High Performance Flexible Memristors Based on a Lead Free AgBiI4perovskite with an Ultralow Operating Voltage

Haibo Ye,Bo Sun,Ziyi Wang,Zhiyong Liu,Xuning Zhang,Xianhua Tan,Tielin Shi,Zirong Tang,Guanglan Liao

DOI: https://doi.org/10.1039/d0tc03287e

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Lead-free inorganic perovskite materials exhibit excellent memristive properties, such as high ON/OFF ratio and low switching voltage.

What problem does this paper attempt to address?

Fabrication of High Quality Lead-free Double Perovskite Cs2AgBiBr6 Thin Film and its Application in Memristor with Ultralow Operation Voltage

Xiaofang Zhang,Ke Wang,Zhenyu Li,Juanjuan Qi,Dongke Li,Jianqiang Luo,Jian Liu,Li Dongke

DOI: https://doi.org/10.1088/1361-6528/ad2158

IF: 3.5

2024-01-24

Nanotechnology

Abstract:Recently, the lead-free double perovskite Cs2AgBiBr6 has been considered as a promising candidate for next-generation nonvolatile memory and artificial synapse devices due to its high stability and low toxicity compared to its lead-based counterparts. In this work, we developed a simple and effective method to produce high-quality lead-free double perovskite Cs2AgBiBr6 thin films without pinholes and particles by applying a low-pressure assisted (LPA) method under ambient condition with a relative humidity (RH) of about 45%. The formation of pinholes and Ag precipitation in the perovskite Cs2AgBiBr6 films is effectively suppressed by the proper ratio of N,N-dimenthylformamide (DMF) mixed in Dimethyl sulfoxide (DMSO) solvents. Furthermore, the grain size of the Cs2AgBiBr6 films can be significantly increased by increasing the post-annealing temperature. Finally, a sandwiched structure memristor with an ITO/Cs2AgBiBr6/Ta configuration was successfully demonstrated, featuring ultralow operation voltage (VSet ~57  23 mV, VReset ~ 692  68 mV) and satisfactory memory window (the ratio of RHRS/RLRS ~ 10 times), which makes it suitable for low-power consumption information storage devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Flexible memristors with low-operation voltage and high bending stability based on Cu2AgBiI6 perovskite

Lingyu Meng,Xinci Chen,Zicong Li,Xiaoli Han,Xiang-Guo Yin,Zhijun Zhang,Xianmin Zhang

DOI: https://doi.org/10.1063/5.0231148

IF: 2.877

2024-09-03

Journal of Applied Physics

Abstract:Cu2AgBiI6 films were prepared by a one-step spin coating method, and flexible memristors with an Ag/PMMA/Cu2AgBiI6/ITO structure were constructed. The devices showed a bipolar resistive switching behavior with low switching voltage, which is beneficial for reducing energy consumption. Furthermore, this study found that the device exhibits an endurance of about 900 cycles, a higher ON/OFF ratio of over 103, a long retention time (∼104 s), and high stabilities against mechanical stress. Remarkably, the present flexible memristor displayed extraordinary flexibility and stability, with no significant change for the resistive switching behavior even at various bending angles or after undergoing 900 bending cycles. This study establishes that the lead-free halide perovskite Cu2AgBiI6 can be used for the resistive random-access memory of flexible electronics.

Engineering,Materials Science
High-performance and humidity robust multilevel lead-free all-inorganic Cs3Cu2Br5 perovskite-based memristors

Zicong Guo,Rui Xiong,Yuanyuan Zhu,Ziyu Wang,Jing Zhou,Yong Liu,Daobin Luo,Youqing Wang,Hongjun Wang

