Perovskite Transistors Clean Up Their Act

Huihui Zhu,Ao Liu,Yong-Young Noh

DOI: https://doi.org/10.1038/s41928-020-00470-z

IF: 33.255

2020-01-01

Nature Electronics

Abstract:cleaning–healing–cleaning method can effectively eliminate ionic defects at the surface of perovskite films, resulting in reliable and high-performance perovskite transistors.

What problem does this paper attempt to address?

A solvent-based surface cleaning and passivation technique for suppressing ionic defects in high-mobility perovskite field-effect transistors

Xiao-Jian She,Chen Chen,Giorgio Divitini,Baodan Zhao,Yang Li,Junzhan Wang,Jordi Ferrer Orri,Linsong Cui,Weidong Xu,Jun Peng,Shuo Wang,Aditya Sadhanala,Henning Sirringhaus

DOI: https://doi.org/10.1038/s41928-020-00486-5

IF: 33.255

2020-10-19

Nature Electronics

Abstract:Organometal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. However, the performance of these transistors is currently limited by the migration of ionic surface defects. Here, we show that a surface cleaning and passivation technique, which is based on a sequence of three solution-based steps, can reduce the concentration of ionic surface defects in halide-based perovskites without perturbing the crystal lattice. The approach consists of an initial cleaning step using a polar/nonpolar solvent, a healing step to remove surface organic halide vacancies and a second cleaning step. The surface treatment is shown to restore clean, near hysteresis-free transistor operation, even if the perovskite films are formed under non-optimized conditions, and can improve room-temperature FET mobility by two to three orders of magnitude compared to untreated films. Our methylammonium lead iodide (MAPbI3) FETs exhibit high n- and p-type mobilities of 3.0 cm2 V−1 s−1 and 1.8 cm2 V−1 s−1, respectively, at 300 K, and higher values (9.2 cm2 V−1 s−1; n-type) at 80 K. We also show that the approach can be used to transform PbI2 single crystals into high-quality, two-dimensional perovskite single crystals. A three-stage solution-based cleaning technique can increase the room-temperature mobility and reduce the hysteresis of organometal halide perovskite transistors by decreasing the surface defects in the perovskite films.

engineering, electrical & electronic
Metal halide perovskites: Perovskite transistors clean up their act (October, 10.1038/s41928-020-00470-z, 2020)

Huihui Zhu,Ao Liu,Yong-Young Noh

DOI: https://doi.org/10.1038/s41928-020-00503-7

IF: 33.255

2020-01-01

Nature Electronics

Abstract:An amendment to this paper has been published and can be accessed via a link at the top of the paper.
High-performance hysteresis-free perovskite transistors through anion engineering

Huihui Zhu,Ao Liu,Kyu In Shim,Haksoon Jung,Taoyu Zou,Youjin Reo,Hyunjun Kim,Jeong Woo Han,Yimu Chen,Hye Yong Chu,Jun Hyung Lim,Hyung-Jun Kim,Sai Bai,Yong-Young Noh

DOI: https://doi.org/10.1038/s41467-022-29434-x

2022-04-01

Abstract:Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI3) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm2 V-1 s-1, current on/off ratios exceeding 107, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.
High‐Performance and Reliable Lead‐Free Layered‐Perovskite Transistors

Huihui Zhu,Ao Liu,Kyu In Shim,Jisu Hong,Jeong Woo Han,Yong-Young Noh

DOI: https://doi.org/10.1002/adma.202002717

IF: 29.4

2020-01-01

Advanced Materials

Abstract:Perovskites have been intensively investigated for their use in solar cells and light-emitting diodes. However, research on their applications in thin-film transistors (TFTs) has drawn less attention despite their high intrinsic charge carrier mobility. In this study, the universal approaches for high-performance and reliable p-channel lead-free phenethylammonium tin iodide TFTs are reported. These include self-passivation for grain boundary by excess phenethylammonium iodide, grain crystallization control by adduct, and iodide vacancy passivation through oxygen treatment. It is found that the grain boundary passivation can increase TFT reproducibility and reliability, and the grain size enlargement can hike the TFT performance, thus, enabling the first perovskite-based complementary inverter demonstration with n-channel indium gallium zinc oxide TFTs. The inverter exhibits a high gain over 30 with an excellent noise margin. This work aims to provide widely applicable and repeatable methods to make the gate more open for intensive efforts toward high-performance printed perovskite TFTs.
Perovskite Single Crystals with Self‐Cleaning Surface for Efficient Photovoltaics

Nianqiao Liu,Ning Li,Changke Jiang,Mingxuan Lv,Jinming Wu,Zhaolai Chen

DOI: https://doi.org/10.1002/anie.202314089

2024-01-05

Angewandte Chemie International Edition

Abstract:Metal halide perovskite single crystals are promising for diverse optoelectronic applications. As a universal issue of solution-grown perovskite single crystals, surface contamination causes adverse effect on material properties and device performance. Herein, learning from the self-cleaning effect of lotus leaf, we address the surface contamination issue by introducing an amphiphilic long-chain organic amine into the perovskite crystal growth solution. Self-assembly of CTAC provides a hydrophobic crystal surface, inducing spontaneous removal of residual growth solution, which results in clean surface and better optoelectronic properties of perovskite single crystals. An impressive efficiency of 23.4% is obtained, setting a new record for FAxMA1-xPbI3 single-crystal perovskite solar cells (PSCs). Moreover, our strategy also applies to perovskite single crystals with different morphology and composition, which may contribute to improvement of other single-crystal perovskite optoelectronic devices.

chemistry, multidisciplinary
A Single‐Step Cleaning Process for Simultaneous Removal of Surface Impurities and Passivation of Sub‐Surface Defects in Perovskite Solar Cells

Wanxian Cai,Yudi Wang,Wenzhe Li,Yanfeng Yin,Jing Liu,Wanqing Cai,Shuhong Wang,Jingya Guo,Shuai Chang,Shukui Li,Xiuyun Wang,Yantao Shi

DOI: https://doi.org/10.1002/aenm.202304521

IF: 27.8

2024-03-27

Advanced Energy Materials

Abstract:A novel concept is proposed to achieve both precise removal of surface impurities and effective passivation of sub‐surface defects in a single step, utilizing a functional polymer‐based cleaning strategy. This synergistic effect has significantly boosted power conversion efficiency up to 25.51% by drastically reducing non‐radiative recombination and improved operational stability by eliminating ion migration pathways. Perovskite solar cells (PSCs) suffer from the presence of non‐active and metastable species on the surface of solution‐processed perovskite films, and their adverse effects on charge extraction and long‐term stability cannot be fully addressed by conventional surface passivation strategies. In this study, a novel concept is proposed to achieve both precise removal of surface impurities and effective passivation of sub‐surface defects in a single step, utilizing a functional polymer‐based cleaning strategy. The moderate intermolecular force provided by the functional polymer and their inherent robust interchain interactions enable effective surface cleaning without disturbing the active crystal lattice. Following surface cleaning, the electron‐donating groups (C═O) in the polymer passivate the uncoordinated Pb2+ defects at the sub‐surface level. This synergistic effect of surface cleaning and sub‐surface defect passivation leads to a drastic reduction in interfacial non‐radiative recombination, elimination of ion migration pathways, and prevention of triggers for photodegradation. As a result, the power conversion efficiency (PCE) significantly improved from 22.84% to 25.51%, accompanied by a remarkable enhancement in operational stability. Moreover, the operability and effectiveness of this approach make it highly suitable for scaling up perovskite solar modules in the future.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Recycling Single‐Crystal Perovskite Solar Cells With Improved Efficiency and Stability

Nianqiao Liu,Ning Li,Changke Jiang,Delong Han,Jitao Dai,Yawei Niu,Yunjie Dou,Shangshang Chen,Yimu Chen,Zhaolai Chen,Xutang Tao

