Abstract:Although the photoresponse cut-off wavelength of Si is about 1100 nm due to the Si bandgap energy, the internal photoemission effect (IPE) of the Au/Si junction in Schottky detector can extend the absorption wavelength, which makes it a promising candidate for the Si-based infrared detector. However, due to low light absorption, low photon-electron interaction, and poor electron injection efficiency, the near-infrared light detection efficiency of the Schottky detector is still insufficient. The synergistic effect of Si nano/microstructures with a strong light trapping effect and nanoscale Au films with surface plasmon enhanced absorption may provide an effective solution for improving the detection efficiency. In this paper, a large-area periodic Si microcone array covered by an Au film has successfully been fabricated by one-time dry etching based on the mature polystyrene microspheres lithography technique and vacuum thermal deposition, and its properties for hot electron-based near infrared photodetection are investigated. Optical measurements show that the 20 nm-thick Au covered Si microcone array exhibits a low reflectance and a strong absorption (about 85%) in wide wavelength range (900-2500 nm), and the detection responsivity can reach a value as high as 17.1 and 7.0 mA W-1at 1200 and 1310 nm under the front illumination, and 35.9 mA W-1at 1310 nm under the back illumination respectively. Three-dimensional finite difference time domain (3D-FDTD) simulation results show that the enhanced local electric field in the Au layer distributes near the air/Au interface under the front illumination and close to the Au/Si interface under the back illumination. The back illumination favors the injection of photo-generated hot electrons in Au layer into Si, which can explain the higher responsivity under the back illumination. Our research is expected to promote the practical application of Schottky photodetectors to Si-compatible near infrared photodetectors.

Achieving Infrared Detection by All-Si Plasmonic Hot-Electron Detectors with High Detectivity.

All-Si Photodetectors with a Resonant Cavity for Near-Infrared Polarimetric Detection.

Near-Infrared Polarization-Sensitive Detection by All-Si Plasmonic Hot Electron Detectors

Tunable Plasmonic Perfect Absorber for Hot Electron Photodetection in Gold-Coated Silicon Nanopillars

Near-infrared Detection Based on the Excitation of Hot Electrons in Au/Si Microcone Array.

Light Trapping and Surface Plasmon Enhanced High-Performance NIR Photodetector

Surface plasmon enhanced InAs-based mid-wavelength infrared photodetector

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

Hot-Carrier Effect and Nanometer Metal Enabling Si-Based Mid-Infrared Detection Beyond 5μm of Wavelength

Plasmon Resonance-Enhanced Graphene Nanofilm-Based Dual-Band Infrared Silicon Photodetector

Silicon-based planar devices for narrow-band near-infrared photodetection using Tamm plasmons

The Effect of Infrared Plasmon on the Performance of Si-based THz Detectors

Narrowband Photodetection in the Near-Infrared with a Plasmon-Induced Hot Electron Device.

Plasmonic internal-photoemission-based Si photodetector design suitable for optical communication

Nanobowls-assisted broadband absorber for unbiased Si-based infrared photodetection

Design of Subwavelength CMOS Compatible Plasmonic Photodetector for Nano-Electronic-Photonic Integrated Circuits

Highly Sensitive Mid-Infrared Photodetector Enabled by Plasmonic Hot Carriers in the First Atmospheric Window

Near Infrared Efficiency Enhancement of Silicon Photodiodes by Integration of Metal Nanostructures Supporting Surface Plasmon Polaritrons

W 18 O 49 Nanowire Arrays for Plasmonic Photodetector with Electromediated Broadband Photoresponse

Design and Simulation of a High-Responsivity Dielectric Metasurface Si-Based InGaAs Photodetector

Localized Surface Plasmon Resonance Enables Si-Based Near-Infrared Photodetector