Abstract:Multifunctional memristors coexisting non‐volatile memory and volatile threshold switching behaviors are introduced based on an innovative Ag–In–Zn–S/Cs3Cu2Cl5 heterostructure. The device is capable of imitating essential biological synaptic functions and conditioning Pavlov's dog experiment. The resulting high classification accuracies for small and large digits datasets are achieved via a three‐layer neural network training based on the experimentally measured device's conductance states. Lead‐free all‐inorganic Cs3Cu2Cl5 perovskites, a member of the metal‐metal halide material family, have attracted pronounced attention owing to their low toxicity, facile fabrication strategies, considerable ambient stability, and intriguing photoelectric properties. However, the application of environmentally friendly copper‐based Cs3Cu2Cl5 in memristors has been rarely reported to the authors' knowledge. Herein, multifunctional memristors with the coexistence of non‐volatile memory (MS) and volatile threshold switching (TS) behaviors are introduced based on an innovative Ag–In–Zn–S/Cs3Cu2Cl5 heterostructure. The inserted Ag–In–Zn–S quantum dots layer may provide an effective method for guiding the formation of the dominant metallic Ag filaments, resulting in considerably stable and controllable multiple switching behaviors. Additionally, the heterostructure memristor is capable of imitating some essential biological synaptic functions, including long‐term potentiation (LTP), long‐term depression (LTD), and the short‐term memory (STM) to long‐term memory (LTM) transition. Furthermore, the famous conditioning Pavlov's dog experiment corresponding to associative learning is electronically simulated by the studied device. Moreover, utilizing the devices' LTP and LTD properties, relatively high recognition accuracies for small and large digits datasets are achieved through a three‐layer artificial neural network, revealing the feasibility of implementing neuromorphic computation using heterostructure memristors.

Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications

Energy-Efficient, Stable and Temperature-Tolerant Neuromorphic Device Based on Single Crystals of Halide Perovskites

Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity

Solution-Processed Synaptic Memristors Based on Halide Perovskite Nanocrystals

Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing

Leaky integrate-and-fire neurons based on perovskite memristor for spiking neural networks

Low-power perovskite-based threshold switching memristor for artificial nociceptor

A multilevel resistive switching memristor based on flexible organic-inorganic hybrid film with recognition function

A Leaky Integrate-and-Fire Neuron Based on Hexagonal Boron Nitride (h-BN) Monocrystalline Memristor

HfO2-based memristor-CMOS hybrid implementation of artificial neuron model

Integrated Artificial Neurons from Metal Halide Perovskites

Electrohydrodynamically Printed Flexible Organic Memristor for Leaky Integrate and Fire Neuron

Multifunctional Ag–In–Zn–S/Cs3Cu2Cl5‐Based Memristors with Coexistence of Non‐Volatile Memory and Volatile Threshold Switching Behaviors for Neuroinspired Computing

Optoelectronic bio-synaptic plasticity on neotype kesterite memristor with switching ratio >104

Flexible Memristor Based on Lead‐Free Cs2AgBiBr6 Perovskite for Artificial Nociceptors and Information Security

Artificial Neurons Based on Ag/V2C/W Threshold Switching Memristors

An Artificial Neuron Based on a Threshold Switching Memristor

Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing

A zinc oxide-based threshold switching memristor for simulating synaptic plasticity and artificial nociceptor

Artificial Neurons and Synapses Based on Al/a-SiNxOy:H/P+-Si Device with Tunable Resistive Switching from Threshold to Memory

Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications