High-Performance Perovskite Memristor Based on Methyl Ammonium Lead Halides

Kai Yan,Ming Peng,Xiao Yu,Xin Cai,Si Chen,Hsienwei Hu,Buxin Chen,Xue Gao,Bin Dong,Dechun Zou

DOI: https://doi.org/10.1039/c6tc00141f

IF: 6.4

2016-01-01

Journal of Materials Chemistry C

Abstract:High-performance memristors were fabricated based on methyl ammonium lead halide perovskite materials and achieved an on–off ratio of 1.9 × 109.

What problem does this paper attempt to address?

High‐Performance and Environmentally Robust Multilevel Lead‐Free Organotin Halide Perovskite Memristors

Zehen Liu,Hao Tang,Pengpeng Cheng,Ruyan Kang,Jian Zhou,Xian Zhao,Jia Zhao,Zhiyuan Zuo

DOI: https://doi.org/10.1002/aelm.202201005

IF: 6.2

2022-10-20

Advanced Electronic Materials

Abstract:Here, nontoxic and lead‐free PEACl‐MASnI3 (PEACl‐MASI) memristor arrays are successfully fabricated, which exhibit excellent resistive switching (RS) such as ultrahigh ON/OFF ratio, stable endurance and retention, high device yield, and multilevel storage. Memristors can remain robust in harsh environments and be fabricated on other special substrates. A complete model is proposed that quantitatively and accurately describes RS. With a striking explosion of digital information, organic–inorganic halide perovskite (OHP) memristors have been regarded as a promising solution to break the von Neumann bottleneck as the nonvolatile computing‐in‐memory architecture. However, toxicity and stability under ambient conditions are two critical issues for practical applications. Here, lead‐free MASnI3 (MASI) perovskites are reported with improved resistive switching (RS) performance via defects passivating by introducing PEACl. In‐Sn/PEACl‐MASI/PEDOT:PSS/ITO memristor arrays (10 × 10) exhibit reproducible RS with low SET/RESET voltage (VSET/VRESET, +0.58/−0.49 V), ultrahigh ON/OFF ratio (8.5 × 103), stable endurance (2 × 103 cycles), excellent retention (2 × 104 s), high device yield (88%), and multilevel storage. RS remains robust in harsh environments, including high temperature and humidity, long‐term light irradiation, and open‐air conditions. Importantly, a complete physical simulation model that quantitatively and accurately describes RS in vacancy concentration, temperature, and electric potential is proposed originating from conductive filaments formation/rupture. Additionally, PEACl‐MASI memristors are successfully fabricated on polyethylene terephthalate (PET) and Si substrates to explore the potential for large‐scale application on different substrates. The PEACl‐MASI memristors provide an opportunity to develop the next generation of high‐performance and environmentally robust multilevel information storage devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
High Performance Flexible Memristors Based on a Lead Free AgBiI4perovskite with an Ultralow Operating Voltage

Xianhua Tan

DOI: https://doi.org/10.1039/d0tc03287e

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Lead-free inorganic perovskite materials exhibit excellent memristive properties, such as high ON/OFF ratio and low switching voltage.
High-performance and humidity robust multilevel lead-free all-inorganic Cs3Cu2Br5 perovskite-based memristors

Zicong Guo,Rui Xiong,Yuanyuan Zhu,Ziyu Wang,Jing Zhou,Yong Liu,Daobin Luo,Youqing Wang,Hongjun Wang

DOI: https://doi.org/10.1063/5.0129311

IF: 3.5

2023-01-30

Physics Today

Abstract:Halide perovskites have attracted surge of interest in the memristor field due to their superior electrical property and corresponding remarkable device performances. However, the issues of toxicity and unstable properties still severely restrict their potential applications. Here, the lead-free all-inorganic perovskite Cs 3 Cu 2 Br 5 films are adopted as the switching layer to fabricate memristors with Al/Cs 3 Cu 2 Br 5 /ITO structure. The prepared Al/Cs 3 Cu 2 Br 5 /ITO memristors exhibit typical reproducible bipolar resistive switching (RS) behavior with striking characteristics, including ultralow operating voltages (0.45, −0.39 V), moderate high resistance state/low resistance state ratio (≈10 2 ), and remarkable retention time (>10 4 s). In addition, the multilevel storage capability can be achieved by controlling compliance current. The RS effect, stemming from the formation/rupture of both localized conductive Br vacancy/Al atom filaments, is proposed to illustrate the memristors. More importantly, the RS behavior of Al/Cs 3 Cu 2 Br 5 /ITO memristors maintains robustness in harsh environments with humidity up to 80%, enabling secure hardware applicable in extreme environments. This work demonstrates the opportunity for exploring the next-generation nonvolatile memories based on lead-free all-inorganic halide perovskites in future environmental-friendly and humidity robust electronics.

