Abstract:Abstract Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer. Understanding CF formation kinetics is critical to achieving optimal functionality of RRAM. Here a phase-field model is developed, based on materials properties determined by ab initio calculations, to investigate the role of electrical bias, heat transport and defect-induced Vegard strain in the resistive switching behavior, using MO 2− x systems such as HfO 2− x as a prototypical model system. It successfully captures the CF formation and resultant bipolar resistive switching characteristics. High-throughput simulations are performed for RRAMs with different material parameters to establish a dataset, based on which a compressed-sensing machine learning is conducted to derive interpretable analytical models for device performance (current on/off ratio and switching time) metrics in terms of key material parameters (electrical and thermal conductivities, Vegard strain coefficients). These analytical models reveal that optimal performance (i.e., high current on/off ratio and low switching time) can be achieved in materials with a low Lorenz number, a fundamental material constant. This work provides a fundamental understanding to the resistive switching in RRAM and demonstrates a computational data-driven methodology of materials selection for improved RRAM performance, which can also be applied to other electro-thermo-mechanical systems.

Resistive Memory Based on Single-Crystalline Black Phosphorus Flake/hfoxstructure

Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics.

High On/off Ratio Black Phosphorus Based Memristor with Ultra-Thin Phosphorus Oxide Layer

Novel 2D Materials-based Resistive Devices

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field Effect Transistors with Van Der Waals Buffer.

Interface Engineering With Mos2-Pd Nanoparticles Hybrid Structure For A Low Voltage Resistive Switching Memory

2D Resistive Switching Memories: Graphene and Related Materials for Resistive Random Access Memories (adv. Electron. Mater. 8/2017)

Floating-gate Controlled Programmable Non-Volatile Black Phosphorus PNP Junction Memory.

Resistive Switching of Self-Assembly Stacked H-Bn Polycrystal Film

Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

The storage mechanism of resisitive random access

Design of a Two-Layer Structure to Significantly Improve the Performance of Zinc Oxide Resistive Memory

Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device

Realization of A Non-Markov Chain in A Single 2D Crystal RRAM

Forming Free and Ultralow-Power Erase Operation in Atomically Crystal Tio2 Resistive Switching

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus-Boron Nitride-Mos2 Heterostructures

Large-area multilayer molybdenum disulfide for 2D memristors