Abstract:Optical waveguides with semiconductor cores are drawing considerable research interest in the domain of supercontinuum (SC) generation in recent times. In this work, we design a square-core silicon nitride buried waveguide with a silica-clad, aiming for a wideband spectrum generation in the mid-IR region when operated at the standard telecommunication wavelength of 1550 nm. Among different such silicon nitride square-core buried waveguides, we propose a typical design with dimensions of 400 nm × 400 nm along its height and width, capable of producing a highly coherent broadband intensity spectrum ranging from 810 nm to 5441 nm after propagating through just a few millimeters of the waveguide. The group velocity dispersion maintains minimal value over a broad wavelength range in the mid-IR region, while the nonlinear coefficient is estimated to be sufficiently high. The nonlinear pulse propagation through such a waveguide leads to achieving an SC spanning over 2.76 octaves, sufficiently broader than previously reported silicon nitride-based waveguides. Furthermore, our calculations confirm the highly coherent nature of the generated SC. To the best of our knowledge, this is the first report of SC generation maintaining a high degree of coherence over such a wide wavelength range in the mid-IR zone using a square-core silicon nitride buried waveguide.

Three-Octave Supercontinuum Generation Using SiO2 Cladded Si3N4 Slot Waveguide with All-Normal Dispersion

Flat and Coherent Supercontinuum Generation in Si3N4 Slot Waveguide with All-Normal Dispersion

Numerical Study on Flat Dispersion in a Single-Layer Si3N4 Coupled-Waveguides with Four Zero-Dispersion Wavelengths for Supercontinuum Generation

Broadband Mid-Infrared Supercontinuum Generation in Dispersion-Engineered As2S3-silica Nanospike Waveguides Pumped by 2.8 Μm Femtosecond Laser

Silicon waveguide with four zero-dispersion wavelengths and its application in on-chip octave-spanning supercontinuum generation.

Octave-spanning supercontinuum generation in a CMOS-compatible thin Si3N4 waveguide coated with highly nonlinear TeO2

Supercontinuum generation in dispersion engineered highly doped silica glass waveguides

On-chip Two-Octave Supercontinuum Generation by Enhancing Self-Steepening of Optical Pulses

Efficient dispersion engineering for three-octave-spanning supercontinuum generation in nanophotonic waveguides

On-chip octave-spanning flat supercontinuum in all-normal-dispersion silicon nitride waveguides

Supercontinuum Generation in Dispersion Engineered 4H-Sic-on-insulator Waveguides at Telecom Wavelengths

Supercontinuum generation assisted by dispersive waves trapping in dispersion-managed integrated silicon waveguides

Mid-IR Supercontinua in Dispersion-Engineered As2S3-silica Nanospike Waveguides Pumped by Fs Pulses at 2.8 M

Soliton-Induced Mid-Infrared Dispersive Wave in Horizontally-Slotted Si3N4 Waveguide

Soliton-induced mid-infrared dispersive wave in horizontally-slotted Si<sub>3</sub>N<sub>4</sub> waveguide

Octave-spanning Flat Negative Dispersion in Silicon Nitride Horizontal Slot Waveguides

Tailoring Of Low Chromatic Dispersion Over A Broadband In Silicon Waveguides Using A Double-Slot Design

Dispersion Engineering of a Silicon-Nanocrystal-based Slot Waveguide for Broadband Wavelength Conversion

Highly coherent mid-infrared wideband supercontinuum generation by a silica cladded silicon nitride core buried waveguide

Octave-spanning supercontinuum generation in a CMOS-compatible thin Si_3N_4 waveguide coated with highly nonlinear TeO_2

Supercontinuum generation in high-index doped silica photonic integrated circuits under diverse pumping settings