DOI: https://doi.org/10.1002/adfm.202410631

IF: 19

2024-09-05

Advanced Functional Materials

Abstract:The degraded single‐crystal perovskite solar cells can be recycled with enhanced efficiency and stability by an optimized polishing engineering, demonstrating efficiency decay stems from surface‐related degradation while the role of bulk and buried interface is negligible, which strengthens the understanding of the degradation mechanism of single‐crystal solar cells and may help to overcome stability issue of perovskite solar cells. Metal halide perovskite single crystals are promising for photovoltaic applications due to their outstanding properties. However, the high surface trap density causes severe nonradiative recombination and ion migration, hindering device performance and stability. Herein, mitigation of the deficient crystal surface is reported by optimized polishing engineering, resulting in stoichiometric lead‐iodine ratio with reduced iodide ion vacancies, increased ion migration activation energy, and suppressed nonradiative recombination. As a result, Cs0.05FA0.95PbI3 (FA = formamidinium) devices exhibit an impressive efficiency of 23.1%, which is one of the highest values for single‐crystal perovskite solar cells (PSCs). Moreover, multiple recycling of the degraded single‐crystal PSCs with higher efficiency and stability is achieved by removing the deteriorated surface, validating crystal surface dominates device degradation while the role of bulk and buried interface is negligible, which is different from polycrystalline devices. The T85 lifetime (remain 85% of initial efficiency) of Cs0.05FA0.95PbI3 devices increases to 1150 h after the recycling process, which is much better than that of previously reported single‐crystal PSCs. Since deficient crystal surface and ion migration are universal issues of perovskite materials, this work will promote the development of stable single‐crystal PSCs and other optoelectronic devices, such as X‐ray detectors, light‐emitting diodes, etc.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Chemical Polishing of Perovskite Surface Enhances Photovoltaic Performances

Lichen Zhao,Qiuyang Li,Cheng-Hung Hou,Shunde Li,Xiaoyu Yang,Jiang Wu,Siyang Zhang,Qin Hu,Yanju Wang,Yuzhuo Zhang,Yufeng Jiang,Shuang Jia,Jing-Jong Shyue,Thomas P. Russell,Qihuang Gong,Xiaoyong Hu,Rui Zhu

DOI: https://doi.org/10.1021/jacs.1c10842

IF: 15

2022-01-18

Journal of the American Chemical Society

Abstract:The benefits of excess PbI2 on perovskite crystal nucleation and growth are countered by the photoinstability of interfacial PbI2 in perovskite solar cells (PSCs). Here we report a simple chemical polishing strategy to rip PbI2 crystals off the perovskite surface to decouple these two opposing effects. The chemical polishing results in a favorable perovskite surface exhibiting enhanced luminescence, prolonged carrier lifetimes, suppressed ion migration, and better energy level alignment. These desired benefits translate into increased photovoltages and fill factors, leading to high-performance mesostructured formamidinium lead iodide-based PSCs with a champion efficiency of 24.50%. As the interfacial ion migration paths and photodegradation triggers, dominated by PbI2 crystals, were eliminated, the hysteresis of the PSCs was suppressed and the device stability under illumination or humidity stress was significantly improved. Moreover, this new surface polishing strategy can be universally applicable to other typical perovskite compositions.

chemistry, multidisciplinary
A Lewis Base and Boundary Passivation Bifunctional Additive for High Performance Lead-Free Layered-Perovskite Transistors and Phototransistors

H. Zhu,A. Liu,T. Zou,H. Jung,S. Heo,Y. -y. Noh

DOI: https://doi.org/10.1016/j.mtener.2021.100722

IF: 9.257

2021-01-01

Materials Today Energy

Abstract:Halide perovskite semiconductors exhibit a low intrinsic effective mass of charge carriers; however, their development of transistors is lagging far behind the development of photovoltaic and light-emitting diodes. In this study, we report highly reproducible phenethylammonium tin iodide transistors with mobility over 4 cm(2) V-1 s(-1) and an on/off ratio over 105 using a simple method of adding a bifunctional additive, urea, into the precursor. This non-volatile Lewis base can modify the crystallization speed and passivate grain-boundary defects, enabling a significant improvement in the transistor characteristics over pristine devices without urea. Furthermore, we demonstrate unprecedented phototransistor characteristics, with detectivity exceeding 10(17) Jones when the improved perovskite transistors are used. It is expected that more intensive efforts can be attracted to advance the development of high-performance perovskite (photo)transistors. (c) 2021 Elsevier Ltd. All rights reserved.
High‐Quality Subsurface Construction of Perovskite Film for Efficient and Stable Solar Cells

