Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Step Morphology of Liquid Phase Epitaxial Gaas Determined by Atomic Force Microscopy

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Step Bunching Formation On Gaas(001) Introduced By Surface Reconstruction

Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions

A Binary Phase Field Crystal Study for Liquid Phase Heteroepitaxial Growth

Surface Morphology of GaAs(001) Grown by Solid- and Gas-Source Molecular Beam Epitaxy

Surface Morphology During Multilayer Epitaxial Growth of Ge(001).

Effect of Growth Rate on Morphology Evolution of 4H-Sic Thick Homoepitaxial Layers

Atomic Force Microscopy Study of GaN Grown on Al2O3(0001) by LP-MOVPE

Observation of the Morphological Evolution of GaAs Pyramidal Microtips Grown by Selective Liquid-Phase Epitaxy

Controllable step-flow growth of GaN on patterned freestanding substrate

Surface Chemistry and Growth Mechanisms Studies of Homo Epitaxial (100) Gaas by Laser Molecular Beam Epitaxy

Morphology of Mbe Grown Inas Films Studied by Atomic Force Microscope

A Study on the Growth Process for Liquid Phase Epitaxy of GaN Crystal Using Na–Li–Ca Flux

Analysis of GaN Crystal Growth Mechanism in Liquid-Phase Epitaxial Na-flux Method

Atomic Force Microscopy On The Ga0.16in0.84as0.80sb0.20 Epilayer Grown By Metalorganic Chemical Vapor Deposition

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

Growth and Liquid-Phase Exfoliation of GaSe1-xSx Crystals

Effects Of Lattice Steps In Surface Diffusion And Epitaxial Growth

Macrosteps dynamics and the growth of crystals and epitaxial layers

Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching