Abstract:With the development of integrated circuit towards the characteristics of the low-power consumption, miniaturization and high integration, three-dimensional integration technology based on Through-Silicon Via (TSV) comes into being. However, the thermal accumulation caused by the maximum stack density and the thermal stress caused by the mismatched thermal expansion coefficient between TSV surrounding materials will lead to the reliability problems such as circuit function failure and device performance drift. In this paper, the heat dissipation performance and thermal-mechanical reliability of TSV array in 2.5D silicon interposer were studied when the operation temperature is increased from 20°C to 100°C. Firstly, the influences of the geometrical parameters, such as the through hole radius, depth to width ratio, insulation thickness and TSV spacing, on thermal-mechanical reliability were analyzed for single TSV, paired TSV and 3*3 TSV array structures. Secondly, a configuration of TSV regular hexagonal array in silicon interposer is proposed to improve its heat dissipation performance.Our simulation results disclose that the stress is mainly concentrated at the junction where SiO2 layer deviates to copper and silicon substrate deviates to SiO2, which indicates the SiO2 layer is most prone to fracture. The through hole radius should be designed as small as possible to reduce the thermal stress, and a thicker SiO2 insulation layer thickness will induce the better thermal-mechanical stability of TSV. The optimized TSV's depth to width ratio should be set above 5 with the simultaneous consideration of the stress for silicon substrate, insulating layer, filled copper. For multiple TSVs, the spacing should be greater than twice the diameter to eliminate the influence of thermal stress between TSVs. In addition, in the case of the same spacing, the equivalent unit temperature of TSV regular hexagonal array distribution is 2.9°C lower than that of conventional matrix array distribution. The analysis and design of TSV array in 2.5D silicon interposer is promising to offer guideline to the future advanced package development.

In Situ Measurement on TSV-Cu Deformation with Hotplate System Based on Sheet Resistance

Optimization of thermal loads in TSV fabrication process based on real-time micro deformation process analysis of copper

Modeling and Characterization of Joule Heating in Metal Core of Tsv

Numerical and Experimental Investigation of Thermomechanical Deformation in High-Aspect-Ratio Electroplated Through-Silicon Vias

Investigation of Mechanical Properties of Cu-TSV by Uniaxial Micro-tensile Test

Thermomechanical Reliability of a Cu-TSV Integration Model Based on 3D Fabrication Processes

Experimental and Finite Elemental Investigations on Residual Stress of TSV

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

The Protrusion Behaviors in Cu-TSV During Heating and Cooling Process

Fabrication and Traceable Quality Evaluation of Fine Pitch Tsv with Self-Integrated Micro Heater and Thermocouple

Influence of inhomogeneous anisotropic Copper grains in TSV on the thermo-mechanical behaviors in the annealing process

Thermal-mechanical Reliability Assessment of TSV Structure for 3D IC Integration

The thermal stress analysis in 3D IC integration with TSV interposer

Reliability Simulation Analysis of TSV Structure in Silicon Interposer under Temperature Cycling

Thermal-Mechanical Analysis of TSV Array in 2.5D Silicon Interposer

Study on TSV-Cu protrusion under different annealing conditions and optimization

Design and Optimization of Thermal-Mechanical Reliability of a TSV 3D Packaged Thermal Wind Sensor

Stress Evolution Mechanism and Thermo-Mechanical Reliability Analysis of Copper-Filled TSV Interposer

Micro-Compression Testing of TSV Copper Pillar: An <i>In Situ</i> Method and Mechanical Property

Monitoring The Stress Evolution Of Through Silicon Vias During Thermal Cycling With Infrared Photoelasticity

A Study of the Global and Local Cu Protrusion in Cu-Filled Through Silicon Vias Under Heat Treatment