Qinhui Bao,Chuwu Xing,Miao He,Zhiwei Nie,Rihua Wang,Chunsheng Wan,Tianjin Zhang,Duofa Wang

DOI: https://doi.org/10.1002/smll.202406386

IF: 13.3

2024-11-18

Small

Abstract:The subsurface of perovskite (PVK) films produced via the solution method exhibits impurities and a high concentration of defects. This paper examines the limitations of conventional post‐treatment strategies for regulating the subsurface of PVK films and introduces an innovative pre‐treatment strategy aimed at improving the quality of the film subsurface. The subsurface of perovskite (PVK) triggers non‐radiative recombination and initiates film degradation due to the impurities and defects. This study investigates the limitations of the conventional surface post‐treatment and proposes an innovative pre‐treatment strategy to achieve complete impurity elimination and defect passivation of the subsurface. The considerable activity of unannealed PVK films provides a sufficient basis for effective subsurface modification. Following the pre‐treatment, the cadmium ions (Cd2+) can occupy the lead (Pb) vacancies or substitute lead ions(Pb2+), while the introduced ionic ions (I‐) are able to fill the ionic (I) vacancies. The stronger ionic bond between Cd2+ and I− helps prevent the loss of I‐, leading to a reduction of defects in film, inhibiting non‐radiative recombination and ionic migration at the interface. This innovative strategy successfully eliminates impurities and passivates defects, resulting in a perovskite subsurface characterized by high crystallinity, low defect density, and minimal impurity. These enhancements contribute to enhanced open circuit voltage (VOC)and fill factor (FF), leading to an impressive power conversion efficiency (PCE) of 24.49%. Notably, after 1600 h of aging in ambient air, the cell retained 87% of its initial performance.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Impurity-healing interface engineering for efficient perovskite submodules

Haifei Wang,Shuojian Su,Yuetian Chen,Meng Ren,Shaowei Wang,Yao Wang,Chen Zhu,Yanfeng Miao,Chuying Ouyang,Yixin Zhao

DOI: https://doi.org/10.1038/s41586-024-08073-w

IF: 64.8

2024-09-27

Nature

Abstract:One issue that always strands the scaling-up development of perovskite photovoltaics is the significant efficiency drop when enlarging the device area, which is caused by the inhomogeneous distribution of defected sites 1-3 . In the narrow band gap formamidinium lead iodide (FAPbI 3 ), the native impurities of PbI 2 and δ -FAPbI 3 non-perovskite could induce unfavored non-radiative recombination, as well as inferior charge transport and extraction 4,5 .Here, we develop an impurity-healing interface engineering strategy to well address the issue both in small-area solar cell and large-scale submodule. With the introduction of a functional cation, 2-(1-cyclohexenyl)ethyl ammonium, two-dimensional (2D) perovskite with high mobility is rationally constructed on FAPbI 3 to horizontally cover the film surface and vertically penetrate to the grain boundaries of 3D perovskites. Such unique configuration not only comprehensively transforms the PbI 2 and δ -FAPbI 3 impurities into stable 2D perovskite and realize a uniform defect passivation, but also provides interconnecting channels for efficient carrier transport. As a result, the FAPbI 3 -based small-area (0.085 cm 2 ) solar cells achieve a champion efficiency over 25.86% with a notably high fill factor (FF) of 86.16%. More encouragingly, the fabricated submodules with the aperture area of 715.1 cm 2 obtain a certified record efficiency of 22.46% with a good FF of 81.21%, showcasing the feasibility and effectualness of the impurity-healing interface engineering for scaling-up promotion with well-preserved photovoltaic performance.

multidisciplinary sciences
Amine Salts Vapor Healing Perfected Perovskite Layers for NiOx Based p‐i‐n Solar Cells

Yu Li,Zedong Lin,Jian Wang,Rongguo Xu,Kai Zhang,Gaopeng Wang,Tongfa Liu,Huanping Zhou,Shuang Xiao,Shihe Yang

