Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

DYNAMICAL SCREENING AND CARRIER MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES

Dynamical Screening and Electron Self-Energy in the Presence of Polar Interaction in Quasi-2D Heterostructures

Analysis of the Scattering of Electrons by Special Vibrational Modes in A Gaas Quantum Well with A Thin Alas Middle Barrier: Mobility Modulated by A Transversal Electric Field

Electron Mobility in A Gaas/Alas Quantum Well with A Thin Alas Middle Barrier

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Mobility of Two-Dimensional Electron Gas in Gaas-Algaas Heterojunctions (Ii)

Negative Minority-Electron Mobility in A Nonequilibrium Electron-Hole Plasma

Phonon-limited electron mobility in Si, GaAs and GaP with exact treatment of dynamical quadrupoles

Mobility Anisotropy of Two-Dimensional Semiconductors

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Phonon transport across GaAs/Ge heterojunctions by nonequilibrium molecular dynamics

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Simultaneous study of acoustic and optic phonon scattering of electrons and holes in undoped $\mathrm{GaAs}$/$\mathrm{Al_{x} Ga_{1-x} As}$ heterostructures

Fang–Howard Wave Function Modelling of Electron Mobility in AlInGaN/AlN/InGaN/GaN Double Heterostructures*

Carrier Transport Simulation For Bulk Alxga1-Xas With A Gamma-L-X Band Structure Based On Lei-Ting Balance Equations

Hot-electron Mobility in Laterally Confined Systems

Nonlinear Transport in Gaas/Alas Harmonically Confined Quantum Wires

Two-dimensional hot-electron transport in GaAs-AlGaAs heterojunctions

Electron mobility and energy relaxation rate in GaAs/GaAlAs superlattice

Mapping of Long-Wavelength Phonon Contribution in the Thermal Transport of Alloyed Semiconductor Superlattices.