Step‐climbing Epitaxy of Layered Materials with Giant Out‐of‐plane Lattice Mismatch
Xuehan Zhou,Yan Liang,Huixia Fu,Ruixue Zhu,Jingyue Wang,Xuzhong Cong,Congwei Tan,Congcong Zhang,Yichi Zhang,Yani Wang,Qijia Xu,Peng Gao,Hailin Peng
DOI: https://doi.org/10.1002/adma.202202754
IF: 29.4
2022-07-31
Advanced Materials
Abstract:Heteroepitaxy with large lattice mismatch remains a great challenge for high‐quality epifilm growth. Although great efforts have been devoted to epifilm growth with an in‐plane lattice mismatch, the epitaxy of two‐dimensional (2D) layered crystals on stepped substrates with a giant out‐of‐plane lattice mismatch is seldom reported. Here, taking the molecular beam epitaxy of 2D semiconducting Bi2O2Se on three‐dimensional SrTiO3 substrates as an example, we propose a step‐climbing epitaxy growth strategy, in which the nth (n = 1, 2, 3...) epilayer climbs the step with height difference from out‐of‐plane lattice mismatch and continues to grow the n+1th epilayer. Step‐climbing epitaxy can spontaneously relax and release the strain from the out‐of‐plane lattice mismatch, which ensures the high quality of large‐area epitaxial films. Wafer‐scale uniform 2D Bi2O2Se single‐crystal films with controllable thickness can be obtained via step‐climbing epitaxy. Most notably, one‐unit‐cell Bi2O2Se films (1.2 nm thick) exhibit a high Hall mobility of 180 cm2/Vs at room temperature, which exceeds that of silicon and other 2D semiconductors with comparable thickness. As an out‐of‐plane lattice mismatch is generally present in the epitaxy of layered materials, the step‐climbing epitaxy strategy expands the existing epitaxial growth theory and provides guidance toward the high‐quality synthesis of layered materials. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology