Abstract:The overall performance of the multilayer resulting in a sol-gel BiFeO3 film will be primarily determined by the properties of the first layer, but this has yet to receive much attention, even though chemical and morphological defects of this layer can accumulate as the number of layers increases. Here, we perform an optical, conductive, and ferroelectric study of first layer (L1) dip-coating sol-gel BiFeO3 films using two routes that vary only in the dissolvent; the first one is based on 2-methoxyethanol (MOE), and the second one on acetic acid (AA) with some MOE (AA-MOE). Tauc plots reveal a band gap of 2.43 eV and 2.75 eV for MOE (30±5 nm thick) and AA-MOE (35±5 nm thick) films, respectively. MOE films showed a dielectric function with features at ~2.5 eV, ~3.1 eV, and ~3.9 eV, which were associated with charge-transfer transitions, but such features are absent in AA-MOE films. Advanced atomic force microscopy (AFM) techniques were used to identify the fine features or defects of the BiFeO3 films: The conductive maps show that the charge transport pathways in both film routes are controlled by nanometer defects rather than grain or grain boundary defects. Current-voltage curves reveal high conductive pathway at a lower voltage for the MOE films than for AA-MOE films. The piezoelectric coefficient for MOE films was ~20% higher than AA-MOE films. Both deposition methods yield ferroelectric films with an electromechanical strain controlled by the piezoelectric effect and minimal contribution from electrostriction. An optimization for the AA-MOE-based route in the withdrawal speed results in a significant reduction of morphological defects and a more than twofold increase in the piezoelectric coefficient. Our results broaden the understanding of optical and ferroelectric BiFeO3 films based on a chemical solution by dip-coating.

Preparation and Electric Properties of BiFeO3 Sol-Gel Process Film by Sol-Gel Process

Ferroelectric Properties of BiFeO3 Films Grown by Sol–gel Process

Electric Properties of BiFeO3 Films Deposited on LaNiO3 by Sol-Gel Process

Room Temperature Ferroelectric, Ferromagnetic and Magnetoelectric Properties of Ba-Doped Bifeo3 Thin Films

Structure and Characteristics of the BiFeO3 Fabricated by the Sol-Gel Technique

Preparation of BiFeO3 Thin Films by Chemical Solute Method

Formation of Nano-Ag/Bifeo3 Composite Thin Film with Extraordinary High Dielectric and Effective Ferromagnetic Properties

Preparation of Bi3.15Nd0.85Ti3O12 ferroelectric thin films by sol-gel method

Multiferroic BiFeO3 Thin Films Prepared Via a Simple Sol-Gel Method

Electric and magnetic properties of multiferroic (BiFeO<sub>3</sub>)<sub>1−<i>x</i></sub>–(PbTiO<sub>3</sub>)<sub><i>x</i></sub> films prepared by the sol–gel process

Preparation and Characterization of BiFeO3 Powders by Sol-gel Method

Optical, conductive, and ferroelectric properties of the first layer of dip-coated BiFeO 3 films from methoxyethanol and acetic acid-based chemical dissolvents

Ferroelectricity of the BiFeO3 prepared by the chemical solution deposition method

Outstanding Ferroelectricity in Sol-Gel-Derived Polycrystalline BiFeO3 Films within a Wide Thickness Range

Structural and Ferroic Properties of Zr-doped BiFeO3Thin Films

Structural and Electrical Properties of Sol–gel-Derived Al-doped Bismuth Ferrite Thin Films

Outstanding Ferroelectricity in Sol–Gel-Derived Polycrystalline BiFeO 3 Films within a Wide Thickness Range

The Microstructure, Electric, Optical and Photovoltaic Properties of BiFeO3 Thin Films Prepared by Low Temperature Sol⁻Gel Method

Dielectric and optical properties of BiFeO 3-(Na 0.5Bi 0.5)TiO 3 thin films deposited on Si substrate using LaNiO 3 as buffer layer for photovoltaic devices

Structural and Magnetic Properties of Bismuth Ferrite Nanopowders Prepared Via Sol-Gel Method

Enhanced ferroelectric properties of (Zn, Ti) equivalent co-doped BiFeO3 films prepared via the sol-gel method