physics, multidisciplinary
Organic–Inorganic Perovskite Memristors: Photoassisted Electroforming Method for Reliable Low‐Power Organic–Inorganic Perovskite Memristors (adv. Funct. Mater. 17/2020)

Xiaoning Zhao,Zhongqiang Wang,Wentong Li,Shaowu Sun,Haiyang Xu,Peng Zhou,Jiaqi Xu,Ya Lin,Yichun Liu

DOI: https://doi.org/10.1002/adfm.202070111

IF: 19

2020-01-01

Advanced Functional Materials

Abstract:In article number 1910151, Haiyang Xu, Peng Zhou, Yichun Liu, and co-workers propose a photo-assisted electroforming strategy in organic–inorganic hybrid perovskite memristors. The mild method can effectively suppress the undesirable current overshoot and enable reliable low power CH3NH3PbI3-based memristors. The proposed strategy provides a simple and effective way to optimize the performance of memristors based on light-sensitive materials.
High-performance perovskite memristor by integrating a tip-shape contact

Jiangming Chen,Zihao Feng,Mingtao Luo,Junjie Wang,Zhanpeng Wang,Yue Gong,Shenming Huang,Fangsheng Qian,Ye Zhou,Su-Ting Han

DOI: https://doi.org/10.1039/d1tc04164a

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:The performance of a perovskite memristor was improved by integrating a tip-shape contact to produce a more intense electric field for regulating the growth of conductive filaments.

materials science, multidisciplinary,physics, applied
Recent Advances in Halide Perovskite Memristors: Materials, Structures, Mechanisms, and Applications

Xinyu Xiao,Jing Hu,Sheng Tang,Kai Yan,Bo Gao,Hunglin Chen,Dechun Zou

DOI: https://doi.org/10.1002/admt.201900914

IF: 6.8

2020-04-17

Advanced Materials Technologies

Abstract:<p>The memristor is the fourth fundamental circuit element discovered after resistors, capacitors, and inductors. Although this concept has only been proposed in 1971 and confirmed in 2008, many materials with memristive properties have been found since 1962. Halide perovskites have been widely used in solar cells, and recently it has been found that they also possess good memristive properties. Different halide perovskites have been applied to memristors, including 3D organic–inorganic hybrid perovskites, 2D organic–inorganic hybrid perovskites, all‐inorganic cesium/rubidium lead halide perovskites, lead‐less and lead‐free perovskites, and halide perovskite quantum dots. Flexible and fiber‐shaped halide perovskite memristors have been fabricated. Several resistive switching mechanisms of halide perovskite memristors have been proposed, and the relationships between halide perovskite memristors and perovskite solar cells have been discussed. Based on halide perovskite memristors, light‐induced resistive switching and logic gate, high‐density and cross‐bar array data storage unit, and artificial synapse have been designed. Herein, recent advances in halide perovskite memristors are comprehensively and systematically reviewed. Finally, the current challenges and potential future directions in this field are discussed.</p>

materials science, multidisciplinary
Perovskite Thin Single Crystal for a High Performance and Long Endurance Memristor

Ismael Fernandez‐Guillen,Clara A. Aranda,Pablo F. Betancur,Marta Vallés‐Pelarda,Cristina Momblona,Teresa S. Ripolles,Rafael Abargues,Pablo P. Boix

