Abstract:ZnO:Al thin films were prepared by the sol-gel dip-coating process on soda-lime glass substrates.The physical and chemical changes of the precursors during thermal treatment were analyzed by the thermogravimetry-differential scanning calo-rimetry curves and the crystalline quality was characterized by X-ray diffraction.The results show that the crystallization process of ZnO:Al thin films is comprised of two stages:the primary nucleation and crystal growth stage,occurring at～300 ℃ and the per-fection of crystallization at～500 ℃.In the range of 413-523 ℃,the films are composed of a hybrid of ZnO:Al and residual carbon.At～530 ℃,the residual carbon is oxidized completely and ZnO:Al begins to crystallize continuously,which produces film with perfect crystallization quality.Hence,the optimal preheating and post-heat treatment temperatures of the film are 420 and 530 ℃,respectively.According to scanning electron microscopy observation,the post-heated film at 530 ℃ has a homogenous dense texture,and has the minimum sheet resistance of 140 ?/□ after annealing at 400 ℃ in vacuum.The visible optical transmittance of all the films is greater than 90%.In addition,the annealing treatment in vacuum is greatly beneficial to the electrical conductivity.

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