DOI: https://doi.org/10.1063/5.0129311

IF: 3.5

2023-01-30

Physics Today

Abstract:Halide perovskites have attracted surge of interest in the memristor field due to their superior electrical property and corresponding remarkable device performances. However, the issues of toxicity and unstable properties still severely restrict their potential applications. Here, the lead-free all-inorganic perovskite Cs 3 Cu 2 Br 5 films are adopted as the switching layer to fabricate memristors with Al/Cs 3 Cu 2 Br 5 /ITO structure. The prepared Al/Cs 3 Cu 2 Br 5 /ITO memristors exhibit typical reproducible bipolar resistive switching (RS) behavior with striking characteristics, including ultralow operating voltages (0.45, −0.39 V), moderate high resistance state/low resistance state ratio (≈10 2 ), and remarkable retention time (>10 4 s). In addition, the multilevel storage capability can be achieved by controlling compliance current. The RS effect, stemming from the formation/rupture of both localized conductive Br vacancy/Al atom filaments, is proposed to illustrate the memristors. More importantly, the RS behavior of Al/Cs 3 Cu 2 Br 5 /ITO memristors maintains robustness in harsh environments with humidity up to 80%, enabling secure hardware applicable in extreme environments. This work demonstrates the opportunity for exploring the next-generation nonvolatile memories based on lead-free all-inorganic halide perovskites in future environmental-friendly and humidity robust electronics.

physics, multidisciplinary
Low power consumption photoelectric coupling perovskite memristor with adjustable threshold voltage

Shaoxi Wang,Zhejia Zhang,Yuxuan Xiong,Xiangqi Dong,Jian Sha,Xiaochen Bai,Wei Li,Yue Yin,Yucheng Wang

DOI: https://doi.org/10.1088/1361-6528/ac0667

IF: 3.5

2021-01-01

Nanotechnology

Abstract:Organic-inorganic halide perovskites (OHPs) have been proven to possess unique optical and electrical properties, and achieved more extensive application as excellent materials for memristors in recent years. Based on the traditional OHP-based memristors, the intermediate layer of the memristor was prepared using yttrium oxide (Y2O3)/OHP stacking structure in this manuscript. The potential barrier between Y2O3 and perovskite is relatively high (Delta E (C) = 2.13 eV) which leads to comparatively low current of the memristor, thus the power consumption can be reduced. Besides, by changing the external light conditions, one can realize sharp or slow switch between high resistance state (HRS) and low resistance state (LRS), so as to meet the requirement of multilevel data storage, which indicates its promising application prospect in information storage and biological simulation. In addition, based on characteristics of photoelectric coupling, the Y2O3/OHP memristor can also achieve the advantage of adjustable threshold voltage. The transition of HRS and LRS can be realized by changing the illumination condition at any voltage, which means the set and reset voltage are not fixed, so that the memristor with adjustable threshold voltage can adapt to various working conditions.
Dimer-type Cs3Sb2I9: an Efficient Perovskite Material for Low Operating Voltage and High Stability Flexible Resistive Switching Memory

Yiming Yuan,Yuchan Wang,Wenxia Zhang,Fei Qi,Xiaosheng Tang,Zhen Wang

DOI: https://doi.org/10.1016/j.jallcom.2022.168308

2021-01-01

SSRN Electronic Journal

Abstract:All-inorganic perovskites have been taken as the promising functional materials in non-volatile resistive switching (RS) memory. Herein, the lead-free all-inorganic Cs3Sb2I9 perovskites with high stability are fabricated via hydrochloric acid (HCl) assisted solution method at low-temperature. The devices with a structure of Ag/polymethyl methacrylate (PMMA)/HCl-modified dimer-Cs3Sb2I9/ITO take on typical bipolar RS behavior and remarkable characteristics such as high ON/OFF ratio (P,66), low operating voltage (P, -0.34 V/+0.25 V), excellent endurance property (>= 120 cycles) and long data retention (>= 104 s). Moreover, outstanding mechanical stability of the Cs3Sb2I9-based flexible memory devices are demonstrated under different bending angles and over consecutive 103 bending cycles. In addition, the Cs3Sb2I9-based memory devices show no obvious change in the RS behavior after over 10 days storage under an ambient atmo-sphere. This work will contribute to understanding the characteristics of low operating voltage and high stability RS behavior of the all-inorganic perovskites, and illuminate the great application potential of the lead-free antimony-based perovskite materials in next generation low power consumption non-volatile flexible memory devices.(c) 2022 Elsevier B.V. All rights reserved.
Controllable Volatile-to-nonvolatile Memristive Switching in Single-Crystal Lead-Free Double Perovskite with Ultralow Switching Electric Field

Qi You,Fu Huang,Feier Fang,Jiaqi Zhu,Yue Zheng,Shaofan Fang,Bo Zhou,Henan Li,Cheng Han,Yumeng Shi

DOI: https://doi.org/10.1007/s40843-022-2113-y

2022-01-01

Science China Materials

Abstract:All-inorganic lead-free double perovskite offers a potential material platform for electronic or optoelectronic memory devices owing to its ionic migration-based electrical transport, high photosensitivity, low toxicity, and environmental stability. However, the commonly used polycrystalline perovskite films severely restrict device performance. Herein, we demonstrate a high-performance memristor based on single-crystal double perovskite Cs2AgBiBr6 with an ultralow switching electric field of 6.67 × 104 V m−1 and a high current on/off ratio of 107. Remarkably, the resistive switching of Cs2AgBiBr6 is found to be thickness-dependent, which evolves from volatile threshold to nonvolatile resistance switching with the crystal thickness from 100 to 800 nm. Elemental analysis reveals that the formation of conductive channels in Cs2AgBiBr6 is associated with the migration of Br vacancies with low activation energy. In addition, the formed conductive channels can be annihilated by light illumination with controlled wavelength and intensity, which leads to the realization of optoelectronic memories with separate electrical-writing and optical-erasing processes. Our findings provide deep insights into the ionic migration in single-crystal perovskite and pave the way for its future application in electronic and optoelectronic memory devices.
High Performance Full-Inorganic Flexible Memristor with Combined Resistance-Switching

Yuan Zhu,Jia-sheng Liang,Vairavel Mathayan,Tomas Nyberg,Daniel Primetzhofer,Xun Shi,Zhen Zhang

DOI: https://doi.org/10.1021/acsami.2c02264

2022-04-27

Abstract:Flexible memristors hold great promise for flexible electronics applications but are still lacking of good electrical performance together with mechanical flexibility. Herein, we demonstrate a full-inorganic nanoscale flexible memristor by using free-standing ductile α-Ag2S films as both a flexible substrate and a functional electrolyte. The device accesses dense multiple-level nonvolatile states with a record high 106 ON/OFF ratio. This exceptional memristor performance is induced by sequential processes of Schottky barrier modification at the contact interface and filament formation inside the electrolyte. In addition, it is crucial to ensure that the cathode junction, where Ag+ is reduced to Ag, dominates the total resistance and takes the most of setting bias before the filament formation. Our study provides a comprehensive insight into the resistance-switching mechanism in conductive-bridging memristors and offers a new strategy toward high performance flexible memristors.

materials science, multidisciplinary,nanoscience & nanotechnology
High-Performance Perovskite Memristor Based on Methyl Ammonium Lead Halides

Kai Yan,Ming Peng,Xiao Yu,Xin Cai,Si Chen,Hsienwei Hu,Buxin Chen,Xue Gao,Bin Dong,Dechun Zou

DOI: https://doi.org/10.1039/c6tc00141f

IF: 6.4

2016-01-01

Journal of Materials Chemistry C

Abstract:High-performance memristors were fabricated based on methyl ammonium lead halide perovskite materials and achieved an on–off ratio of 1.9 × 109.
Environmentally Robust Memristor Enabled by Lead-Free Double Perovskite for High-Performance Information Storage.

Xue-Feng Cheng,Wen-Hu Qian,Jia Wang,Chuang Yu,Jing-Hui He,Hua Li,Qing-Feng Xu,Dong-Yun Chen,Na-Jun Li,Jian-Mei Lu

DOI: https://doi.org/10.1002/smll.201905731

IF: 13.3

2019-01-01

Small

Abstract:Memristors are emerging as a rising star of new computing and information storage techniques. However, the practical applications are severely challenged by their instability toward harsh conditions, including high moisture, high temperatures, fire, ionizing irradiation, and mechanical bending. In this work, for the first time, lead-free double perovskite Cs2 AgBiBr6 is utilized for environmentally robust memristors, enabling highly efficient information storage. The memory performance of the typical indium-tin-oxide/Cs2 AgBiBr6 /Au sandwich-like memristors is retained after 1000 switching cycles, 105 s of reading, and 104 times of mechanical bending, comparable to other halide perovskite memristors. Most importantly, the memristive behavior remains robust in harsh environments, including humidity up to 80%, temperatures as high as 453 K, an alcohol burner flame for 10 s, and 60 Co γ-ray irradiation for a dosage of 5 × 105 rad (SI), which is not achieved by any other memristors and commercial flash memory techniques. The realization of an environmentally robust memristor from Cs2 AgBiBr6 with a high memory performance will inspire further development of robust electronics using lead-free double perovskites.
A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

Bai Sun,Xuejiao Zhang,Guangdong Zhou,Tian Yu,Shuangsuo Mao,Shouhui Zhu,Yong Zhao,Yudong Xia

DOI: https://doi.org/10.1016/j.jcis.2018.03.001

2018-06-15

Abstract:In this work, a flexible resistive switching memory device based on ZnO film was fabricated using a foldable Polyethylene terephthalate (PET) film as substrate while Ag and Ti acts top and bottom electrode. Our as-prepared device represents an outstanding nonvolatile memory behavior with good "write-read-erase-read" stability at room temperature. Finally, a physical model of Ag conductive filament is constructed to understanding the observed memory characteristics. The work provides a new way for the preparation of flexible memory devices based on ZnO films, and especially provides an experimental basis for the exploration of high-performance and portable nonvolatile resistance random memory (RRAM).
Robust mica perovskite photoelectric resistive switching memory

Guanglei Zhang,Yanqing Xu,Shuai Yang,Shuxia Ren,Yinan Jiao,Ye Wang,Xuena Ma,Hao Li,Weizhong Hao,Caili He,Xiaomin Liu,Jinjin Zhao

DOI: https://doi.org/10.1016/j.nanoen.2022.108074

IF: 17.6

2022-12-05

Nano Energy

Abstract:Metal halide perovskites have attracted considerable attention for use in flexible resistive random access memory (RRAM), due to their good photoelectric regulation, high ON/OFF ratios, and low fabrication costs. Flexible conductive substrates play a crucial role in improving RRAM device performance. Herein, mica/silver nanowires welded with aluminum-doped zinc oxide (mica/) substrates with high-temperature resistance, high flexibility, high conductivity, and good stability have been successfully fabricated. The average sheet resistance 3.5 Ω sq −1 of the conductive mica substrate is 68% lower than that of a commercial PET/ITO, and it remains stable below 13.1 Ω sq −1 under 200 °C. The maximum conductivity of the mica/ substrate can reach 58 S/m after 64 h of tensile stress bending at a radius of 20 mm. Perovskite CsPbBr 3 nanocrystal (NC) RRAM is constructed on the mica/ substrate. The ON/OFF ratio 10 3 of the device in light is 10 2 times higher than that in dark under 5000 bending cycles. Flexible perovskite RRAM is a promising candidate for next-generation-logic, adaptive, non-volatile memory devices.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
High‐Performance and Environmentally Robust Multilevel Lead‐Free Organotin Halide Perovskite Memristors

Zehen Liu,Hao Tang,Pengpeng Cheng,Ruyan Kang,Jian Zhou,Xian Zhao,Jia Zhao,Zhiyuan Zuo

DOI: https://doi.org/10.1002/aelm.202201005

IF: 6.2

2022-10-20

Advanced Electronic Materials

Abstract:Here, nontoxic and lead‐free PEACl‐MASnI3 (PEACl‐MASI) memristor arrays are successfully fabricated, which exhibit excellent resistive switching (RS) such as ultrahigh ON/OFF ratio, stable endurance and retention, high device yield, and multilevel storage. Memristors can remain robust in harsh environments and be fabricated on other special substrates. A complete model is proposed that quantitatively and accurately describes RS. With a striking explosion of digital information, organic–inorganic halide perovskite (OHP) memristors have been regarded as a promising solution to break the von Neumann bottleneck as the nonvolatile computing‐in‐memory architecture. However, toxicity and stability under ambient conditions are two critical issues for practical applications. Here, lead‐free MASnI3 (MASI) perovskites are reported with improved resistive switching (RS) performance via defects passivating by introducing PEACl. In‐Sn/PEACl‐MASI/PEDOT:PSS/ITO memristor arrays (10 × 10) exhibit reproducible RS with low SET/RESET voltage (VSET/VRESET, +0.58/−0.49 V), ultrahigh ON/OFF ratio (8.5 × 103), stable endurance (2 × 103 cycles), excellent retention (2 × 104 s), high device yield (88%), and multilevel storage. RS remains robust in harsh environments, including high temperature and humidity, long‐term light irradiation, and open‐air conditions. Importantly, a complete physical simulation model that quantitatively and accurately describes RS in vacancy concentration, temperature, and electric potential is proposed originating from conductive filaments formation/rupture. Additionally, PEACl‐MASI memristors are successfully fabricated on polyethylene terephthalate (PET) and Si substrates to explore the potential for large‐scale application on different substrates. The PEACl‐MASI memristors provide an opportunity to develop the next generation of high‐performance and environmentally robust multilevel information storage devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Lead‐free Perovskite MASnBr3‐based Memristor for Quaternary Information Storage

Wen-Hu Qian,Xue-Feng Cheng,Jin Zhou,Jing-Hui He,Hua Li,Qing-Feng Xu,Na-Jun Li,Dong-Yun Chen,Zhi-Gang Yao,Jian-Mei Lu

DOI: https://doi.org/10.1002/inf2.12066

2019-01-01

InfoMat

Abstract:Memristors are a new type of circuit element with a resistance that is tunable to discrete levels by a voltage/current and sustainable after removal of power, allowing for low-power computation and multilevel information storage. Many organic-inorganic lead perovskites are reported to demonstrate memristive behavior, but few have been considered for use as a multilevel memory; also, their potential application has been hindered by the toxicity of lead ions. In this article, lead-free perovskite MASnBr(3) was utilized in memristors for quaternary information storage. Indium tin oxide (ITO)/MASnBr(3)/Au memristors were fabricated and showed reliable memristive switching with well-separated ON/OFF states of a maxima resistance ratio of 10(2) to 10(3). More importantly, four resistive states can be distinguished and repeatedly written/read/erased with a retention time of 10(4)seconds and an endurance of 10(4) pulses. By investigating the current-electrode area relationship, Br distribution in the ON/OFF states by in situ Raman and scanning electron microscopy, and temperature-dependent current decay, the memristive behavior was explicitly attributed to the forming/breaking of conductive filaments caused by the migration of Br- under an electric field. In addition, poly(ethylene terephthalate)-ITO/MASnBr(3)/Au devices were found to retain their multiresistance state behavior after being bent for 1000 times, thus demonstrating good device flexibility. Our results will inspire more lead-free perovskite work for multilevel information storage, as well as other memristor-based electronics. image
Photoassisted Electroforming Method for Reliable Low‐Power Organic–Inorganic Perovskite Memristors

Xiaoning Zhao,Zhongqiang Wang,Wentong Li,Shaowu Sun,Haiyang Xu,Peng Zhou,Jiaqi Xu,Ya Lin,Yichun Liu

DOI: https://doi.org/10.1002/adfm.201910151

IF: 19

2020-01-01

Advanced Functional Materials

Abstract:Organic-inorganic hybrid perovskite memristors with high resistive-switching (RS) reliability and low power consumption are crucial for high-density storage and high-efficiency neuromorphic computing. However, the current overshoot in the electroforming process generally induces overgrowth of conductive filaments (CFs) and degrades the RS performance. Here, a simple photo-assisted electroforming (PAE) method to suppress the current overshoot, in which the visible light irradiation is introduced into the initial electroforming process, is proposed for the first time. As a result, a reliable memristor with reduced RS fluctuation and enhanced cycling endurance is obtained, and also, the low operating current of 0.06 mA and low powerconsumption of 0.12 mW are achieved, which are about one order of magnitude lower than those of most reported hybrid perovskite-based memristors. Further experimental evidence indicates that light irradiation plays dual roles: 1) the light-induced lowering of iodide migration barrier leads to a significant reduction of overshoot current and forming voltage; 2) the enhanced local photoconductivity of the perovskite film shares the overshoot current through the CFs. Both factors limit the total quantity of vacancy defects generated in the electroforming process, thus preventing undesirable overgrowth of the CFs. The present PAE strategy has promise for developing high-performance memristors.
Flexible Resistive Switching Device Based on Air-Stable Lead-Free Cu3SbI6 Perovskite Film for Nonvolatile Memory Application

Yuchan Wang,Yiming Yuan,Wenxia Zhang,Fei Qi,Nan Zhang,Ting Liu,Xiaosheng Tang

DOI: https://doi.org/10.1063/5.0093943

IF: 4

2022-01-01

Applied Physics Letters

Abstract:Resistive switching (RS) behavior of lead-free rudorffite perovskite Cu3SbI6 is explored for developing high performance flexible resistive switching random access memory (ReRAM) devices. The Cu3SbI6 based devices exhibit reproducible bipolar nonvolatile RS behaviors with low operating voltage (≤±0.6 V), stable endurance (≥400 cycles), and long data retention time (≥104 s). Moreover, the devices fabricated on flexible substrates show good electrical reliability and mechanical stability under different bending angles and consecutive bending cycles (103 times). A computational study method is used to reveal the mechanical stability of the Cu3SbI6 and the RS properties of the memory devices. More importantly, the Cu3SbI6 based devices exhibit no significant changes in RS behaviors after stored in ambient conditions for over 60 days. The results suggest that devices based on all-inorganic lead-free rudorffite perovskite materials have great potential for high performance, stable, and flexible ReRAM.
Low-Dimensional Lead-Free Inorganic Perovskites for Resistive Switching with Ultralow Bias

Shuaipeng Ge,Xinwei Guan,Yutao Wang,Chun-Ho Lin,Yimin Cui,Yunxia Huang,Xinran Zhang,Ruoxuan Zhang,Xiaoting Yang,Tom Wu

DOI: https://doi.org/10.1002/adfm.202002110

IF: 19

2020-01-01

Advanced Functional Materials

Abstract:3D organic-inorganic and all-inorganic lead halide perovskites have been intensively pursued for resistive switching memories in recent years. Unfortunately, instability and lead toxicity are two foremost challenges for their large-scale commercial applications. Dimensional reduction and composition engineering are effective means to overcome these challenges. Herein, low-dimensional inorganic lead-free Cs3Bi2I9 and CsBi3I10 perovskite-like films are exploited for resistive switching memory applications. Both devices demonstrate stable switching with ultrahigh on/off ratios (approximate to 10(6)), ultralow operation voltages (as low as 0.12 V), and self-compliance characteristics. 0D Cs3Bi2I9-based device shows better retention time and larger reset voltage than the 2D CsBi3I10-based device. Multilevel resistive switching behavior is also observed by modulating the current compliance, contributing to the device tunability. The resistive switching mechanism is hinged on the formation and rupture of conductive filaments of halide vacancies in the perovskite films, which is correlated with the formation of AgIx layers at the electrode/perovskite interface. This study enriches the library of switching materials with all-inorganic lead-free halide perovskites and offers new insights on tuning the operation of solution-processed memory devices.
Two-Dimensional (c6h5c2h4nh3)2pbi4 Perovskite Single Crystal Resistive Switching Memory Devices

Jiayu Di,Zhenhua Lin,Jie Su,Jiaping Wang,Jincheng Zhang,Shengzhong Liu,Jingjing Chang,Yue Hao

DOI: https://doi.org/10.1109/led.2021.3053009

IF: 4.8157

2021-01-01

IEEE Electron Device Letters

Abstract:Organic-inorganic halide perovskite has a wide range of applications in the photoelectric field due to its excellent properties, such as high charge carrier mobility, long carrier lifetime, and high light absorption efficiency. The application of perovskite in memristor devices has been developed recently. In this work, (PEA)(2)PbI4 single crystals are prepared by a modified space restriction method, and two-dimensional (2D) perovskite single crystal memristor based on Au/(PEA)(2)PbI4/Au device structure is prepared. The current ON/OFF ratio of the device can reach 10(3) at compliance current of 10(-7) A. The electronic effect and conductive filament mechanism together constitute the working principle of the memristor device. Based on this working principle, multilevel storage can be realized in devices with different current levels.
Organic–Inorganic Perovskite Memristors: Photoassisted Electroforming Method for Reliable Low‐Power Organic–Inorganic Perovskite Memristors (adv. Funct. Mater. 17/2020)

Xiaoning Zhao,Zhongqiang Wang,Wentong Li,Shaowu Sun,Haiyang Xu,Peng Zhou,Jiaqi Xu,Ya Lin,Yichun Liu

DOI: https://doi.org/10.1002/adfm.202070111

IF: 19

2020-01-01

Advanced Functional Materials

Abstract:In article number 1910151, Haiyang Xu, Peng Zhou, Yichun Liu, and co-workers propose a photo-assisted electroforming strategy in organic–inorganic hybrid perovskite memristors. The mild method can effectively suppress the undesirable current overshoot and enable reliable low power CH3NH3PbI3-based memristors. The proposed strategy provides a simple and effective way to optimize the performance of memristors based on light-sensitive materials.
Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device

Fengzhen Lv,Tingting Zhong,Yongfu Qin,Haijun Qin,Wenfeng Wang,Fuchi Liu,Wenjie Kong

