Abstract:BiFeO 3 (BFO) has received considerable attention as a lead-free ferroelectric film due to its large theoretical remnant polarization. However, BFO suffers from a large leakage current, resulting in poor ferroelectric properties. Herein, the sol–gel method was used to deposit a series of BFO-based thin films on fluorine-doped tin oxide substrates, and the effects of the substitution of the elements Co, Cu, Mn ( B -site) and Sm, Eu, La ( A -site) on the crystal structure, ferroelectricity, and leakage current of the BFO-based thin films were investigated. Results confirmed that lattice distortion by X-ray diffraction can be attributed to the substitution of individual elements in the BFO-based films. Sm and Eu substitutions contribute to the lattice distortion in a pseudo-cubic structure, while La is biased toward pseudo-tetragonal. Piezoelectric force microscopy confirmed that reversible switching of ferroelectric domains by nearly 180° can be realized through the prepared films. The ferroelectric hysteresis loops showed that the order for the polarization contribution is as follows: Cu > Co > Mn ( B -site), Sm > La > Eu ( A -site). The current density voltage curves indicated that the order for leakage contribution is as follows: Mn < Cu < Co ( B -site), La < Eu < Sm ( A -site). Scanning electron microscopy showed that the introduction of Cu elements facilitates the formation of dense grains, and the grain size distribution statistics proved that La element promotes the reduction of grain size, leading to the increase of grain boundaries and the reduction of leakage. Finally, a Bi 0.985 Sm 0.045 La 0.03 Fe 0.96 Co 0.02 Cu 0.02 O 3 (SmLa-CoCu) thin film with a qualitative leap in the remnant polarization from 25.5 (Bi 0.985 Sm 0.075 FeO 3 ) to 98.8 μC/cm 2 (SmLa-CoCu) was prepared through the synergistic action of Sm, La, Co, and Cu elements. The leakage current is also drastically reduced from 160 to 8.4 mA/cm 2 at a field strength of 150 kV/cm. Thus, based on the increasing entropy strategy of chemical engineering, this study focuses on enhancing ferroelectricity and decreasing leakage current, providing a promising path for the advancement of ferroelectric devices.

Outstanding Ferroelectricity in Sol–Gel-Derived Polycrystalline BiFeO 3 Films within a Wide Thickness Range

Outstanding Ferroelectricity in Sol-Gel-Derived Polycrystalline BiFeO3 Films within a Wide Thickness Range

Great enhancement of ferroelectric properties of Al2O3-modified BiFeO3 thin films obtained by sol-gel method

Interface-layer-assisted reliable ferroelectricity in BiFeO 3 thin films by chemical solution deposition

Tuning ferroelectric domains and polarization properties of flexible BiFeO 3 thin films by phase transition engineering

Structural, dielectric and ferroelectric properties of BiFeO3–BiInO3 solid solution thin films obtained by sol-gel method

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Enhanced ferroelectric and improved leakage of BFO-based thin films through increasing entropy strategy

Effective strategy for optimizing the leakage current and ferroelectric polarization characteristics of BiFeO3_PVDF-TrFE nanocomposite films

Formation of Nano-Ag/Bifeo3 Composite Thin Film with Extraordinary High Dielectric and Effective Ferromagnetic Properties

Rhombohedral BiFeO3 Thick Films Integrated on Si with a Giant Electric Polarization and Prominent Piezoelectricity

Reliable ferroelectricity in sol–gel‐derived BiFeO3 thin films below 200 nm

Structural properties and electrical characteristics of BiFeO3 thin films with RE2O3 buffer layers

Ferroelectric Domains and Phase Transition of Sol-Gel Processed Epitaxial Sm-doped BiFeO3 (001) Thin Films

Multiferroic BiFeO3 Thin Films Prepared Via a Simple Sol-Gel Method

Enhanced ferroelectric properties of (Zn, Ti) equivalent co-doped BiFeO3 films prepared via the sol-gel method

Synthesis And Ferroelectric Properties Of Bifeo3 Thin Films Grown By Sputtering

Structural and Ferroic Properties of Zr-doped BiFeO3Thin Films

Thickness-dependent ferroelectric and magnetic properties of BiFeO_3 films

(001)‐oriented BiFeO 3 films integrated on Si with enhanced electrical performances

Growth and Physical Properties of BiFeO3 Thin Films Directly on Si Substrate