Electron Beam Lithography in Passivated Gold Nanoclusters

Tr Bedson,Re Palmer,Jp Wilcoxon
DOI: https://doi.org/10.1016/s0167-9317(01)00562-7
IF: 2.3
2001-01-01
Microelectronic Engineering
Abstract:We have employed thin films of passivated gold nanoclusters, deposited from solution onto a range of surfaces (graphite, silicon, thermally grown silicon dioxide and sputtered silicon dioxide), as a negative tone electron beam resists. The best resolution achieved to date is 26 nm. Response curves obtained for monolayer films on the SiO2 surfaces indicate that the sensitivity depends on the substrate, attributed to backscattering of the primary beam (and secondary electron generation), as confirmed by Monte Carlo simulations.
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