Preparation of FTO/SiO2 Composite Thin Films and the Sheet Resistance

Li Changhong,Zhao Xianhui,Liang Song,Wang Hai,Liu Ling,Huang Zilin
2016-01-01
Rare Metal Materials and Engineering
Abstract:FTO/SiO2 composite thin films were prepared by a sol-gel method. X-ray Diffractometer (XRD), scanning electron microscopy (SEM), ubbelohde viscometer and surface four-point probe were used to study some factors of sol and characteristics of thin films. The SiO2 sol which is suitable to make FTO/SiO2 composite thin films is obtained. The optimal parameters are that the volume ratio of EtOH/TEOS/H2O is 4:2:1 and pH is 3. The heating rate largely influences the crack of thin films. When the heating rate is 0.25 degrees C/min, the thin film is good. Doping F improves the electrical conductivity of FTO/SiO2 composite thin films significantly. The resistance decreases sharply with the increase of doping F concentration. The best F doping concentration is 5 mol%. The electrical conductivity increases with the rise of heat treatment temperature when it is below 500 degrees C. The electrical conductivity increases with the increase of film thickness. When F doping concentration is 5mol%, film thickness is 1+3 layers of sol and when the heat treatment temperature is 500 degrees C, the sheet resistance of FTO/SiO2 thin films is 270 Omega/square.
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