Fully Depleted Self‐Aligned Heterosandwiched Van Der Waals Photodetectors
Fang Wang,Zhiyi Liu,Tao Zhang,Mingsheng Long,Xiuxiu Wang,Runzhang Xie,Haonan Ge,Hao Wang,Jie Hou,Yue Gu,Xin Hu,Ze Song,Suofu Wang,Qingsong Dong,Kecai Liao,Yubing Tu,Tao Han,Feng Li,Zongyuan Zhang,Xingyuan Hou,Liang Li,Xueao Zhang,Dongxu Zhao,Chongxin Shan,Lei Shan,Weida Hu,Shaoling Wang
DOI: https://doi.org/10.1002/adma.202203283
IF: 29.4
2022-08-20
Advanced Materials
Abstract:Room‐temperature‐operating highly sensitive mid‐wave infrared (MWIR) photodetectors are utilized in a large number of important applications including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using two‐dimentional narrow‐bandgap semiconductors. To date, most of these works utilize atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p‐n junctions as absorbers, which have difficulty meeting the requirements for state‐of‐the‐art MWIR photodetectors with a blackbody response. Here, we report a fully depleted self‐aligned MoS2‐BP‐MoS2 vdW heterostructure sandwiched between two electrodes. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A/W and low noise‐equivalent power of 2.0 × 10−14 W/Hz1/2, in the MWIR region. A peak specific detectivity of 8.61 × 1010 cmHz1/2/W under blackbody radiation was achieved at room temperature in the MWIR region. Importantly, the effective detection range of our device is twice that of state‐of‐the‐art MWIR photodetectors. Furthermore, the device presents an ultra‐fast response of ∼4 μs both in the visible and short‐wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room‐temperature MWIR photodetectors. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology