Abstract:The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards ultra-high-performance semiconductor lasers for many key novel applications, either as stand-alone sources or as on-chip sources in photonic integrated circuits. However, the fabrication of conventional buried Bragg grating structures on GaAs, GaAs/Si, GaSb and other material platforms have been met with major material regrowth difficulties. We report a novel and universal approach of introducing laterally coupled dielectric Bragg gratings to semiconductor lasers that allows highly controllable, reliable and strong coupling between the grating and the optical mode. We implement such a grating structure in a low-loss amorphous silicon material alongside GaAs lasers with InAs/GaAs QD gain layers. The resulting DFB laser arrays emit at pre-designed 0.8 THz LWDM frequency intervals in the 1300 nm band with record performance parameters, including side mode suppression ratios as high as 52.7 dB, continuous-wave output power of 27.7 mW (room-temperature) and 10 mW (at 70°C), and ultra-low relative intensity noise (RIN) of < -165 dB/Hz (2.5-25 GHz). The devices are also capable of operating isolator-free under very high external reflection levels of up to -12.3 dB whilst maintaining the high spectral and ultra-low RIN qualities. These results validate the novel laterally coupled dielectric grating as a technologically superior and potentially cost-effective approach for fabricating DFB and DBR lasers free of their semiconductor material constraints, thus universally applicable across different material platforms and wavelength bands.

High-power, High-Spectral-purity GaSb-based Laterally Coupled Distributed Feedback Lasers with Metal Gratings Emitting at 2 Μ M

High power GaSb-based distributed feedback laser with laterally coupled dielectric gratings at 1.95μm

Single-lobe, Surface-Normal Beam Surface Emission from Second-Order Distributed Feedback Lasers with Half-Wave Grating Phase Shift

High-Power Laterally Coupled Distributed Feedback Lasers with Metal Gratings Around $2~\mu$ M

Emission characteristics of surface second-order metal grating distributed feedback semiconductor lasers

High performance distributed feedback quantum dot lasers with laterally coupled dielectric grating

Fabrication of GaSb-based Distributed Bragg Reflector Semiconductor Lasers

Single-mode Distributed Bragg Reflector Lasers at 2.08Μm

1.55-/Spl Mu/m AlGaInAs-InP Laterally Coupled Distributed Feedback Laser

Gain-coupled 770 Nm DFB Semiconductor Laser Based on Surface Grating

Study of Gain-Coupled Distributed Feedback Laser Based on High Order Surface Gain-Coupled Gratings

1.3 Μm 10-Wavelength Laterally Coupled Distributed Feedback Laser Array with High-Duty-Ratio Gratings

Distributed Bragg Reflector Lasers Emitting Around 2.3Μm

Design and Fabrication of 980 Nm Distributed Bragg Reflection Semiconductor Laser with High Power

Second-Order Distributed Feedback Quantum Cascade Lasers at 7.8μm

Fabrication of High-Power 2μm GaSb-based Laser

975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

High Power 980-Nm Broad-Area Lasers with Distributed Bragg Reflection Grating

GaAlAs/GaAs multiquantum well gain-coupled distributed feedback lasers with absorptive gratings all grown by MBE

GaSb-Si3N4 hybrid lasers with precise wavelength control and narrow spectral linewidth based on low-kappa Bragg gratings

1.3 Μm Laterally Coupled Distributed Feedback Laser with High Side Mode Suppression Ratio and Bandwidth