DOI: https://doi.org/10.3390/nano11061361

2021-05-21

Abstract:Light-modulated lead-free perovskites-based memristors, combining photoresponse and memory, are promising as multifunctional devices. In this work, lead-free double perovskite Cs2AgBiBr6 films with dense surfaces and uniform grains were prepared by the low-temperature sol-gel method on indium tin oxide (ITO) substrates. A memory device based on a lead-free double perovskite Cs2AgBiBr6 film, Pt/Cs2AgBiBr6/ITO/glass, presents obvious bipolar resistive switching behavior. The ROFF/RON ratio under 445 nm wavelength light illumination is ~100 times greater than that in darkness. A long retention capability (>2400 s) and cycle-to-cycle consistency (>500 times) were observed in this device under light illumination. The resistive switching behavior is primarily attributed to the trap-controlled space-charge-limited current mechanism caused by bromine vacancies in the Cs2AgBiBr6 medium layer. Light modulates resistive states by regulating the condition of photo-generated carriers and changing the Schottky-like barrier of the Pt/Cs2AgBiBr6 interface under bias voltage sweeping.
High-Performance Flexible Polymer Memristors Based on Silver Ions-Doped Polyethylenimine

Saisai Wang,Yuhan Xin,Rui Wang,Yaxiong Cao,Wanlin Zhang,Tonglong Zeng,Jing Sun,Xiaohua Ma,Hong Wang,Yue Hao

DOI: https://doi.org/10.1109/ted.2023.3341927

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:In this study, we demonstrate a robust nonvolatile memristor based on polyethylenimine (PEI) with thermally stable resistive switching behaviors by doping silver ions. This polymeric memristor exhibits remarkable performances with excellent endurance, large ON/OFF ratio, long retention time, and low working voltage. More importantly, the device depicts superior high-temperature environmental stability even when exposed to temperatures up to 100 degrees C. Moreover, the mechanical properties and typical biosynapse functions of the W/Ag/PEI-AgNO3/Pt/Ti devices on flexible substrate are successfully realized. These results reveal that the W/Ag/PEI-AgNO3/Pt/Ti memristor is promising for wearable and neuromorphic electronics.

High Performance Flexible Memristors Based on a Lead Free AgBiI4perovskite with an Ultralow Operating Voltage

Fabrication of High Quality Lead-free Double Perovskite Cs2AgBiBr6 Thin Film and its Application in Memristor with Ultralow Operation Voltage

Flexible memristors with low-operation voltage and high bending stability based on Cu2AgBiI6 perovskite

High-performance and humidity robust multilevel lead-free all-inorganic Cs3Cu2Br5 perovskite-based memristors

Low power consumption photoelectric coupling perovskite memristor with adjustable threshold voltage

Dimer-type Cs3Sb2I9: an Efficient Perovskite Material for Low Operating Voltage and High Stability Flexible Resistive Switching Memory

Controllable Volatile-to-nonvolatile Memristive Switching in Single-Crystal Lead-Free Double Perovskite with Ultralow Switching Electric Field

High Performance Full-Inorganic Flexible Memristor with Combined Resistance-Switching

High-Performance Perovskite Memristor Based on Methyl Ammonium Lead Halides

Environmentally Robust Memristor Enabled by Lead-Free Double Perovskite for High-Performance Information Storage.

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

Robust mica perovskite photoelectric resistive switching memory

High‐Performance and Environmentally Robust Multilevel Lead‐Free Organotin Halide Perovskite Memristors

Lead‐free Perovskite MASnBr3‐based Memristor for Quaternary Information Storage

Photoassisted Electroforming Method for Reliable Low‐Power Organic–Inorganic Perovskite Memristors

Flexible Resistive Switching Device Based on Air-Stable Lead-Free Cu3SbI6 Perovskite Film for Nonvolatile Memory Application

Low-Dimensional Lead-Free Inorganic Perovskites for Resistive Switching with Ultralow Bias

Two-Dimensional (c6h5c2h4nh3)2pbi4 Perovskite Single Crystal Resistive Switching Memory Devices

Organic–Inorganic Perovskite Memristors: Photoassisted Electroforming Method for Reliable Low‐Power Organic–Inorganic Perovskite Memristors (adv. Funct. Mater. 17/2020)

Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device

High-Performance Flexible Polymer Memristors Based on Silver Ions-Doped Polyethylenimine