Abstract:The identical crystal phase is one of the most critical and challenging subjects in the fabrication of low dimensional III–V semiconductors for electronic and optoelectronic applications. The polytype boundaries induced by the coexistence of wurtzite (WZ) and zinc blende (ZB) phases in the nanowire (NW) limits the device performance. It is interesting to find that the epitaxially grown GaAsSb shell outside the WZ/ZB mixed-phase GaAs NW will induce the complete transformation of WZ segments of GaAs to ZB structures due to the shear tension. The underlying physical mechanism was proposed and verified by first-principle transition barrier calculations and the Shockley partial dislocations theory. Based on the fabricated pure-phase NW, a proof-of-concept high-performance avalanche photodiode was demonstrated, which shows responsivity and a multiplication factor up to 3.3 × 103 A/W and 8.62 × 103 at −11.5 V, respectively. This work promises shear tension as an effective strategy for the controlled syntheses of single-phase semiconductor NWs and other nanostructures.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsphotonics.1c01196.Experimental methods (substrate treatment, NWs growth, material characterizations, detector fabrication, device characterization, and first-principles calculations); the morphology of GaAs NWs, the EDXs, and mapping of GaAs/GaAsSb NW; the Raman and μ-Raman spectra of GaAs and GaAs/GaAsSb NWs; the TEM images of GaAs and GaAs/GaAsSb NWs; the strain of GaAs/GaAsSb core–shell structure (PDF)This article has not yet been cited by other publications.

High Density GaAs Nanowire Arrays Through Substrate Processing Engineering

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

OS1503 Development of Highly Ordered Silicon Nanowire Array

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Fabrication of GaAs Nanowires by Colloidal Lithography and Dry Etching

Terrace-confined guided growth of high-density ultrathin silicon nanowire array for large area electronics

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates.

Phase Transition Induced Vertical Alignment of Ultrathin Gallium Phosphide Nanowire Arrays on Silicon by Chemical Beam Epitaxy

Controlled Synthesis of Pure-Phase GaAs Nanowires through Shear Tension

A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates

Wafer-scale High-Throughput Ordered Arrays of Si and Coaxial Si/Si(1-x)Ge(x) Wires: Fabrication, Characterization, and Photovoltaic Application.

Ordered Arrays of High-Quality Single-Crystalline Α-Si3n4 Nanowires: Synthesis, Properties and Applications

Monolithic lateral p-n junction GaAs nanowire diodes via selective lateral epitaxy

Substrate-Free Chemical Vapor Deposition of Large-Scale III-V Nanowires for High-Performance Transistors and Broad-Spectrum Photodetectors

Wafer-Scale Assembly of Semiconductor Nanowire Arrays by Contact Printing

Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

Fabrication Of Vertical Position-Controllable Gan Nanowires On (111) Si Substrate