KINETICS ON THE THERMAL DEPOSITION OF COPPER(II) ACETYLACETONATE

ZR LIAN,ZK JIN,QZ QIN
1992-01-01
Acta Chimica Sinica
Abstract:The studies on the thermal deposition of transition metal coordination compounds have been directly motivated by the development of organometallic chemical vapor deposition (OMCVD) technique. Among these compounds Cu(II) acetylacetonate, Cu(acac)2, is a potentially important precursor for the deposition of Cu film and preparation of high T(c) superconducting films. However, little information about the kinetics of thermal decomposition of this compound is available. In this paper we report a kinetic study on the deposition of copper film by decomposing Cu(acac)2. A CW CO2 laser is used to heat a quartz substrate and to induce thermal decomposition on the surface. The deposition rate is measured in situ by monitoring the transmittance of the Cu film on the substrate with a He-Ne laser. As the CO2 laser beam only heats the quartz window, the temperature of the reaction cell can be controlled. The dependence of the deposition rate on the laser intensity is determined at a given vapor pressure of Cu(acac)2 and a laser intensity threshold has been observed. Above the threshold the deposition rate increases linearly with laser intensity in the low intensity region. The laser-induced temperature rise of the substrate and the deposition rate constant have been calculated. The Arrhenius plot is linear and the activation energy for thermal deposition of Cu(acac)2 is 181 +/- 19 kJ. mol-1. In higher laser intensity region the deposition rate becomes independent on the laser intensity, but is a function of the vapor pressure of Cu(acac)2. The decomposition of Cu(acac)2 has been found to be first order. The rate-controlling stop seems to be the surface reaction on the substrate at low laser intensity, while the transport of precursor molecules is crucial at high laser intensity.
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