Effects of boron doping on the growth characteristic of diamond film

WP Liu,QX Yu,YQ Tian,Y Liao,GZ Wang,RC Fang
DOI: https://doi.org/10.3321/j.issn:1000-324X.2005.05.040
IF: 1.292
2005-01-01
Journal of Inorganic Materials
Abstract:Boron-doped diamond thin films, synthesized by the HFCVD method, were analyzed by SEM and XRD. The results show that, when the boron concentration in the films increases, the crystallite orientation changes from (100) to (111), then tends to disorder. The doping of boron reduces the growth parameter alpha. The stress in the films is relaxed by twin crystals in the boron do ping films. Consequently the shift of center phonon line of Raman spectrum becomes smaller.
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