DOI: https://doi.org/10.1002/aelm.202300475

IF: 6.2

2024-02-12

Advanced Electronic Materials

Abstract:An extremely stable metal halide perovskite memristor based on thin single crystal configuration is fabricated with simple architecture and an extraordinary endurance by keeping a reasonable LRS/HRS ratio. This exceptional stability enables to analyze the electroforming process and LRS state through impedance spectroscopy, providing insights into the underlying operational mechanism. Metal halide perovskites (MHPs) exhibit electronic and ionic characteristics suitable for memristors. However, polycrystalline thin film perovskite memristors often suffer from reliability issues due to grain boundaries, while bulk single‐crystal perovskite memristors struggle to achieve high LRS/HRS ratios. In this study, a single crystal memristive device utilizing a wide bandgap perovskite is introduced, MAPbBr3, in a high surface/thickness configuration. This thin single crystal overcomes these challenges, exhibiting a remarkable LRS/HRS ratio of up to 50 and endurance of 103 cycles, representing one of the highest reported values to date. This exceptional stability enables to analyze the electroforming process and LRS through impedance spectroscopy, providing insights into the underlying operational mechanism. As far as it is known, this is the first reported thin single‐crystal MHP memristor device and the first time that the electroforming process is recorded through impedance spectroscopy. This device's outstanding stability and performance position it as a promising candidate for high‐density data storage and neuromorphic applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Fabrication of High Quality Lead-free Double Perovskite Cs2AgBiBr6 Thin Film and its Application in Memristor with Ultralow Operation Voltage

Xiaofang Zhang,Ke Wang,Zhenyu Li,Juanjuan Qi,Dongke Li,Jianqiang Luo,Jian Liu,Li Dongke

DOI: https://doi.org/10.1088/1361-6528/ad2158

IF: 3.5

2024-01-24

Nanotechnology

Abstract:Recently, the lead-free double perovskite Cs2AgBiBr6 has been considered as a promising candidate for next-generation nonvolatile memory and artificial synapse devices due to its high stability and low toxicity compared to its lead-based counterparts. In this work, we developed a simple and effective method to produce high-quality lead-free double perovskite Cs2AgBiBr6 thin films without pinholes and particles by applying a low-pressure assisted (LPA) method under ambient condition with a relative humidity (RH) of about 45%. The formation of pinholes and Ag precipitation in the perovskite Cs2AgBiBr6 films is effectively suppressed by the proper ratio of N,N-dimenthylformamide (DMF) mixed in Dimethyl sulfoxide (DMSO) solvents. Furthermore, the grain size of the Cs2AgBiBr6 films can be significantly increased by increasing the post-annealing temperature. Finally, a sandwiched structure memristor with an ITO/Cs2AgBiBr6/Ta configuration was successfully demonstrated, featuring ultralow operation voltage (VSet ~57  23 mV, VReset ~ 692  68 mV) and satisfactory memory window (the ratio of RHRS/RLRS ~ 10 times), which makes it suitable for low-power consumption information storage devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Enhanced resistive switching performance in yttrium-doped CH 3 NH 3 PbI 3 perovskite devices

Feifei Luo,Liuxia Ruan,Junwei Tong,Yanzhao Wu,Caixiang Sun,Gaowu Qin,Fubo Tian,Xianmin Zhang

DOI: https://doi.org/10.1039/d1cp02878b

IF: 3.3

2021-01-01

Physical Chemistry Chemical Physics

Abstract:In this study, yttrium-doped CH 3 NH 3 PbI 3 and pure CH 3 NH 3 PbI 3 perovskite films have been fabricated using a one-step solution spin coating method in a glove box to construct memristors.

chemistry, physical,physics, atomic, molecular & chemical
Principles, Fabrication, and Applications of Halide Perovskites‐based Memristors

Xiaozhe Cheng,Zhitao Dou,Hong Lian,Zhitao Qin,Hongen Guo,Xifeng Li,Wai‐Yeung Wong,Qingchen Dong

