Abstract:Two-dimensional (2D) photodetectors based on semiconducting transitional metal chalcogenides (TMDs) have attracted much attention because of its unique mechanical and opto-electronic properties which can be integrated into nanoscale-sized opto-electronic devices and complex circuits. However, the photodetection range of 2D TMDs materials based detectors are generally limited within the visible range due to its intrinsic relatively large band-gap. In addition, 2D TMDs materials also suffers from weak light absorption inherited from their atomically thin layers, resulting in a photoresponsivity that can be further improved. Herein, by combining 2D MoS2 with zero-dimensional (0D) PbSe quantum dots (QDs) and Au nanocrystals (NCs), a novel 2D-0D photo detector (i.e., MoS2/PbSe@Au) is fabricated. Our MoS2/PbSe@Au photodetector exploits the 2D MoS2 as the conduction channels and PbSe@Au NCs as light sensitizer, which promote the absorption of the entire device and enable appreciable photodetection extending to the near-infrared (NIR). Prominently, the mixed-dimensional photodetector exhibits high responsivity of 1.22 A/W and detectivity of 1.56*10(9) Jones (cm.Hz(1/2).W-1) at NIR (e.g., 1064 nm) compared with the MoS2 photodetector with PbSe QDs only, which are ascribed to the more efficient two-step charge transfer process between PbSe and MoS2 with the presence of Au NCs. We further identify the new carrier multiplication mechanism when comparing the photoresponse of our photodetectors at 405 nm and 635 nm. We found the extremely high EQE of MoS2/PbSe@Au photodetector at the wavelength of 405 nm (268.1%) could be ascribed to the synergism of carrier multiplication (CM) in PbSe QDs and the photo gating effect induced by Au nanoparticles. Our study demonstrates that the novel mixed-dimensional photodetectors based on CVD-grown MoS2 may provide a new route for designing and realizing high-performance optoelectronic devices with harvesting merits of hybrid nanomaterials.

The Photoresponsivity of Monolayer Molybdenum Disulfide Grown by Chemical Vapor Deposition with Different Seeding Promoters

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

Scaling Analysis of High Gain Monolayer MoS 2 Photodetector for Its Performance Optimization

A New Strategy to Improve the Performance of MoS2-based 2D Photodetector by Synergism of Colloidal CuInS2 Quantum Dots and Surface Plasma Resonance of Noble Metal Nanoparticles

Influence of seeding promoters on the properties of CVD grown monolayer molybdenum disulfide

Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

High response and broadband photodetection by monolayer MoSe2 with vanadium doping and Mo vacancies

Growth and Photoresponse of WS2/MoSe2 Lateral Heterostructure

High Performance Optoelectronics Based on CVD MoS2

High performance photodetectors constructed on atomically thin few-layer MoSe2 synthesized using atomic layer deposition and a chemical vapor deposition chamber

Ultrahigh Photoresponsivity MoS2 Photodetector with Tunable Photocurrent Generation Mechanism.

Mechanisms of photoconductivity in atomically thin MoS2

Tune the photoresponse of monolayer MoS2 by decorating CsPbBr3 perovskite nanoparticles

A modified CVD method for the synthesis of monolayer MoS2 and photoelectric improvement by HfO2 passivation

Controlled growth of vertically stacked In2Se3/WSe2 heterostructures for ultrahigh responsivity photodetector

Synthesis of Few-Layer 2H-Mose2 Thin Films with Wafer-Level Homogeneity for High-Performance Photodetector

High-performance photodetector and its optoelectronic mechanism of MoS2/WS2 vertical heterostructure

High-responsivity molybdenum diselenide photodetector with dirac electrodes

Multi‐Controllability of Ambipolar Photoconductivity in Transition Metal Dichalcogenides Van der Waals Heterostructures

Epitaxial growth of bilayer MoS2/MoSe2 heterostructure with high-responsivity enhanced by photogating effect

Visible-Light Self-Powered Photodetector with High Sensitivity Based on the Type-II Heterostructure of CdPSe 3 /MoS 2