DOI: https://doi.org/10.1002/adfm.202203995

IF: 19

2022-10-12

Advanced Functional Materials

Abstract:An amine salts vapor healing strategy is applied to simultaneously passivate the defects across the entire perovskite film and obstruct the interfacial redox reaction between NiOx and perovskite, enhancing both the device performance and the performance consistency. The vapor healing strategy substantially reduces the trap density and promotes device power conversion efficiency from 17.92% to 20.48% with improved operational device stability. Post‐treatment is a widely used strategy to reduce defects in perovskite films, but has been largely limited to the solution phase. Herein, the posttreatment tool kit and develop a universal amine salts (AIXI) vapor healing strategy by taking advantage of the penetrating power of vapor and the soft‐matter characteristics of halide perovskite is expanded. In a striking demonstration, the post‐treatment of pristine perovskite layers allows simultaneous filling of the MA+ and I– vacancies, passivation of both the cation and anion defects, and healing of the films to high order and high crystallinity required for high device performance, from the surface to the bulk and all the way down to the bottom. Experiments and DFT calculations revealed that charge extraction can be enhanced and non‐radiative recombination can be reduced by regulating the energy levels and reducing the trap states via the AIXI vapor healing. Moreover, the diffusing AIXI can reach the NiOx surface to obstruct the undesirable interfacial reactions and passivate the interface defects, further reducing the open‐circuit voltage (Voc) loss. The vapor healing strategy substantially reduces the trap density from 4.76 × 1015 to 1.04 × 1015 cm–3, and promots power conversion efficiency of the champion device from 17.92% to 20.48% with superior device consistency, Voc up to 1.114 V and the operational device stability.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Synchronous Surface Reconstruction and Defect Passivation for High-Performance Inorganic Perovskite Solar Cells.

S. Liu,Yali Liu,Shiang Zhang,Hao Zhang,Xiaojing Gu,Zhiteng Wang,Xuejiao Zuo,Kui Zhao,Qingwen Tian

DOI: https://doi.org/10.1002/smll.202202690

IF: 13.3

2022-07-20

Small

Abstract:The nonradiative charge recombination caused by surface defects and inferior crystalline quality are major roadblocks to further enhancing the performance of CsPbI3- x Brx perovskite solar cells (PSCs). Theoretical calculations indicate that sodium diethyldithiocarbamate (NaDDTC), a popular bacteriostatic benign material, can initiate multiple interactions with the CsPbI3- x Brx perovskite surface to effectively passivate the defects. The experimental results reveal that the NaDDTC can indeed passivate the electron trap states and lock active sites for charge traps and water adsorption. In addition, it is found that a solid-state reaction is triggered for perovskite crystal regrowth by the NaDDTC post-treatment, which not only enlarges grain size for reducing the density of grain boundary defects but also compensates some surface defects induced by the primary film growth. Consequently, the power conversion efficiency (PCE) of the CsPbI3- x Brx PSC is increased to as high as 20.40%, with significant improvement in fill factor and open-circuit voltage (VOC ), making it one of the highest for this type of solar cell. Furthermore, the optimized devices exhibit better environmental stability. Overall, this robust synchronous strategy provides efficient surface reconstruction and defect passivation for achieving both high PCE and stable inorganic perovskite.

Medicine,Engineering,Physics,Materials Science
Organic Surface Doping for High‐Performance Perovskite Transistors

