Highly Sensitive Narrowband Si Photodetector With Peak Response at Around 1060 nm
Li Wang,Hehao Luo,Huanhuan Zuo,Jiqing Tao,Yongqiang Yu,Xiaoping Yang,Molin Wang,Jigang Hu,Chao Xie,Di Wu,Linbao Luo
DOI: https://doi.org/10.1109/ted.2020.3001245
IF: 3.1
2020-08-01
IEEE Transactions on Electron Devices
Abstract:Photodetection at a wavelength of about 1060 nm is very important for applications including medical imaging, optical communication, and light detection and ranging. In this article, a self-powered near-infrared light detector with a narrowband at around 1060 nm is realized based on a simple Si Schottky structure, in which the Ohmic and Schottky electrodes are configured on the front and rear surfaces of the Si substrate, respectively. The as-assembled device exhibits a tunable peak response near 1060 nm with a full width at half maximum of 107 nm, which could be due to the combined effect of the narrow photo-current generation and the self-filtering effect of the silicon substrate. At zero bias, a specific detectivity of $sim 1times 10^{11}$ Jones and linear dynamic range about 101 dB are achieved, in spite of the weak absorption of Si at this wavelength. The external quantum efficiency can be improved to 135% under a low bias of −1 V, indicating the existence of gain mechanism during photodetection. Finally, it is also found that the as-assembled near-infrared device shows excellent antiinterference capability during the photodetection process. These results corroborate that the present Si photodetector may find promising application in future near-infrared optoelectronic devices and systems.
engineering, electrical & electronic,physics, applied