Abstract:We studied the growth of InAs/InGaP quantum dot (QD) solar cells with near ideal bandgaps for intermediate band solar cells. Using a solid-source molecular beam epitaxy system, the evolution of InAs QDs grown on an InGaP buffer layer was examined as a function of InAs coverage and growth temperature. QDs were initiated with defective clusters for InAs deposition as small as 0.3 monolayer. The cross diffusion of In atoms and As–P exchange between InAs and the InGaP buffer layer could be responsible for the formation of coherent QDs and large defective clusters. An AlGaAs interlayer was inserted between InAs and the InGaP buffer layer to prevent the surface exchange reactions between InAs and InGaP. As a result, InAs QDs with a density of 1×1011cm−2 have been demonstrated with stronger photoluminescence emission compared to those with the GaAs interlayer. This growth technique was applied to fabricate InAs/InGaP QD solar cells. Post-growth annealing treatment was also investigated to improve the performance of QD solar cells.

The Fabrication and Properties of Inas/Gaas Columnal Islands

Fabrication of InGaAs Quantum Dot 2D-Arrays on GaAs(001) by MBE

Inas Self-Assembled Quantum Dots Grown On An Inp (311)B Substrate By Molecular Beam Epitaxy

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Fabrication Of Ingaas Quantum Dots With An Underlying Ingaalas Layer On Gaas(100) And High Index Substrates By Molecular Beam Epitaxy

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Characteristic Study of Inas Self-Assembled Quantum Dots on Gaas/Inp

Spontaneously Ordered InAs Self-Assembled Quantum Dots Grown on GaAs/InP Substrate

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

Selective Growth of InAs Islands on Patterned GaAs (100) Substrate

Liquid Phase Epitaxy of Al0.3Ga0.7As Islands

Studying the Mechanism of Ordered Growth of InAs Quantum Dots on GaAs/InP

Fabrication of Ultra-Low Density and Long-Wavelength Emission Inas Quantum Dots

Ingaas/Gaas Three-Dimensionally-Ordered Array of Quantum Dots

Ordering InAs islands grown on (001) InP substrate controlled by using tensile strained GaAs layer

Self-Organized Inas Quantum Dots Formation By As/P Exchange Reaction On (001) Inp Substrate

Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(1 0 0) and high index substrates by molecular beam epitaxy

Uniform InAs quantum-dots on vicinal GaAs (100) substrates by pulsed atomic layer epitaxy via metal-organic chemical vapor deposition

Substrate Dependence of Ingaas Quantum Dots Grown by Molecular Beam Epitaxy

InAs/InGaP Quantum Dot Solar Cells with an AlGaAs Interlayer

Low-Density Inas Quantum Dots Growth by Molecular Beam Epitaxy