Ju‐Hyeon Kim,Chang‐Mok Oh,In‐Wook Hwang,Kiyoung Park,Kwanghee Lee

DOI: https://doi.org/10.1002/adfm.202411836

IF: 19

2024-08-31

Advanced Functional Materials

Abstract:A new p‐doping strategy is presented in which a sulfur‐containing polymer is introduced onto the top surface of a tin perovskite. The tin ions effectively interact with the sulfur ions, thereby generating hole carriers and significantly enhancing the charge transport ability. The doped tin perovskite‐based transistors exhibit a high field‐effect mobility of over 50 cm2V−1s−1 along with superior operational stability. Quasi‐2D perovskites have attracted significant attention because of their environmental robustness and superior long‐term stability compared with their 3D counterparts. However, they typically consist of a mixture of multiple quantum wells with different optoelectrical properties, which degrades the electronic properties and hinders further electronic applications. Here, to challenge this issue, a surface p‐doping strategy involving the introduction of a thiophene‐containing polymer onto the surface of quasi‐2D tin perovskites is reported. The tin ions in the perovskites effectively interact with the sulfur atoms in the thiophene moieties, thereby generating hole carriers and inducing p‐doping. The resulting doped quasi‐2D perovskites exhibit excellent surface crystallinity, lower trap density, and enhanced charge carrier transport capability along the perovskite semiconductor channels. Consequently, the doped quasi‐2D tin perovskite‐based transistors exhibit a high field‐effect mobility of 53 cm2V−1s−1 (7 cm2V−1s−1 for the control device) and an outstanding on/off ratio (>107), together with superior operational stability.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Reconstructing the Amorphous and Defective Surface for Efficient and Stable Perovskite Solar Cells

Jiangsheng Xie,Shenghe Zhao,Pengjie Hang,Tian Chen,Bin Wen,Qixin Yin,Shichen Wei,Shengcai Zhu,Xuegong Yu,Minchao Qin,Xinhui Lu,Keyou Yan,Jianbin Xu,Pingqi Gao

DOI: https://doi.org/10.1007/s40843-022-2266-9

2022-01-01

Science China Materials

Abstract:The surfaces of perovskite solar cells(PSCs)are significant in determining the devices'efficiencies and stabi-lities.Here,we first uncover that the 4-tert-butylpyridine(tBP),as an essential additive in hole transport layers(HTLs),could recrystallize the amorphous and defective perovskite surface layers and passivate the defective sites on grain sur-faces.The reconstruction induces a larger surface work func-tion and mitigates the interface energy level misalignment between perovskite and HTLs,enlarging the photovoltage of the device.Then,we engineer the chemical bonding strength and develop a more effective HTL additive 4-tert-butylpiper-idine(tBPp),which possesses a stronger interaction with perovskite surface defective sites than tBP.With the enhanced adsorption,the tBPp-reconstructed perovskite surface ex-hibits lower densities of defects and better stability under the stimuli of heat,light and humidity.As a result,the optimized tBPp PSC reaches a champion efficiency of 24.2％with much better operation stability.Tracked at the maximum power point under a continuous bias,the unsealed devices in a N2 atmosphere can nearly maintain their initial efficiency after continuous light exposure for over 1200 h.Our findings pro-vide an underlying understanding of the HTL additives,which markedly affect the efficiency and stability of n-i-p PSCs.
Heterointerface Energetics Regulation Strategy Enabled Efficient Perovskite Solar Cells

Yunfei Zhu,Zuolin Zhang,Xuefan Zhao,Mengjia Li,Yinsu Feng,Shuliang Zhang,Wenhuan Gao,Jiangzhao Chen,Jian‐Xin Tang,Cong Chen

DOI: https://doi.org/10.1002/aenm.202303946

IF: 27.8

2024-01-12

Advanced Energy Materials

Abstract:A heterointerface energetics regulation strategy by introducing potassium trifluoroacetate in the perovskite precursor solution to eliminate the trap defects and optimize surface potential and Fermi level, is proposed. Utilizing TOF‐SIMS, potassium is challenging to dope into the perovskite lattice but accumulates at both the upper surface and buried interface of the perovskite for reducing VOC losses of perovskite solar cells. In the domain of perovskite photovoltaics, the heterointerfaces are subject to substantial trap‐assisted non‐radiative recombination, predominantly attributed to the energy offset, interface defects, and the roughness of the contact. This phenomenon at the heterointerfaces, where carrier non‐radiative recombination and energy dissipation occur due to defects and suboptimal energy level alignment, can be principally held accountable for the Voc losses. Herein, a heterointerface energetics regulation (HER) strategy is proposed by introducing potassium trifluoroacetate (KTFA) in the perovskite precursor solution to eliminate the trap defects and optimize surface potential and Fermi level. It is first demonstrated that non‐doping K+ but precipitating at the upper and buried perovskite will improve energy‐level alignment for charge extraction dynamics. In addition, the TFA− exhibits strong electrostatic force with undercoordinated Pb2+ in the buried contact of perovskite and Sn4+ in the SnO2 electron transporting layer. Based on the vacuum flash evaporation green treatment without anti‐solvent, the Rb0.02(Cs0.05FA0.95)0.98PbI0.91Br0.03Cl0.06 and Cs0.05FA0.95PbI3 based device can achieve maximum efficiency of 23.36% and 24.48%, respectively. Further, the modified devices exhibit 92% initial efficiency output after 1200 h of aging. HER strategy for addressing interface defects and bandgap alignment are poised to advance both the performance and stability of perovskite solar cells.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Ionic‐Rich Vermiculite Tailoring Dynamic Bottom‐Up Gradient for High‐Efficiency Perovskite Solar Cells

