Carrier Transport Simulation For Bulk Alxga1-Xas With A Gamma-L-X Band Structure Based On Lei-Ting Balance Equations

Jc Cao,Xl Lei
DOI: https://doi.org/10.1016/0038-1101(95)00418-1
IF: 1.916
1996-01-01
Solid-State Electronics
Abstract:With the help of the Lei-Ting balance equations for multi-valley semiconductors, a detailed calculation of steady-state hot-electron transport in bulk AlxGa1-xAs with a Gamma-L-X band structure has been carried out for various compositions and lattice temperatures. We introduce different drift velocity, electron temperature and Fermi energy level (or electron density) for the Gamma, L and X valleys. The calculated results for drift velocity as a function of the applied electric field show good agreement with those obtained from Monte Carlo simulation. The role of different scattering mechanisms, which affect the negative differential mobility characteristics is also discussed. It is indicated that the Lei-Ting method is a very convenient and effective tool for studying the transport behaviour of carriers in semiconductors. Copyright (C) 1996 Elsevier Science Ltd.
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