Abstract:Optical sources emitting in the ultraviolet (UV) to near-infrared wavelength range are an enabling tools for a wide variety of applications. To achieve broadband coherent generation within visible and UV spectrum, one fundamental obstacle is the strong material dispersion which limits efficient frequency conversion. Previous works have addressed this challenge by either using high input energies or delicate resonant structures. In this work, a simple device system is proposed to tackle the problem. Single crystalline aluminum nitride material with a threading dislocation density less than 109 cm–2 was used to provide broadband transparency, and a high order waveguide mode (transverse electric, TE10) was used to create anomalous dispersion near 800 nm, in which soliton fission processes are supported. As a result, supercontinuum generation from 490 nm to over 1100 nm with a second harmonic generated band covering from 407 to 425 nm is achieved with the total on-chip pulse energy of 0.6 nJ.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsphotonics.0c01785?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsphotonics.0c01785</a>.Atomic force microscopy, ellipsometry, schematic of process flow, SEM images, propagation loss, estimation of propagation loss, laser-induced material damage, dyadic Green's function for loss estimation, and supplementary experimental data (<a class="ext-link" href="/doi/suppl/10.1021/acsphotonics.0c01785/suppl_file/ph0c01785_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Octave-spanning supercontinuum generation in a CMOS-compatible thin Si_3N_4 waveguide coated with highly nonlinear TeO_2

Octave-spanning supercontinuum generation in a CMOS-compatible thin Si3N4 waveguide coated with highly nonlinear TeO2

Supercontinuum generation based on nanofiber

Low-threshold supercontinuum generation in semiconductor nanoribbons by continuous-wave pumping.

On-chip octave-spanning flat supercontinuum in all-normal-dispersion silicon nitride waveguides

Supercontinuum generation in high-index doped silica photonic integrated circuits under diverse pumping settings

Broadband Mid-Infrared Supercontinuum Generation in Dispersion-Engineered As2S3-silica Nanospike Waveguides Pumped by 2.8 Μm Femtosecond Laser

Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Mid-IR Supercontinua in Dispersion-Engineered As2S3-silica Nanospike Waveguides Pumped by Fs Pulses at 2.8 M

Quasi-phase-matched Supercontinuum-Generation in Photonic Waveguides

Two octave supercontinuum generation in a non-silica graded-index multimode fiber

Supercontinuum generation assisted by dispersive waves trapping in dispersion-managed integrated silicon waveguides

CMOS compatible TeO2—coated Si3N4 inverse parabolic rib waveguide for on-chip supercontinuum generation and high resolution OCT

Generation of A Telecom-To-Mid-Infrared Spanning Supercontinuum Using Silicon-On-Insulator Wire Waveguides

Supercontinuum Generation in High Order Waveguide Mode with near-Visible Pumping Using Aluminum Nitride Waveguides

Supercontinua from integrated gallium nitride waveguides

Conventional-band and long-wavelength-band efficient wavelength conversion by difference-frequency generation in sinusoidally chirped optical superlattice waveguides

Nanoscale Octave-spanning Coherent Light Generation

Inverse design of coherent supercontinuum generation using free-form nanophotonic waveguides

On-Chip Phase-Shift Induced Control of Supercontinuum Generation in a Dual-Core Si$\mathbf{_{3}}$N$\mathbf{_{4}}$ Waveguide

Two-Octave-Spanning Supercontinuum Generation in Gallium Nitride Waveguides