High Order Laterally-Coupled Distributed-Feedback GaSb-Based Diode Lasers at 1.9 mu m Wavelength

Huan Li,Sheng-wen Xie,Yu Zhang,Shu-Shan Huang,Jin-Liang Wang,Zhi-Chuan Niu
DOI: https://doi.org/10.1007/978-981-13-0110-0_39
2018-01-01
Abstract:We reported on GaSb-based laterally coupled distributed-feedback (LC-DFB) quantum well lasers. The lateral grating of the LC-DFB lasers were patterned along both sidewalls of the ridge waveguide. Gratings with higher order could enhance the lithographic tolerance for lower resolution patterning, yielding lasers more amenable to mass-manufacturing. The lasers emitting wavelength was at 1.9 mu m in a single longitudinal mode at room temperature. A low wavelength dependent current tuning coefficient of 0.13 nm/mA was measured for the laser output. We obtained high output power of 13.6 mW, which were suitable for gas analysis.
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