Abstract:Sb-doped SnO2 (ATO) films have received extensive attention as transparent conductive films, but there is still a lack of in-depth and systematic study on combined effects of substrate temperature (T-s) and annealing temperature (T-a) on their transparent conductive properties. In this study, ATO films were prepared using RF magnetron sputtering at RT similar to 400 degree celsius and subsequently annealed at 200-1000 degree celsius. The results show that the conductive properties of the films enhance (with a decrease in resistivity from 1.15x10(-1) to 2.15x10(-3) Omega center dot cm) and the average visible-light transmittance (T-Vis) decreases (90.16 -> 38.24%) with increase of T-s. With the increase of T-a, the conductive properties of the films prepared at different T-s tend to first enhance and then degrade, and the T-Vis basically shows a trend of first decreasing and then increasing. After annealing at 600 degree celsius, the films prepared at RT and 100 degree celsius can achieve better comprehensive properties (resistivity of 2.50x10(-3) and 1.64x10(-3) Omega center dot cm, carrier concentration of 3.35x10(20) and 4.93x10(20) cm(-3), mobility of 7.73 and 7.76 cm(2)/V center dot s, sheet resistance of 84 and 55 Omega/sq., and T-Vis of 86.63 and 79.50%). In order to explore the intrinsic mechanism of the optical and electrical performance of ATO films changing with T-s and T-a, the preferred orientation, crystallinity, and stress state of the films were analyzed by XRD, and their surface morphology was observed by SEM. Meanwhile, the chemical states of Sn, O and Sb as well as Sb content in the films were analyzed by XPS, and their lattice vibration modes of the film were studied by Raman spectra. Finally, the process-structure-properties correlations were established for the ATO films.

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