Abstract:Silicon photonics is now widely accepted as a key technology in a variety of systems. But owing to material limitations, now it is challenging to greatly improve the performance after decades of development. Here, we show a high-performance broadband photodetector with significantly enhanced sensitivity and responsivity operating over a wide wavelength range of light from near-ultraviolet to near-infrared at low power consumption. The specially designed textured top ceiling electrode works effectively as an antireflection layer to greatly improve the absorption of near-infrared light, thereby overcoming the absorption limitation of near-infrared light. Instead of the conventional p-n junction and p-intrinsic-n junction, we introduce a similar to 15 nm thick alumina insulator layer between a p-type Si substrate and n-type ZnO nanowire (NW) arrays, which significantly enhances the charge carrier separation and collection efficiency. The photosensing responsivity and sensitivity are found to be nearly 1 order of magnitude higher than that of a reference device of p-Si/n-ZnO NW arrays, significantly higher than the commercial silicon photodiodes as well. The light-induced charge carriers flow across the appropriate thickness of insulator layer via the quantum mechanical Fowler-Nordheim tunneling mechanism. By virtue of the piezo-phototronic effect, the charge density at the interfaces can be tuned to alter the energy bands and the potential barrier distance for tunneling. Additionally, along with the use of incident light of different wavelengths, the influence of the insulator layer on the transport of electrons and holes separately is further investigated. The demonstrated concepts and study would lead to sensitivity improvement, quality enhancement of data transfer, decrease of power consumption, and cost reduction of silicon photonics.

Laser-Tuned Large Photo Hall Effect in p-Type Silicon Based on Surface States

Lateral Photovoltaic Effect in P-Type Silicon Induced by Surface States

Sensitive Photodetection Based on the Surface States of P-Type Silicon

Laser-induced Damage in a Silicon-Based Photodiode by MHz Picosecond Laser

Laser Tuned Large Position-Dependent Tunneling Detection Dominated by Interface States in Silicon Based Oxide-Semiconductor Structure

High Sensitivity Si-based Photodetection with Nanoscale Protective Layer Based on Interface States.

The Influence of Surface Treatment on the Performance of Photoconductive Detectors Based on Silicon Wafer

Photodetection in silicon beyond the band edge with surface states

A plasmon modulated photothermoelectric photodetector in silicon nanostripes

Epitaxial P-Si/cspbbr3 Heterostructure Photodetector with Enhanced Green Responsivity

Dramatically Enhanced Broadband Photodetection by Dual Inversion Layers and Fowler-Nordheim Tunneling

Localized Surface Plasmon Induced Position-Sensitive Photodetection in Silicon-Nanowire-Modified Ag/Si

Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes

Enhanced Photoelectric and Photothermal Responses on Silicon Platform by Plasmonic Absorber and Omni‐Schottky Junction

Photoconductive Effect on P-I-p Micro-Heaters Integrated in Silicon Microring Resonators.

Surface Plasmon Enhanced Strong Exciton-Photon Coupling in Hybrid Inorganic-Organic Perovskite Nanowires

High-Performance WSe2 Photodetector Based on a Laser-Induced P-N Junction.

Large Lateral Photovoltaic Effect and Spatial Resistance Effect on MoS2/p-Si Interface

Giant persistent photoconductivity in rough silicon nanomembranes.

Dynamics of Charge Carriers in Silicon Nanowire Photoconductors Revealed by Photo Hall Effect Measurements.

Nonvolatile and Tunable Switching of Lateral Photo-Voltage Triggered by Laser and Electric Pulse in Metal Dusted Metal-Oxide-semiconductor Structures