First-principles Study on Sb-doped SnS2 As a Low Cost and Non-Toxic Absorber for Intermediate Band Solar Cell

Yang Xue,Wentong Zhou,Lijie Ding,Jingwen Jiang,Hua Ning,Xianqing Liang,Wenzheng Zhou,Jin Guo,Dan Huang
DOI: https://doi.org/10.1016/j.physleta.2020.126695
IF: 2.707
2020-01-01
Physics Letters A
Abstract:Tin disulfide has attracted much attention on solar cell study due to its excellent optoelectronic properties in addition to just containing low-cost and non-toxic elements. Based on the HSE06-hybrid function calculations combined with Grimme's dispersion-correction method, a half-filled and delocalized intermediate band(IB) is presented in the main band gap of SnS(2 )after partially Sb substituting on Sn site, which is made of the antibonding states of Sb-s and S-p states. Three-photon absorption can be realized in the doped sample and its corresponding absorption coefficient is enhanced at the visible light region thanks to the isolated and half-filled IB above the original valence band. Furthermore, Sbs(n) always has the lowest formation energy than other Sb-related defects (i.e. Sb-s and Sb-i) based on the defect formation energy calculations. Therefore, Sb-doped SnS2 is suggested as a promising candidate for the absorber of intermediate band solar cell. (C) 2020 Elsevier B.V. All rights reserved.
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