribbons on 1H‐MoS2 Nanosheets

Distorted Janus Transition Metal Dichalcogenides: Stable Two-Dimensional Materials with Sizable Band Gap and Ultrahigh Carrier Mobility

Layer-dependent Chemically Induced Phase Transition of Two-dimensional MoS2.

Mechanisms of Semiconducting 2H to Metallic 1T Phase Transition in Two-dimensional MoS2 Nanosheets

Modulating Peierls distortion of 1T_prime MoS2 via charge doping: a new charge density wave phase, reversible phase transition, and excellent electromechanical properties

A General Strategy to Stabilize the 1T-MoS2 by Using MXene Heterostructures and Unlock Its Hydrogen Evolution Reaction Capabilities

Hole- and Electron-Injection Driven Phase Transitions in Transition Metal Dichalcogenides and Beyond: A Unified Understanding

1T Phase As an Efficient Hole Injection Layer to TMDs Transistors: a Universal Approach to Achieve P-Type Contacts

Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy.