Abstract:As a pillar material of semiconductors, single-crystal silicon (Si) has attracted much attention due to its excellent electronic properties. Meanwhile, femtosecond laser processing as a convenient fabrication method for miniaturized structures provides an effective way to improve the performance of Si-based devices. However, the final-state analysis of femtosecond laser-induced Si micro-nano structures remains to be explored. In this study, the evolution of the micro-nano structures and the variation of surface and subsurface damage with pulse number were studied. Based on the atomic structure, the amorphous layer, dislocation layer, and unaffected layer were found. The amorphous layer resulted from the re-solidification of melted materials. The dislocation layer consisted of dislocations and lattice distortion. The unaffected layer retained the initial lattice structure and was not affected by laser irradiation. The high temperature and stress induced by multiple pulses led to the stacking faults and nano-twins in the subsurface layer. The evolution of the Si structure was essentially a transition process from a dislocation layer to a high-density defect layer and a transition process from nanotips to laser-induced periodic surface structures. During this process, dislocations dominated the femtosecond laser-induced microstructural deformation, affecting the nano-hardness of the irradiated surface. As a result, the nano-hardness of Si structures fabricated using femtosecond laser processing was maximally enhanced by 9.54%. This work provides new information about ultrafast laser-induced surface and subsurface damage, which is significant for the efficient and high-precision fabrication of Si-based functional micro-nano devices.

Time-resolved Temperature Measurement and Numerical Simulation of Superposed Pulsed Nd:YAG Laser Irradiated Silicon

Laser-Induced Damage Threshold of Silicon under Combined Millisecond and Nanosecond Laser Irradiation

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Surface Damage Induced by A Combined Millisecond and Nanosecond Laser

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Thermal Damage of Monocrystalline Silicon Irradiated by Long Pulse Laser

Investigation of the Transient Phase Change of Silicon Irradiated by CW Fiber Laser

Experimental study of the damage morphology induced by the millisecond–nanosecond combined-pulse laser with different pulse delay on silicon

Three-temperature modeling of laser-induced damage process in silicon

Laser-induced Damage in a Silicon-Based Photodiode by MHz Picosecond Laser

Theoretical and Experimental Study of Laser Induced Damage on Gaas by Nanosecond Pulsed Irradiation

Study of Thermal Distribution of Silicon Materials Irradiated by High Power Laser

Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change

One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

The Experimental and Modeling Study of Femtosecond Laser-Ablated Silicon Surface

Time-resolved Dynamics of 355-Nm Laser-Irradiated Surface Damage on Fused Silica

Laser Thermal Effect on Silicon Nitride Ceramic Based on Thermo-Chemical Reaction with Temperature-Dependent Thermo-Physical Parameters

[Emission Spectrum Analysis of Laser Ablation on the Silicon Surface].

Numerical simulation and validation of subsurface modification and crack formation induced by nanosecond-pulsed laser processing in monocrystalline silicon

The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser

Delayed Phase Explosion During High-Power Nanosecond Laser Ablation of Silicon