InCl3-modified SnO2 as Electron Transporting Layer for Cd-free Antimony Selenide solar cells
Lei Huang,Junjie Yang,Yujian Xia,Peng Xiao,Huiling Cai,Aoxing Liu,Yan Wang,Xiaosong Liu,Rongfeng Tang,Changfei Zhu,Tao Chen
DOI: https://doi.org/10.1039/d3ta03358a
IF: 11.9
2023-07-21
Journal of Materials Chemistry A
Abstract:Solar cells based on Sb2Se3 have attracted increasing attention due to its excellent optoelectronic properties and low-cost fabrication. Up to now, high-efficiency Sb2Se3 solar cells with superstrate structure always use CdS as electron transport layer (ETL). However, the parasitic absorption caused by CdS reduces the light absorption of Sb2Se3 absorber layer, combined with the toxicity of Cd element, jointly enabling its limitation in practical application. Tin oxide (SnO2) is a wide-bandgap ETL, and has been widely used in solar cells due to its suitable energy level, high electron mobility, and good stability. However, the Sb2Se3 films deposited on metal oxide always exhibit poor quality. In this study, we demonstrate a facile strategy to improve the quality of Sb2Se3 film by modifying the SnO2 layer with InCl3. We find that the InCl3 post-treatment can optimize the band alignment between SnO2 and Sb2Se3, improve the quality of SnO2/Sb2Se3 heterojunction, as well as reduce the deep-level defects. As a result, the PCE improves from 1.51% to 5.52%. Thus, this work offers a simple and effective way to improve the quality of Sb2Se3 film deposited on SnO2 ETLs, and provides a new path towards fabricating non-toxic Sb2Se3 solar cells.
materials science, multidisciplinary,chemistry, physical,energy & fuels