Junshuai Zhang,Jiabao Li,Jialong Duan,Xinyu Zhang,Jie Dou,Qiyao Guo,Chi Jiang,Yuanyuan Zhao,Hao Huang,Qunwei Tang

DOI: https://doi.org/10.1002/adfm.202401662

IF: 19

2024-05-02

Advanced Functional Materials

Abstract:A 2D alkalis‐intercalated‐vermiculite is developed as buried atomical lubricant and ionic soil to universally eliminate the downward‐growth‐induced lattice disorders in perovskite film. Owing to the tensile strain release and the formation of ion‐diffusion‐induced bottom‐up passivation gradient, the efficiency and long‐term stability of perovskite solar cells is significantly improved. Mixed‐halide perovskites are emerging as excellent photovoltaic candidates because of their tunable bandgaps for semitransparent and tandem perovskite solar cells. However, the notorious film quality originated from the rapidly downward crystallization process susceptibly propagates enormous detrimental defects, which deteriorate the photovoltaic performance and accelerate halide segregation. To address this issue, herein, a multilayer alkalis‐intercalated‐vermiculite is employed as pre‐buried interface modifier to regulate the perovskite lattice property. The matchable lattice structure between perovskite and vermiculite by forming Pb─O bond not only releases the interfacial strain during the film growth but also the embedded alkalis ions can gradually diffuse into perovskite lattice to form a favorable vertical gradient owing to the weak interlamellar van der Waals interaction, playing bis‐roles of atomical lubricant and ion‐reservoir to eliminate detrimental defects. As a result, the film quality and lattice stability is significantly improved with suppressed phase segregation for mixed‐halide perovskites, accompanying a champion efficiency of 11.42% for carbon‐based CsPbIBr2 device, 15.25% for carbon‐based CsPbI2Br device and 23.17% for p‐i‐n inverted (Cs0.05MA0.05FA0.9)Pb(I0.93Br0.07)3 cell. This work provides a new strategy on buried interface engineering for making high‐efficiency and stable perovskite platforms.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied,chemistry, physical, condensed matter
Repairing Defects of Halide Perovskite Films to Enhance Photovoltaic Performance.

Mengru Wang,Bo Li,Jifeng Yuan,Fei Huang,Guozhong Cao,Jianjun Tian

DOI: https://doi.org/10.1021/acsami.8b12760

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:On account of the low-temperature solution fabrication, the much high defect density at the interfaces and grain boundaries of halide perovskite films is recognized as one of the big obstacles toward high-efficiency solar cells. Here, the time-resolved photoluminescence (TRPL) with incident light exciting from the upper surface and bottom of halide perovskite films, respectively, showed very different results, verifying the much more surface trap states in the film. To eliminate the defects and enhance the photovoltaic properties of perovskite solar cells (PSCs), we designed a facile and effective method to repair the defects of the perovskite film using formamidinium iodine (FAI) solution. The dissociative FA+ and I- ions could compensate for the loss of volatile organic cations and also fill the I- vacancies of halide perovskites. After repairing defects with proper concentration of FAI solution, the TRPL curves obtained by light exciting from the different sides of the perovskite film nearly overlap together, indicating the reduction of surface traps. As a result, both the total carrier lifetime and charge extractions were improved by removing the nonradiative channels (surface traps), which universally enhanced the power conversion efficiency and stability of the planar heterojunction structural PSCs.
Performance Enhancement of Lead‐Free 2D Tin Halide Perovskite Transistors by Surface Passivation and Its Impact on Non‐Volatile Photomemory Characteristics

I‐Hsiang Chao,Yu‐Ting Yang,Ming‐Hsuan Yu,Chiung‐Han Chen,Chwen‐Haw Liao,Bi‐Hsuan Lin,I‐Chih Ni,Wen‐Chang Chen,Anita W. Y. Ho‐Baillie,Chu‐Chen Chueh

DOI: https://doi.org/10.1002/smll.202207734

IF: 13.3

2023-02-16

Small

Abstract:Surface passivation of two‐dimensional PEA2SnI4 films with organic ligands proves to be effective in protecting the films from oxygen and moisture, and in improving the performance of the transistors. On the one hand, the degradation rate after passivation is retarded. On the other hand, passivation leads to fewer defect states and better energy‐level alignment, yielding higher mobility and light‐induced photocurrents. Two‐dimensional (2D) tin (Sn)‐based perovskites have recently received increasing research attention for perovskite transistor application. Although some progress is made, Sn‐based perovskites have long suffered from easy oxidation from Sn2+ to Sn4+, leading to undesirable p‐doping and instability. In this study, it is demonstrated that surface passivation by phenethylammonium iodide (PEAI) and 4‐fluorophenethylammonium iodide (FPEAI) effectively passivates surface defects in 2D phenethylammonium tin iodide (PEA2SnI4) films, increases the grain size by surface recrystallization, and p‐dopes the PEA2SnI4 film to form a better energy‐level alignment with the electrodes and promote charge transport properties. As a result, the passivated devices exhibit better ambient and gate bias stability, improved photo‐response, and higher mobility, for example, 2.96 cm2 V−1 s−1 for the FPEAI‐passivated films—four times higher than the control film (0.76 cm2 V−1 s−1). In addition, these perovskite transistors display non‐volatile photomemory characteristics and are used as perovskite‐transistor‐based memories. Although the reduction of surface defects in perovskite films results in reduced charge retention time due to lower trap density, these passivated devices with better photoresponse and air stability show promise for future photomemory applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
High‐Performance Tin‐Halide Perovskite Transistors Enabled by Multiple A‐Cation Engineering

Xiaomin Yang,Yu Liu,Shuzhang Yang,Yanqiu Wu,Yusheng Lei,Yingguo Yang,Ao Liu,Junhao Chu,Wenwu Li

DOI: https://doi.org/10.1002/adfm.202403917

IF: 19

2024-06-07

Advanced Functional Materials

Abstract:One of the challenges in achieving high‐performance Sn‐perovskite TFTs lies in depositing high‐quality perovskite thin films. A multi‐A‐cation strategy is proposed to effectively improve the quality of Sn‐perovskite films, aiming to achieve high performance and stable Sn‐perovskite TFTs. This work offers valuable technological applications for future Sn‐perovskite TFT advancements. Metal‐halide perovskite semiconductors have garnered great attention in optoelectronic devices due to their remarkable properties and processing capabilities. Among them, tin (Sn2+) perovskites stand out as promising candidates for use as channel layers in high‐performance p‐channel thin‐film transistors (TFTs) owing to their excellent hole transport property. In this study, a multi A‐cation approach is applied to pure Sn2+ perovskite, incorporating a small amount (7 mol%) of bulky PEA+ cation. This addition greatly improved the crystallinity and orientation of 3D FA0.9Cs0.1SnI3 perovskite, leading to optimized p‐channel Sn2+‐perovskite TFT with a hole mobility of ≈18 cm2 V−1 s−1, a high on/off current ratio of 108, and a small subthreshold swing of 0.5 V dec−1. These TFTs also exhibit a low contact resistance of 87 Ω·cm, attributed to the improved electrode/perovskite channel interface. Furthermore, the TFTs are utilized as an electrical characterization platform to study the charge transport properties and interfacial defects using the low‐frequency noise method, providing insights into the interface properties of perovskite electronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

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Performance Enhancement of Lead‐Free 2D Tin Halide Perovskite Transistors by Surface Passivation and Its Impact on Non‐Volatile Photomemory Characteristics

High‐Performance Tin‐Halide Perovskite Transistors Enabled by Multiple A‐Cation Engineering