Fabrication of GaSb-based Distributed Bragg Reflector Semiconductor Lasers

Cheng-Ao Yang,Sheng-Wen Xie,Yi Zhang,Jin-Ming Shang,Ye Yuan,Fu-Hui Shao,Shu-Shan Huang,Qing-Xuan Jia,Yu Zhang,Ying-Qiang Xu,Zhi-Chuan Niu
DOI: https://doi.org/10.1117/12.2533003
2019-01-01
Abstract:We report on the fabrication of GaSb-based type-I quantum well distributed Bragg reflector (DBR) lasers operating in the 2-μm region. Second-order metallic gratings of chromium are patterned by electron beam lithography. The fabricated DBR lasers emit a single-mode continuous wave at 2.04 μm. The side mode suppression ratio (SMSR) is as high as 35dB with a narrow line-width of 37MHz. The devices show a stable single mode operation with current tuning rate of 0.006nm/mA.
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