DOI: https://doi.org/10.1002/flm2.25

2024-01-01

Abstract:In recent decades, the microelectronics industry has developed rapidly based on the von Neumann architecture and under the guidance of Moore's law. However, as the size of electronic devices approaches the limit and power consumption increases, traditional microelectronic materials and devices are facing more and more challenges. As a new type of semiconductor material, halide perovskites (HPs) have excellent photoelectric characteristics, such as high carrier mobility, controllable band structure, etc., which have been widely used in solar cells, light emitting diodes (LEDs), photodetectors, memristors, and in other fields. Among them, the memristor, as a new type of electronic device, is very promising for in‐memory computing with low power consumption by breaking the limit of von Neumann architecture. Especially, HPs‐based memristors show outstanding photoelectric response performance, low power consumption, and flexible wearability, allowing them to hold great application potential in logical operation, polymorphic storage, and neuromorphic computing, etc. In this review, we first briefly introduce the basic characteristics and preparation methods of HPs. Secondly, the development history, device structure, and performance parameters of memristors are depicted in detail. Thirdly, the resistance mechanism and application of HPs‐based memristors are discussed. Finally, the research status and development prospects of HPs‐based memristors are outlined.
Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications

Lingzhi Tang,Yang Huang,Chen Wang,Zhenxuan Zhao,Yiming Yang,Jiming Bian,Huaqiang Wu,Zengxing Zhang,David Wei Zhang

DOI: https://doi.org/10.1039/d2tc03355k

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:We report a halide perovskite based flexible threshold-switched memristor with ultra-high speed as an artificial neuron that exhibits excellent leaky integrate-and-fire dynamics and strength-modulated spike frequency response performance.

materials science, multidisciplinary,physics, applied
Organometal tri-halide perovskite resistive switching device with PMMA electrode interlayer

Yuan Mei,Luo Wen,Xu Xiaote,Chang Kuan-Chang,Chang Ting-Chang,Liu Chuan,Zhou Hang

DOI: https://doi.org/10.1109/EDSSC.2017.8126466

2017-01-01

Abstract:Organometal halide perovskite material was investigated as a promising candidate for resistive random-access memory (RRAM). In order to improve the stability of perovskite RRAM, a polymethyl methacrylate (PMMA) interlayer was inserted between perovskite and metal electrode. High ON-OFF current ratio (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> ) and operating voltage as low as 0.5 V were achieved in the PMMA encapsulated perovskite RRAM.
CsPbBr3 Perovskite Quantum Dots Embedded in Polystyrene-poly2-vinyl Pyridine Copolymer for Robust and Light-Tunable Memristors

Qin Jiang,Yanyun Ren,Zhongjie Cui,Zili Li,Laigui Hu,Ruiqian Guo,Shukai Duan,Fengxian Xie,Guangdong Zhou,Shisheng Xiong

DOI: https://doi.org/10.1021/acsanm.3c00975

IF: 6.14

2023-01-01

ACS Applied Nano Materials

Abstract:The development of a reliable optoelectronic memristor is crucial for the success of neuromorphic vision systems, but current devices are limited by stochastic resistance switching and uncontrollable ion dynamics. To address these challenges, a core-shell nanosphere composite was synthesized using CsPbBr3 quantum dots and block copolymer polystyrene-poly2-vinyl pyridine. This memristor exhibits both negative differential resistance and resistive switching memory behavior and has demonstrated exceptional stability, withstanding over 5000 cycles and remaining stable for over 5 million seconds. It is also tunable by light irradiation, making it ideal for optoelectronic logic operations and multi-derivative state applications. The memory behavior is attributed to an electrochemical metalization mecha-nism involving the formation and annihilation of pyridine groups, conductive metal filaments, and bromide ion vacancies in S2VP filaments. This work presents an effective method for fabricating robust multi-derivative perovskite optoelectronic devices for neuromorphic computing systems. Additionally, machine learning algorithms have demonstrated accurate digital image classification and recognition using photoelectric pulse-driven neuromorphic computation with an accuracy of over 97%.
Simultaneous resistance switching and rectifying effects in a single hybrid perovskite

Xuefen Song,Junran Zhang,Yuchi Qian,Zhongjing Xia,Jinlian Chen,Hao Yin,Jing Liu,Linbo Feng,Tianyu Liu,Zihong Zhu,Yuyang Hua,You Liu,Jiaxiao Yuan,Feixiang Ge,Dawei Zhou,Mubai Li,Yang Hang,Fangfang Wang,Tianshi Qin,Lin Wang

