Abstract:The static random-access memory (SRAM) physical unclonable function (PUF) uses the power-up states of stored values to derive the identification code. Its lightweight circuit design makes it suitable for power-sensitive satellites. However, the SRAM PUF is significantly affected by high-energy particles and cosmic rays in space, which causes incorrect output of identity authentication codes and further leading to a degradation in reliability. Recently, the main research works are concerned about the impact of cosmic rays induced total ionizing dose effects on the SRAM PUF, and few reports discuss the high-energy particles induced single event effects on the SRAM PUF. This paper presents the reliability results of planar and FinFET-based SRAM PUFs after high-energy heavy ion experiments. Experimental results indicate that 3%–10% of the SRAM PUF bits change from their original power-on states, which demonstrate that ion-induced microdose effects degrade the reliability of SRAM PUFs. In addition, the three-dimensional technology computer-aided design simulation tool is used to analyze the physical mechanisms of the experimental phenomena. Simulation results show that the heavy ion-induced microdose effect ionizes and produces trapped charges at the silicon/insulation interface, which causes a slight change in transistor leakage current or a slight drift in threshold voltage. The physical mechanisms lead to an off-state current mismatch in the SRAM cell and finally affect the stored values after power-on.

Effectiveness and Failure Modes of Error Correcting Code in Industrial 65 Nm CMOS SRAMs Exposed to Heavy Ions

Fault-Tolerant Design of Memory Module for Pica-satellite On-Board Computer

Heavy Ion Testing and Numerical Modeling of Single EventMultiple-Cell Upsets on 90 nm Bulk CMOS SRAM

Implementation and Verification of Different Ecc Mitigation Designs for Brams in Flash-Based Fpgas

A Hybrid Technique Based on ECC and Hardened Cells for Tolerating Random Multiple-Bit Upsets in SRAM Arrays

The Influence of Ion Track Characteristics on Single-Event Upsets and Multiple-Cell Upsets in Nanometer SRAM

Experimental Studies of Single-Event Effects Induced by Heavy Ions

Single-Event Upset Prediction in SRAMs Account for On-Transistor Sensitive Volume

Heavy Ion Induced SEU Sensitivity Evaluation of 3D Integrated SRAMs

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

Experimental Study on Heavy Ion Single Event Effects in SOI SRAMs

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 Nm FDSOI SRAMs

Single-Event Upsets in SRAMs with Scaling Technology Nodes Induced by Terrestrial, Nuclear Reactor, and Monoenergetic Neutrons

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

Design and Verification of Multiple SEU Mitigated Circuits on SRAM-based FPGA System

Radiation Hardened 12T SRAM with Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

Heavy ion induced single event effects in semiconductor device1This subject was supported by the Chinese Academy of Sciences.1

Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions

SEU ground and flight data in static random access memories

Testing of a new type SEU-tolerant SRAM