DOI: https://doi.org/10.1002/inf2.12562

2024-06-19

InfoMat

Abstract:A perovskite self‐rectifying memristor is realized using (NHCINH3)3PbI5 as the single switching material, which exhibits the record‐low SET power consumption among all single‐material‐based self‐rectifying memristors, and demonstrates the functional application of the movement of halide ions in perovskite and the intermediate layer generated by this process. Halide perovskites with naturally coupled electron‐ion dynamics hold great potential for nonvolatile memory applications. Self‐rectifying memristors are promising as they can avoid sneak currents and simplify device configuration. Here we report a self‐rectifying memristor firstly achieved in a single perovskite (NHCINH3)3PbI5 (abbreviated as (IFA)3PbI5), which is sandwiched by Ag and ITO electrodes as the simplest cell in a crossbar array device configuration. The iodide ions of (IFA)3PbI5 can be easily activated, of which the migration in the bulk contributes to the resistance hysteresis and the reaction with Ag at the interface contributes to the spontaneous formation of AgI. The perfect combination of n‐type AgI and p‐type (IFA)3PbI5 gives rise to the rectification function like a p–n diode. Such a self‐rectifying memristor exhibits the record‐low set power consumption and voltage. This work emphasizes that the multifunction of ions in perovskites can simplify the fabrication procedure, decrease the programming power, and increase the integration density of future memory devices.

materials science, multidisciplinary
Solution-Processed Synaptic Memristors Based on Halide Perovskite Nanocrystals

Sixian Liu,Jiuhui Guan,Lei Yin,Lue Zhou,Junli Huang,Yuncheng Mu,Shuyao Han,Xiaodong Pi,Gang Liu,Pingqi Gao,Shu Zhou

DOI: https://doi.org/10.1021/acs.jpclett.2c02900

IF: 6.888

2022-01-01

The Journal of Physical Chemistry Letters

Abstract:Exploring new materials and structures to construct synaptic devices represents a promising route to fundamentally approach novel forms of computing. Nanocrystals (NCs) of halide perovskites possess unique charge transport characteristics, i.e., ionic-electronic coupling, holding considerable promise for energy-efficient and reconfigurable artificial synapses. Herein, we report solution-processed thin-film memristors from all-inorganic CsPbBr3 perovskite NCs, functioning as an electrically programmable analog memory with good stability. The devices are demonstrated to successfully emulate a number of essential synaptic functions with low power consumption, including reversible potentiation and depression, short-term plasticity (STP), paired-pulse facilitation (PPF), and long-term plasticity (LTP), such as spike-number-dependent plasticity (SNDP), spike-rate-dependent plasticity (SRDP), spike-timing-dependent plasticity (STDP), and spike-voltage-dependent plasticity (SVDP). It is proposed that a coupled capacitive and inductive phenomenon originating from charge trapping and ion migration in CsPbBr3 NC films, controlled by the amplitude and timing of the programming pulses, defines the degree of synaptic plasticity. A transition emerges from the fast trap related capacitive regime to a slow ionic inductive regime, which enables continuous change of the film resistance and the magnitude of the electronic current, analogous to the synaptic weight modulation in biological synapses.
Photoassisted Electroforming Method for Reliable Low‐Power Organic–Inorganic Perovskite Memristors

Xiaoning Zhao,Zhongqiang Wang,Wentong Li,Shaowu Sun,Haiyang Xu,Peng Zhou,Jiaqi Xu,Ya Lin,Yichun Liu

DOI: https://doi.org/10.1002/adfm.201910151

IF: 19

2020-01-01

Advanced Functional Materials

Abstract:Organic-inorganic hybrid perovskite memristors with high resistive-switching (RS) reliability and low power consumption are crucial for high-density storage and high-efficiency neuromorphic computing. However, the current overshoot in the electroforming process generally induces overgrowth of conductive filaments (CFs) and degrades the RS performance. Here, a simple photo-assisted electroforming (PAE) method to suppress the current overshoot, in which the visible light irradiation is introduced into the initial electroforming process, is proposed for the first time. As a result, a reliable memristor with reduced RS fluctuation and enhanced cycling endurance is obtained, and also, the low operating current of 0.06 mA and low powerconsumption of 0.12 mW are achieved, which are about one order of magnitude lower than those of most reported hybrid perovskite-based memristors. Further experimental evidence indicates that light irradiation plays dual roles: 1) the light-induced lowering of iodide migration barrier leads to a significant reduction of overshoot current and forming voltage; 2) the enhanced local photoconductivity of the perovskite film shares the overshoot current through the CFs. Both factors limit the total quantity of vacancy defects generated in the electroforming process, thus preventing undesirable overgrowth of the CFs. The present PAE strategy has promise for developing high-performance memristors.
Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

Hyojung Kim,Min-Ju Choi,Jun Min Suh,Ji Su Han,Sun Gil Kim,Quyet Van Le,Soo Young Kim,Ho Won Jang

DOI: https://doi.org/10.1038/s41427-020-0202-2

IF: 10.761

2020-02-28

NPG Asia Materials

Abstract:Abstract Resistive random-access memory (ReRAM) devices based on halide perovskites have recently emerged as a new class of data storage devices, where the switching materials used in these devices have attracted extensive attention in recent years. Thus far, three-dimensional (3D) halide perovskites have been the most investigated materials for resistive switching memory devices. However, 3D-based memory devices display ON/OFF ratios comparable to those of oxide or chalcogenide ReRAM devices. In addition, perovskite materials are susceptible to exposure to air. Herein, we compare the resistive switching characteristics of ReRAM devices based on a quasi-two-dimensional (2D) halide perovskite, (PEA) 2 Cs 3 Pb 4 I 13 , to those based on 3D CsPbI 3 . Astonishingly, the ON/OFF ratio of the (PEA) 2 Cs 3 Pb 4 I 13 -based memory devices (10 9 ) is three orders of magnitude higher than that of the CsPbI 3 device, which is attributed to a decrease in the high-resistance state (HRS) current of the former. This device also retained a high ON/OFF current ratio for 2 weeks under ambient conditions, whereas the CsPbI 3 device degraded rapidly and showed unreliable memory properties after 5 days. These results strongly suggest that quasi-2D halide perovskites have potential in resistive switching memory based on their desirable ON/OFF ratio and long-term stability.

materials science, multidisciplinary
In Situ Unveiling of the Resistive Switching Mechanism of Halide Perovskite-Based Memristors

Hongqiang Luo,Lihua Lu,Jing Zhang,Yikai Yun,Sijie Jiang,Yuanyuan Tian,Zhongli Guo,Shanshan Zhao,Wenjie Wei,Wenfeng Li,Beier Hu,Rui Wang,Shaoqun Li,Mengyu Chen,Cheng Li

DOI: https://doi.org/10.1021/acs.jpclett.3c03558

2024-03-07

Abstract:The organic-inorganic halide perovskite has become one of the most promising candidates for next-generation memory devices, i.e. memristors, with excellent performance and solution-processable preparation. Yet, the mechanism of resistive switching in perovskite-based memristors remains ambiguous due to a lack of in situ visualized characterization methods. Here, we directly observe the switching process of perovskite memristors with in situ photoluminescence (PL) imaging microscopy under an external electric field. Furthermore, the corresponding element composition of conductive filaments (CFs) is studied, indicating that the metallic CFs with respect to the activity of the top electrode are essential for device performance. Finally, electrochemical impedance spectroscopy (EIS) is conducted to reveal that the transition of ion states is associated with the formation of metallic CFs. This study provides in-depth insights into the switching mechanism of perovskite memristors, paving a pathway to develop and optimize high-performance perovskite memristors for large-scale applications.
Robust mica perovskite photoelectric resistive switching memory

Guanglei Zhang,Yanqing Xu,Shuai Yang,Shuxia Ren,Yinan Jiao,Ye Wang,Xuena Ma,Hao Li,Weizhong Hao,Caili He,Xiaomin Liu,Jinjin Zhao

DOI: https://doi.org/10.1016/j.nanoen.2022.108074

IF: 17.6

2022-12-05

Nano Energy

Abstract:Metal halide perovskites have attracted considerable attention for use in flexible resistive random access memory (RRAM), due to their good photoelectric regulation, high ON/OFF ratios, and low fabrication costs. Flexible conductive substrates play a crucial role in improving RRAM device performance. Herein, mica/silver nanowires welded with aluminum-doped zinc oxide (mica/) substrates with high-temperature resistance, high flexibility, high conductivity, and good stability have been successfully fabricated. The average sheet resistance 3.5 Ω sq −1 of the conductive mica substrate is 68% lower than that of a commercial PET/ITO, and it remains stable below 13.1 Ω sq −1 under 200 °C. The maximum conductivity of the mica/ substrate can reach 58 S/m after 64 h of tensile stress bending at a radius of 20 mm. Perovskite CsPbBr 3 nanocrystal (NC) RRAM is constructed on the mica/ substrate. The ON/OFF ratio 10 3 of the device in light is 10 2 times higher than that in dark under 5000 bending cycles. Flexible perovskite RRAM is a promising candidate for next-generation-logic, adaptive, non-volatile memory devices.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Size and Surface Chemistry Effects on the Synaptic Behavior of Halide Perovskite Thin Films

Shuyao Han,Lue Zhou,Junli Huang,Yuncheng Mu,Yuhao Xie,Shu Zhou

DOI: https://doi.org/10.1021/acsaelm.3c01498

IF: 4.494

2024-01-12

ACS Applied Electronic Materials

Abstract:Halide perovskites are promising for energy-efficient and reconfigurable artificial synapses due to the unique charge transport characteristic, i.e., ionic-electronic coupling. This work attempts to detangle the size and surface chemistry effects on perovskite-based synaptic memristors that remain elusive to date. Herein, three different perovskite-based memristors were constructed for mimicking the synaptic behavior: device 1 based on CsPbBr3-nanocrystal (NC) film terminated with short alky ligands, device 2 based on naked CsPbBr3-NC film, and device 3 based on CsPbBr3 bulk film. In addition to emulating a series of essential synaptic functions, our results suggest that perovskite-NC films outperform their bulk counterpart in light of paired pulse facilitation (PPF) index and gain due to an increased trap density and enhanced ion transport. The incorporation of short alkyl ligands into the NC surface decreases the film conductance without suppression of charge transport, thereby reducing the on-state energy consumption. Using the best-performed NC device comprising a neuron network, we did a preliminary proof-of-concept demonstration of the potential for brain-inspired neuromorphic computing which was proved effective for digit recognition with a high accuracy of 94%. Our study signifies the importance of grain size and surface chemistry engineering for the development of high-performance robust synaptic memristors based on halide perovskites.

materials science, multidisciplinary,engineering, electrical & electronic

High-Performance Perovskite Memristor Based on Methyl Ammonium Lead Halides

High‐Performance and Environmentally Robust Multilevel Lead‐Free Organotin Halide Perovskite Memristors

High Performance Flexible Memristors Based on a Lead Free AgBiI4perovskite with an Ultralow Operating Voltage

High-performance and humidity robust multilevel lead-free all-inorganic Cs3Cu2Br5 perovskite-based memristors

Organic–Inorganic Perovskite Memristors: Photoassisted Electroforming Method for Reliable Low‐Power Organic–Inorganic Perovskite Memristors (adv. Funct. Mater. 17/2020)

High-performance perovskite memristor by integrating a tip-shape contact

Recent Advances in Halide Perovskite Memristors: Materials, Structures, Mechanisms, and Applications

Perovskite Thin Single Crystal for a High Performance and Long Endurance Memristor

Fabrication of High Quality Lead-free Double Perovskite Cs2AgBiBr6 Thin Film and its Application in Memristor with Ultralow Operation Voltage

Enhanced resistive switching performance in yttrium-doped CH 3 NH 3 PbI 3 perovskite devices

Principles, Fabrication, and Applications of Halide Perovskites‐based Memristors

Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications

Organometal tri-halide perovskite resistive switching device with PMMA electrode interlayer

CsPbBr3 Perovskite Quantum Dots Embedded in Polystyrene-poly2-vinyl Pyridine Copolymer for Robust and Light-Tunable Memristors

Simultaneous resistance switching and rectifying effects in a single hybrid perovskite

Solution-Processed Synaptic Memristors Based on Halide Perovskite Nanocrystals

Photoassisted Electroforming Method for Reliable Low‐Power Organic–Inorganic Perovskite Memristors

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

In Situ Unveiling of the Resistive Switching Mechanism of Halide Perovskite-Based Memristors

Robust mica perovskite photoelectric resistive switching memory

Size and Surface Chemistry Effects on the Synaptic Behavior of Halide Perovskite Thin Films